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2SC3076晶体管资料
2SC3076别名：2SC3076三极管、2SC3076晶体管、2SC3076晶体三极管
2SC3076生产厂家：日本东芝公司
2SC3076制作材料：Si-NPN
2SC3076性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SC3076封装形式：直插封装
2SC3076极限工作电压：50V
2SC3076最大电流允许值：2A
2SC3076最大工作频率：80MHZ
2SC3076引脚数：3
2SC3076最大耗散功率：10W
2SC3076放大倍数：
2SC3076图片代号：A-80
2SC3076vtest：50
2SC3076htest：80000000
- 2SC3076atest：2
2SC3076wtest：10
2SC3076代换 2SC3076用什么型号代替：2SD1078,2SD1221,2SD1448,2SD1758,2SD1801,2SD1802,2SD2178,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SC3076 | TRANSISTOR (POWER AMPLIFIER, SWITCING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1241 | TOSHIBA 东芝 |   | |
2SC3076 | Silicon NPN Epitaxial Features ● Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) ● Excellent Switching Time :tstg=1.0μs(Typ.) | KEXIN 科信电子 | | |
2SC3076 | Power Amplifier Applications Power Switching Applications Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1241 | TOSHIBA 东芝 | | |
2SC3076 | Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | |
2SC3076 | Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | |
2SC3076 | Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | |
2SC3076 | Power transistor for high-speed switching applications | TOSHIBA 东芝 | | |
2SC3076 | Power Amplifier Applications Power Switching Applications 文件：176.83 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.5A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Power Amplifier Applications Power Switching Applications Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1241 | TOSHIBA 东芝 | | ||
Power Amplifier Applications Power Switching Applications 文件：176.83 Kbytes Page：5 Pages | TOSHIBA 东芝 | |
2SC3076产品属性
- 类型
描述
- 型号
2SC3076
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TOSHIBA TRANS. SC-6450V 2A 1W BCE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
TOSHIBA/东芝 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA/东芝 |
24+ |
NA/ |
5400 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA/东芝 |
25+ |
TO-252 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA |
24+/25+ |
368 |
原装正品现货库存价优 |
||||
TOS |
TO-252 |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
TOSHIBA/东芝 |
25+ |
IPAK |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
TOSHIBA/东芝 |
21+ |
TO-252 |
33200 |
优势供应 实单必成 可13点增值税 |
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2SC3076规格书下载地址
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2SC3076数据表相关新闻
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产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
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