Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor

■ Features • High ICMax. ICMax. = 0.5A • Low VCE(sat). Optimal for low voltage operation. • NPN silicon transistor

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 32 Volts POWER 225mW FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • In compliance with EU RoHS 2002/95/EC directives

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Large IC,low VCE(sat),complementary pair with the 2SA1036K. Applications Medium power amplifier applications.

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

通用型双极晶体管

Driver Transistor

Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation: PCM=200Mw. ● High ICM(MAX.),I CM(MAX.)=0.5mA. ● Low VCE(sat)。 ● Complements the 2SA1036. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

SOT-23 Plastic-Encapsulate Transistors

FEATURES High ICMax.ICMax. = 500mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036

TRANSISOR(NPN)

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

NPN Transistor Plastic-Encapsulate Transi stors

FEATURES 1. Power Dissipation PCM : 200 mW ( Tamb= 25 C) 2. RoHS Compliant Product

Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation: PCM=200mW APPLICATIONS • NPN Silicon Epitaxial Planar Transistor

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power NPN Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor

NPN silicon FEATURE ● Epitaxial planar type ● Complementary to 2SA1036K ● We declare that the material of product compliance with RoHS requirements.

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

文件：328.54 Kbytes Page：6 Pages

TRANSISTOR (NPN)

文件：129.6 Kbytes Page：1 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 32V 0.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Driver Transistor (支持 AEC-Q101)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 32V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个