NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

通用型双极晶体管

Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation: PCM=200mW APPLICATIONS • NPN Silicon Epitaxial Planar Transistor

NPN Transistor Plastic-Encapsulate Transi stors

FEATURES 1. Power Dissipation PCM : 200 mW ( Tamb= 25 C) 2. RoHS Compliant Product

TRANSISOR(NPN)

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

SOT-23 Plastic-Encapsulate Transistors

FEATURES High ICMax.ICMax. = 500mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036

Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation: PCM=200Mw. ● High ICM(MAX.),I CM(MAX.)=0.5mA. ● Low VCE(sat)。 ● Complements the 2SA1036. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 32V 0.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个