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2SC307晶体管资料

2SC307别名：2SC307三极管、2SC307晶体管、2SC307晶体三极管
2SC307生产厂家：日本三菱公司
2SC307制作材料：Si-NPN
2SC307性质：通用型（Uni）
2SC307封装形式：直插封装
2SC307极限工作电压：80V
2SC307最大电流允许值：0.5A
2SC307最大工作频率：240MHZ
2SC307引脚数：3
2SC307最大耗散功率：0.57W
2SC307放大倍数：
2SC307图片代号：C-40
2SC307vtest：80
2SC307htest：240000000
2SC307atest：0.5
2SC307wtest：0.57

2SC307代换 2SC307用什么型号代替：BC140,BC141,BC300,BC301,BC302,BFX96,BFX97,BSW53,BSW54,2N1990,2N2217,3DK9H,

型号	功能描述	生产厂家企业	LOGO
2SC3070	High-hFE, Low-Frequency General-Purpose Amp Applications???? High hFE, Low-Frequency General-Purpose Amplifier Applications Features • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=1.2A). • Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). • High VEBO (VEBO≥15V). Applications • Low-frequency, general-purp	SANYO 三洋	SANYO
2SC3071	High-hFE, Low-Frequency General-Purpose Amp Applications???? High hFE, Low-Frequency General-Purpose Amplifier Applications Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO(VEBO≥15V). Applications · Low-frequency, general-p	SANYO 三洋	SANYO
2SC3072	TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) • High power di	TOSHIBA 东芝	TOSHIBA
2SC3072	Silicon NPN Epitaxial Features • High DC current gain. • Low collector saturation voltage. • High power dissipation.	KEXIN 科信电子	KEXIN
2SC3072	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC3072	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3072	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3072	Power transistor for high-speed switching applications Application Scope：Camera flashes / Power amplifier\nPolarity：NPN\nComplementary Product：2SA1242\nComments：Complementary product has different hFE value.\nRoHS Compatible Product(s) (#)：Available Collector Current IC 5 A \nCollector power dissipation PC 10 W \nCollector power dissipation PC 1 W \nCollector-emitter voltage VCEO 20 V ;	TOSHIBA 东芝	TOSHIBA
2SC3072-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3072-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·DC Current Gain- : hFE= 140(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3073	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3073	SILICON NPN EPITAXIAL TYPE(PCT PROCESS) POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES : • Good Linearity of hFE • Complementary to 2SA1243	TOSHIBA 东芝	TOSHIBA
2SC3073-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3074	High Current Switching Applications High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244	TOSHIBA 东芝	TOSHIBA
2SC3074	isc Silicon NPN Power Transistor DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Complementary to 2SA1244 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers, high-spe	ISC 无锡固电	ISC
2SC3074	丝印代码：C3074；Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC3074	Silicon NPN Epitaxial ■ Features ● Low collector saturation voltage ● High speed switching time: tstg = 1.0 μs (typ.) ● Complementary to 2SA1244	KEXIN 科信电子	KEXIN
2SC3074	TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS) High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244	TOSHIBA 东芝	TOSHIBA
2SC3074	Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications	ISC 无锡固电	ISC
2SC3074	Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications	ISC 无锡固电	ISC
2SC3074-251	Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications	ISC 无锡固电	ISC
2SC3074-252	Silicon NPN Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SA1244 APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications	ISC 无锡固电	ISC
2SC3074Y	High Current Switching Applications High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244	TOSHIBA 东芝	TOSHIBA
2SC3074-Y	High Current Switching Applications High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244	TOSHIBA 东芝	TOSHIBA
2SC3075	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC3075	TRANSISTOR (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS) Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr= 1.0 μs (max) tf= 1.5 μs (max), (IC= 0.5 A) • High collector breakdown voltage: VCE	TOSHIBA 东芝	TOSHIBA
2SC3075	NPN Silicon Epitaxial Transistor Features ● Excellent Switching Times tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A ● High colletor Breakdown Voltage: VCEO=400V	KEXIN 科信电子	KEXIN
2SC3075	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3075-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3076	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3076	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3076	Power Amplifier Applications Power Switching Applications Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1241	TOSHIBA 东芝	TOSHIBA
2SC3076	Silicon NPN Epitaxial Features ● Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) ● Excellent Switching Time :tstg=1.0μs(Typ.)	KEXIN 科信电子	KEXIN
2SC3076	TRANSISTOR (POWER AMPLIFIER, SWITCING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1241	TOSHIBA 东芝	TOSHIBA
2SC3076	丝印代码：C3076；Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SC3076-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3076-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC3076Y	Power Amplifier Applications Power Switching Applications Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1241	TOSHIBA 东芝	TOSHIBA
2SC3071	NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications	ONSEMI 安森美半导体	ONSEMI
2SC3072	Strobe Flash Applications Medium Power Amplifier Applications 文件：161.37 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC3072_05	Strobe Flash Applications Medium Power Amplifier Applications 文件：161.37 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SC3073	SILICON NPN EPITAXIAL TYPE(PCT PROCESS)	TOSHIBA 东芝	TOSHIBA
2SC3074	High Current Switching Applications 文件：189.25 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC3074_05	High Current Switching Applications 文件：189.25 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC3074_15	NPN Transistors 文件：1.47723 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3074-O	NPN Transistors 文件：1.47723 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SC3074-O(Q)	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装描述：TRANS NPN 50V 5A PW-MOLD 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SC3074-Y(Q)	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装描述：TRANS NPN 50V 5A PW-MOLD 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SC3075	Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching 文件：170.75 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC3075_06	Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching 文件：170.75 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC3076	Power Amplifier Applications Power Switching Applications 文件：176.83 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SC3076_05	Power Amplifier Applications Power Switching Applications 文件：176.83 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA

2SC307产品属性

类型
描述
Product Category：
Power transistor for high-speed switching applications
Package name(Toshiba)：
PW-Mold
Recommended Product 1：
2SC5886A(Almost same package but similar characteristics)

2SC307供应商更多...

更新时间：2026-5-15 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SC3076	TOSHIBA/东芝	2026+	TO-252	54558	百分百原装现货实单必成欢迎询价	询价
深圳市创新迹电子有限公司	2SC3076-Y(TE16L1N	TOS	22+	TO252	20000	公司只有原装品质保证	询价
深圳市赛美科科技有限公司	2SC3076-Y	TOS		TO-252	8553	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市威雅利发展有限公司	2SC3076-Y	TOSHIBA/东芝	07+	TO-251	193	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市腾亿芯科技有限公司	2SC3076	TOSHIBA/东芝	25+	TO-252	20000	原装	询价
深圳市明嘉莱科技有限公司	2SC3076-Y	TOSHIBA/东芝	25+	IPAK	880000	明嘉莱只做原装正品现货	询价
深圳市科恒伟业电子有限公司	2SC3076-Y(T6L1	TOSHIBA/东芝	2450+	TO252	6540	只做原厂原装正品现货或订货!终端工厂可以申请样品!	询价
深圳市凯睿晟科技有限公司	2SC3076	TOSHIBA/东芝	21+	TO-252	33200	优势供应实单必成可13点增值税	询价
深圳市华斯顿科技有限公司	2SC3076-O/C3076	Sanyo	25+23+	To-252	34163	绝对原装正品全新进口深圳现货	询价
深圳市胜彬电子有限公司	2SC3076-YT	TOSHIBA/东芝	22+	TO-252	8000	原装正品支持实单	询价

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产品属性属性值搜索类似制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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找IC，尽在114IC

2SC307晶体管资料

2SC307产品属性

2SC307供应商更多...

2SC307芯片相关品牌

2SC307规格书下载地址

2SC307参数引脚图相关

2SC307数据表相关新闻

2SC2712G-SOT23.3R-Y-TG

2SC3356

2SC380TM-O

2SC3671-B,T2F(J

2SC2334中文资料

2SC2859中文资料

DdatasheetPDF页码索引