丝印代码：R24；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. FEATURES • Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7

NPN Silicon Epitaxial Transistor

Features ● Low noise and high gain. NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz ● High gain. |S21e| 2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

NPN Silicon Plastic Encapsulated Transistor

FEATURE • The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier • Suitable for a high density surface mount assembly since the transistor has been applied small mini mold package

NPN Silicon Epitaxial Planar Transistor

FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier.

NPN Silicon Epitaxial Planar Transistor

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