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位置：首页 > IC中文资料第651页 > 2SC307

2SC307晶体管资料

  • 2SC307别名：2SC307三极管、2SC307晶体管、2SC307晶体三极管

  • 2SC307生产厂家：日本三菱公司

  • 2SC307制作材料：Si-NPN

  • 2SC307性质：通用型 （Uni）

  • 2SC307封装形式：直插封装

  • 2SC307极限工作电压：80V

  • 2SC307最大电流允许值：0.5A

  • 2SC307最大工作频率：240MHZ

  • 2SC307引脚数：3

  • 2SC307最大耗散功率：0.57W

  • 2SC307放大倍数：

  • 2SC307图片代号：C-40

  • 2SC307vtest：80

  • 2SC307htest：240000000

  • 2SC307atest：0.5

  • 2SC307wtest：0.57

  • 2SC307代换 2SC307用什么型号代替：BC140,BC141,BC300,BC301,BC302,BFX96,BFX97,BSW53,BSW54,2N1990,2N2217,3DK9H,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC3070

High-hFE,Low-FrequencyGeneral-PurposeAmpApplications????

HighhFE,Low-FrequencyGeneral-PurposeAmplifierApplications Features •HighDCcurrentgain(hFE=800to3200). •Largecurrentcapacity(IC=1.2A). •Lowcollector-to-emittersaturationvoltage (VCE(sat)=0.5Vmax). •HighVEBO(VEBO≥15V). Applications •Low-frequency,general-purp

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC3071

High-hFE,Low-FrequencyGeneral-PurposeAmpApplications????

HighhFE,Low-FrequencyGeneral-PurposeAmplifierApplications Features ·HighDCcurrentgain(hFE=500to2000). ·Highbreakdownvoltage(VCEO≥100V). ·Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.5V). ·HighVEBO(VEBO≥15V). Applications ·Low-frequency,general-p

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SC3072

TRANSISTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgain :hFE=140to450(VCE=2V,IC=0.5A) :hFE=70(min)(VCE=2V,IC=4A) •Lowcollectorsaturationvoltage :VCE(sat)=1.0V(max)(IC=4A,IB=0.1A) •Highpowerdi

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3072

SiliconNPNEpitaxial

Features •HighDCcurrentgain. •Lowcollectorsaturationvoltage. •Highpowerdissipation.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3072

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3072

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3072

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3072-251

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3072-252

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=20V(Min) ·DCCurrentGain- :hFE=140(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3073

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3073

SILICONNPNEPITAXIALTYPE(PCTPROCESS)

POWERAMPLIFIERAPPLICATIONS. CARRADIO,CARSTEREOOUTPUTSTAGEAMPLIFIERAPPLICATIONS. FEATURES: •GoodLinearityofhFE •Complementaryto2SA1243

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3073-251

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=30V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3074

SiliconNPNPowerTransistor

DESCRIPTION ·ExcellentlinearityofhFE ·Lowcollector-to-emittersaturationvoltage ·Fastswitchingspeed ·Complementaryto2SA1244 APPLICATIONS ·Relaydrivers,high-speedinverters,convertersand Othergeneralhighcurrentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3074

SiliconNPNPowerTransistor

DESCRIPTION ·ExcellentlinearityofhFE ·Lowcollector-to-emittersaturationvoltage ·Fastswitchingspeed ·Complementaryto2SA1244 APPLICATIONS ·Relaydrivers,high-speedinverters,convertersand Othergeneralhighcurrentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3074

HighCurrentSwitchingApplications

HighCurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max)(IC=3A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SA1244

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3074

iscSiliconNPNPowerTransistor

DESCRIPTION •WithTO-252(DPAK)packaging •ExcellentlinearityofhFE •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •Complementaryto2SA1244 •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Relaydrivers,high-spe

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3074

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3074

SiliconNPNEpitaxial

■Features ●Lowcollectorsaturationvoltage ●Highspeedswitchingtime:tstg=1.0μs(typ.) ●Complementaryto2SA1244

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3074

TRANSISTOR(HIGHCURRENTSWITCHINGAPPLICATIONS)

HighCurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max)(IC=3A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SA1244

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3074-251

SiliconNPNPowerTransistor

DESCRIPTION ·ExcellentlinearityofhFE ·Lowcollector-to-emittersaturationvoltage ·Fastswitchingspeed ·Complementaryto2SA1244 APPLICATIONS ·Relaydrivers,high-speedinverters,convertersand Othergeneralhighcurrentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3074-252

SiliconNPNPowerTransistor

DESCRIPTION ·ExcellentlinearityofhFE ·Lowcollector-to-emittersaturationvoltage ·Fastswitchingspeed ·Complementaryto2SA1244 APPLICATIONS ·Relaydrivers,high-speedinverters,convertersand Othergeneralhighcurrentswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3074Y

HighCurrentSwitchingApplications

HighCurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max)(IC=3A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SA1244

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3074-Y

HighCurrentSwitchingApplications

HighCurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.4V(max)(IC=3A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SA1244

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3075

TRANSISTOR(SWITCHINGREGULATORANDHIGHVOLTAGESWITCHING,HIGHSPEEDDC-DCCONVERTERAPPLICATIONS)

SwitchingRegulatorandHighVoltageSwitchingApplications DC-DCConverterApplications DC-ACConverterApplications •Excellentswitchingtimes:tr=1.0μs(max) tf=1.5μs(max),(IC=0.5A) •Highcollectorbreakdownvoltage:VCE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3075

NPNSiliconEpitaxialTransistor

Features ●ExcellentSwitchingTimes tr=1.0ìs(Max.)tf=1.5ìs(Max.)atIC=0.5A ●HighcolletorBreakdownVoltage:VCEO=400V

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3075

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3075

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3075-251

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=400V(Min) ·DCCurrentGain- :hFE=20(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3076

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3076

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3076

PowerAmplifierApplicationsPowerSwitchingApplications

PowerAmplifierApplications PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Excellentswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SA1241

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3076

SiliconNPNEpitaxial

Features ●LowCollectrorSaturationVoltage:VCE(sat)=0.5V(Max.)(IC=1A) ●ExcellentSwitchingTime:tstg=1.0μs(Typ.)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3076

TRANSISTOR(POWERAMPLIFIER,SWITCINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Excellentswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SA1241

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3076

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3076-251

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3076-252

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SC3076Y

PowerAmplifierApplicationsPowerSwitchingApplications

PowerAmplifierApplications PowerSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Excellentswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SA1241

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3072

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件：161.37 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3072_05

StrobeFlashApplicationsMediumPowerAmplifierApplications

文件：161.37 Kbytes Page：4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3074

HighCurrentSwitchingApplications

文件：189.25 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3074_05

HighCurrentSwitchingApplications

文件：189.25 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3074_15

NPNTransistors

文件：1.47723 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3074-O

NPNTransistors

文件：1.47723 Mbytes Page：3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SC3074-O(Q)

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN 50V 5A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SC3074-Y(Q)

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS NPN 50V 5A PW-MOLD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SC3075

SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHighVoltageSwitching

文件：170.75 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3075_06

SiliconNPNTripleDiffusedType(PCTprocess)SwitchingRegulatorandHighVoltageSwitching

文件：170.75 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3076

PowerAmplifierApplicationsPowerSwitchingApplications

文件：176.83 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SC3076_05

PowerAmplifierApplicationsPowerSwitchingApplications

文件：176.83 Kbytes Page：5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

2SC307产品属性

  • 类型

    描述

  • 型号

    2SC307

  • 制造商

    SANYO

  • 功能描述

    TRANS, NPN, , 25V, 1.2A, TO-226 Bulk

  • 制造商

    SANYO Semiconductor Co Ltd

  • 功能描述

    TRANS NPN 25V 1.2A TO-226

  • 制造商

    Sanyo

  • 功能描述

    0

2SC307供应商更多...

更新时间：2025-7-6 15:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳宇航军工半导体有限公司
2SC3076
TOSHIBA
19+
TO-251
59260
原厂代理渠道,每一颗芯片都可追溯原厂；
询价
深圳市百诺芯科技有限公司
2SC3076
TOSHIBA/东芝
23+
TO-252
24190
原装正品代理渠道价格优势
询价
深圳市中联芯电子有限公司
2SC3076
TOSHIBA/东芝
24+
DPAK
7800
全新原厂原装正品现货,低价出售,实单可谈
询价
深圳市汇莱威科技有限公司
2SC3076-Y
TOSHIBA/东芝
24+
TO-252
503112
免费送样原盒原包现货一手渠道联系
询价
艾睿国际（香港）有限公司
2SC3076
TOSHIBA/东芝
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市创新迹电子有限公司
2SC3076
TOSHIBA/东芝
22+
TO-252
15000
原装现货,假一罚十
询价
深圳市盈慧通电子有限公司
2SC3076
TOSHIBA/东芝
2511
TO-252
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
深圳市科恒伟业电子有限公司
2SC3076-O
TOSHIBA
2017+
to251
28562
只做原装正品假一赔十!
询价
深圳市莱克讯科技有限公司
2SC3076-O
TOSHIBA
1922+
to251
9200
公司原装现货假一罚十特价欢迎来电咨询
询价
深圳市一线半导体有限公司
2SC3076
TOSHIBA
24+
SOT252
30000
询价

2SC307芯片相关品牌

  • ANALOGICTECH
  • ASTRODYNE
  • CT
  • DSK
  • EIC
  • EMCORE
  • EXXELIA
  • MTRONPTI
  • NTE
  • P-TEC
  • WECO
  • Yamaha

2SC307规格书下载地址

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