SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION\nThe 2SC3632-Z is designed for High Voltage Switching, especially in\nHybrid Integrated Circuits.FEATURES\n•  High Voltage VCEO= 600 V\n•  High Speed tf< 0.5 μs\n•  Complement to 2SA1413-Z •  High Voltage VCEO= 600 V\n•  High Speed tf< 0.5 μs\n•  Complement to 2SA1413-Z;

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3632-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES • High Voltage VCEO= 600 V • High Speed tf

NPN Silicon Epitaxial Transistor

■ Features ● High voltage ● High speed ● Complementary to 2SA1413-Z

isc Silicon NPN Power Transistor

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