NPN Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High IC. ICMax.= 0.5 A • Low VCE(sat).Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN Silicon Epitaxial Transistors

文件：306.77 Kbytes Page：3 Pages

NPN Transistors

文件：369.93 Kbytes Page：1 Pages

小信号双极型晶体管

NPN Silicon Epitaxial Transistors

文件：306.77 Kbytes Page：3 Pages

NPN Transistors

文件：382.94 Kbytes Page：1 Pages

NPN Transistor Plastic-Encapsulate Transi stors

FEATURES 1. Power Dissipation PCM : 200 mW ( Tamb= 25 C) 2. RoHS Compliant Product

丝印代码：CP；Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation: PCM=200mW APPLICATIONS • NPN Silicon Epitaxial Planar Transistor

丝印代码：CQ；Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor

■ Features • High ICMax. ICMax. = 0.5A • Low VCE(sat). Optimal for low voltage operation. • NPN silicon transistor

Medium Power NPN Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power