NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

丝印代码：DPAK；isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • High collector-emitter voltage • Low collector saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High voltage switching.

NPN Silicon Epitaxial Transistor

■ Features ● High voltage ● High speed ● Complementary to 2SA1413-Z

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. • High Voltage VCEO = 600 V\n• High Speed tf < 0.5 μs\n• Complement to 2SA1413-Z;

NPN Transistors

文件：1.36833 Mbytes Page：3 Pages

NPN SILICON EPITAXIAL TRANSISTOR

文件：895.35 Kbytes Page：7 Pages

NPN Transistors

文件：1.36833 Mbytes Page：3 Pages

NPN Transistors

文件：1.36833 Mbytes Page：3 Pages

NPN Transistors

文件：1.36833 Mbytes Page：3 Pages

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

isc Silicon NPN Power Transistor

文件：290.54 Kbytes Page：2 Pages