High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Complementary to 2SA1244 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers, high-spe

TRANSISTOR (HIGH CURRENT SWITCHING APPLICATIONS)

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244

Silicon NPN Epitaxial

■ Features ● Low collector saturation voltage ● High speed switching time: tstg = 1.0 μs (typ.) ● Complementary to 2SA1244

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244

High Current Switching Applications

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