Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power Transistor NPN silicon

Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation: PCM=200mW APPLICATIONS • NPN Silicon Epitaxial Planar Transistor

NPN Transistor Plastic-Encapsulate Transi stors

FEATURES 1. Power Dissipation PCM : 200 mW ( Tamb= 25 C) 2. RoHS Compliant Product

TRANSISOR(NPN)

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

SOT-23 Plastic-Encapsulate Transistors

FEATURES High ICMax.ICMax. = 500mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036

Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation: PCM=200Mw. ● High ICM(MAX.),I CM(MAX.)=0.5mA. ● Low VCE(sat)。 ● Complements the 2SA1036. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

Medium Power NPN Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power