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2SC3624晶体管资料
2SC3624(A)别名:2SC3624(A)三极管、2SC3624(A)晶体管、2SC3624(A)晶体三极管
2SC3624(A)生产厂家:日本日电公司
2SC3624(A)制作材料:Si-NPN
2SC3624(A)性质:表面帖装型 (SMD)
2SC3624(A)封装形式:贴片封装
2SC3624(A)极限工作电压:60V
2SC3624(A)最大电流允许值:0.15A
2SC3624(A)最大工作频率:<1MHZ或未知
2SC3624(A)引脚数:3
2SC3624(A)最大耗散功率:
2SC3624(A)放大倍数:β=1800
2SC3624(A)图片代号:H-15
2SC3624(A)vtest:60
2SC3624(A)htest:999900
- 2SC3624(A)atest:0.15
2SC3624(A)wtest:0
2SC3624(A)代换 2SC3624(A)用什么型号代替:2SC2812,2SC3052,2SC3326,2SC3689,2SD1030,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC3624 | AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | NEC 瑞萨 | ||
2SC3624 | Old Company Name in Catalogs and Other Documents FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | RENESAS 瑞萨 | ||
2SC3624 | Old Company Name in Catalogs and Other Documents FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | RENESAS 瑞萨 | ||
2SC3624 | NPN Silicon Epitaxial Transistor Features ● High DC current Gain: hFE = 1000 to 3200. ● Low VCE(sat): (VCE(sat) = 0.07 V TYP). | KEXIN 科信电子 | ||
2SC3624 | Small Signal Bipolar Transistors | RENESAS 瑞萨 | ||
Old Company Name in Catalogs and Other Documents FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | RENESAS 瑞萨 | |||
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | NEC 瑞萨 | |||
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | NEC 瑞萨 | |||
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A) | NEC 瑞萨 | |||
Small Signal Bipolar Transistors | RENESAS 瑞萨 | |||
Silicon transistor | NEC 瑞萨 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:TRANS NPN 50V 0.15A SC59 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC |
2SC3624产品属性
- 类型
描述
- 型号
2SC3624
- 制造商
Renesas Electronics
- 功能描述
Cut Tape
- 制造商
Renesas Electronics Corporation
- 功能描述
NPN Transistor,50V,0.15A,MINI MOLD
- 制造商
Renesas
- 功能描述
Trans GP BJT NPN 50V 0.15A 3-Pin Mini-Mold T/R
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
05+ |
2870 |
全新原装进口自己库存优势 |
|||||
NEC |
24+ |
SOT-23 |
5000 |
全新原装正品,现货销售 |
|||
NEC |
2223+ |
SOT-23 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
23+ |
SOT-23 |
5600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
||||
NEC |
24+ |
SOT-23 |
13200 |
新进库存/原装 |
|||
RENESAS |
26+ |
SOT23-3 |
360000 |
进口原装现货 |
|||
NEC |
NEW |
SOT23 |
8293 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
25+23+ |
Sot-23 |
31688 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
2023+ |
SOT-23 |
5600 |
原厂全新正品旗舰店优势现货 |
|||
NEC |
25+ |
SOT-23 |
30000 |
代理全新原装现货,价格优势 |
2SC3624芯片相关品牌
2SC3624规格书下载地址
2SC3624参数引脚图相关
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2SC3624数据表相关新闻
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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