high-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features • High fT : fT typ=400MHz. • High breakdown voltage : VCEO≥200V. • Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP). • Complementary PNP and NPN types. • Adoption of FBET process.

Ultrahigh-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features · High fT: fTtyp=400MHz. · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.0pF (NPN), 2.5pF (PNP). · Complementary PNP and NPN types. · Adoption o

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gai

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gai

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS FEATURES: ● Low Noise Figure, High Gain ● NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz)

TRANSISTOR

3SK121 datasheet pdf

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF ~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

Silicon NPN Epitaxial Planar Type

Features Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2= 9.5dB (f = 1 GHz)

TRANSISTOR

3SK121 datasheet pdf

Silicon NPN epitaxial planar type(For video amplifier)

Silicon NPN epitaxial planar type For video amplifier ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob • Wide current range • TO-126B package which requires no insulation plate for installation to the heat sink

NPN EPITAXIAL TYPE (VIDEO DRIVER STAGE IN HIGH RESOUTION DISPLAY, HIGH SPEED SWITCHING APPLICATIONS)

VIDEO DRIVE STAGE IN HIGH RESOLUTION DISPLAY. HIGH SPEED SWITCHING APPLICATIONS.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC3615 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving, instead of Darlington Transistor, or muting.

NPN SILICON TRANSISTOR

DESCRIPTION The 2SC3616 is designed for general-purpose applications requiriing High DC Current Gain. This is suitable for all kind of driving, instead of Darlington Transistor, or muting.

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

NPN Silicon Epitaxia

Features ● World standard miniature package. ● High hFE hFE=800 to 1600.

Old Company Name in Catalogs and Other Documents

FEATURES ● High hFE hFE = 800 to 3200

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD FEATURE - Higt DC Current Gain Hfe = 800 to 3200

NPN Silicon Epitaxia

Features ● World standard miniature package.

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SC3618 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES ● World Standard Miniature Package

NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING AND AMPLIFIER, COLOR TV HORIZONTAL DRIVER, COLOR TV CHROMA OUTPUT APPLICATIONS)

High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 300 V • Small collector output capacitance: Cob = 3.0 pF (typ.)

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High voltage • Small collector output capacitance APPLICATIONS •·High voltage switching and amplifier •·Color TV horizontal driver applications •·Color TV chroma output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High voltage • Small collector output capacitance APPLICATIONS •·High voltage switching and amplifier •·Color TV horizontal driver applications •·Color TV chroma output applications

NPN TRIPLE DIFFUSED TYPE (COLOR TV HORIZONTAL DRIVER, CHROMA OUTPUT APPLICATIONS)

Color TV Horizontal Driver Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 300 V • Recommended for chroma output and driver applications for line-operated TV horizontal.

NPN EPITAXIAL TYPE (COLOR TV VERT. DEFLECTION,CLASS B SOUND OUTPUT APPLICATIONS)

Color TV Vertitcal Deflection Output Applications Color TV Class-B Sound Output Applications • Large collector current and collector power dissipation capability • Recommended for vertical deflection output and sound output applications for line-operated TVs. • Complementary to 2SA1408.

NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Amplifier,Switching

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)

NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Amplifier,Switching

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)

2SC3623A

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NPN SILICON TRANSISTOR

FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A)

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A)

2SC3623A

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

Old Company Name in Catalogs and Other Documents

FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

Old Company Name in Catalogs and Other Documents

FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

NPN Silicon Epitaxial Transistor

Features ● High DC current Gain: hFE = 1000 to 3200. ● Low VCE(sat): (VCE(sat) = 0.07 V TYP).

Old Company Name in Catalogs and Other Documents

FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High collector breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • High collector breakdown voltage APPLICATIONS • Switching regulator and high voltage switching applications • High speed DC-DC converter applications

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • High Speed tf

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • High Speed tf

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers • High-speed inverters • Conver

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3631-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO = 400 V • High Speed tf

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • High collector-emitter voltage • Low collector saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High voltage switching.

NPN Silicon Epitaxial Transistor

■ Features ● High voltage ● High speed ● Complementary to 2SA1413-Z

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PN package · High voltage, high speed · High reliability APPLICATIONS · Ultrahigh-definition CRT display horizontal deflection output applications

Very High-Definition Display Horizontal Deflection Output Applications????

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High reliability (Adoption of HVP process). • Fast speed. • High breakdown voltage. • Adoption of MBIT process.