丝印代码：CP；Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation: PCM=200mW APPLICATIONS • NPN Silicon Epitaxial Planar Transistor

NPN Transistor Plastic-Encapsulate Transi stors

FEATURES 1. Power Dissipation PCM : 200 mW ( Tamb= 25 C) 2. RoHS Compliant Product

TRANSISOR(NPN)

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

SOT-23 Plastic-Encapsulate Transistors

FEATURES High ICMax.ICMax. = 500mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036

丝印代码：CP/CQ/CR；Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation: PCM=200Mw. ● High ICM(MAX.),I CM(MAX.)=0.5mA. ● Low VCE(sat)。 ● Complements the 2SA1036. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ● High ICMax.ICMax. = 0.5mA ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1036

Plastic-Encapsulate Transistors

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Large IC,low VCE(sat),complementary pair with the 2SA1036K. Applications Medium power amplifier applications.

丝印代码：CQ；Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 32 Volts POWER 225mW FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • In compliance with EU RoHS 2002/95/EC directives

Medium Power Transistor

■ Features • High ICMax. ICMax. = 0.5A • Low VCE(sat). Optimal for low voltage operation. • NPN silicon transistor

丝印代码：CQ；Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power NPN Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor

NPN silicon FEATURE ● Epitaxial planar type ● Complementary to 2SA1036K ● We declare that the material of product compliance with RoHS requirements.

NPN Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High IC. ICMax.= 0.5 A • Low VCE(sat).Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High IC. ICMax.= 0.5 A • Low VCE(sat).Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High IC. ICMax.= 0.5 A • Low VCE(sat).Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

Silicon Epitaxial Planar Transistor

Silicon Epitaxial Planar Transistor FEATURES ● Low Cob,Cob=2.0pF. ● Complementary to 2SA1037 APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor

NPN Silicon General Purpose Transistor

0.15A , 60V NPN Epitaxial Planar Transistor FEATURE ● Low Cob, Cob=2.0pF ● Complements of the 2SA1037

2SC4097 / 2SC1741S

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES · Low Cob,Cob= 2.0 pF (Typ). MARKING : BQ, BR, BS

丝印代码：BQ；NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

NPN EPITAXIAL SILICON TRANSISTOR

PRF-AMPLIFIER,LOW LEVEL&LOW NOISE ● Complemen to 2SA1037 ● Collector-current:Ic=100mA ● Collector-Emiller Voltage:VCE=45V ● High Totalpower Dissipation Pc=225mW ● High life And Good Linearity

Plastic-Encapsulate Transistors

FEATURES • Low Cob ,Cob = 2.0 pF (Typ).

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Low Cob ,Cob = 2.0 pF (Typ).

SOT-23 Plastic-Encapsulate Transistors

FEATURES • Low Cob ,Cob = 2.0 pF (Typ).

NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

丝印代码：BQ/BR/BS；Silicon Epitaxial Planar Transistor

FEATURES ● Low Cob.Cob=2.0pF ● Complementary to 2SA1037 APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor

NPN Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Poewr Dissipation of 200mW • High Stability and High Reliability • Low Cob,Cob=2.0pF(Typ)

丝印代码：BQ；NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

丝印代码：BR；NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

丝印代码：BS；NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

General purpose transistor (50V, 0.15A)

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

General purpose transistor (50V, 0.15A)

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

General purpose transistor (50V, 0.15A)

2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Datasheet

General purpose transistor (50V, 0.15A)

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

General purpose transistor (50V, 0.15A)

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

SOT- 23 TRANSISTOR

FEATURES • Low Cob ,Cob = 2.0 pF (Typ).

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low Cob. Applications General amplifier.

NPN EPITAXIAL SILICON TRANSISTOR

GENERAL PURPOSE TRANSISTOR * Feature: (1) Low Cob. Cob=2.0pF (2) Complements the 2SA1037AK/2SA1576/2SA1774/2SA1774H/2SA2029/2SA933AS.

General purpose small signal amplifier

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

NPN General Purpose Transistors

NPN General Purpose Transistors

丝印代码：BQ；2SC4097 / 2SC1741S

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

NPN Silicon General Purpose Transistor

FEATURES ● Low Cob. ● Cob=2.0pF ● Compements the 2SA1037K ● RoHS Compliant Product

General Purpose Transistor

Features ● Low Cob.Cob=2.0pF (Typ.)

General purpose small signal amplifier (50V,150mA)

lFeatures 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 　 2SA1774EB/2SA1774E3/2SA1576UB/ 　 2SA1576A/2SA1037AK. lApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER

General purpose small signal amplifier(50V, 150mA)

Features 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA1037AK FRA. Application GENERAL PURPOSE SMALL SIGNAL AMPLIFIER

General Purpose Transistor

SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=2.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION

General Purpose Transistors

General Purpose Transistors NPN Silicon • Pb−Free Package is Available.

丝印代码：BQ；NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)