Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power Transistor NPN silicon

Medium Power NPN Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power

丝印代码：CP；Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation: PCM=200mW APPLICATIONS • NPN Silicon Epitaxial Planar Transistor

NPN Transistor Plastic-Encapsulate Transi stors

FEATURES 1. Power Dissipation PCM : 200 mW ( Tamb= 25 C) 2. RoHS Compliant Product

丝印代码：CQ；Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor

■ Features • High ICMax. ICMax. = 0.5A • Low VCE(sat). Optimal for low voltage operation. • NPN silicon transistor