Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planer type For high-frequency amplification ■ Features ● Optimum for RF amplification of FM/AM radios. ● High transition frequency fT. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine pac

Silicon PNP Epitaxial Planar Type

Features ● Optimum for RF amplification of FM/AM radios ● High transition frequency fT ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High fT. Applications Suitable for RF amplifier in FM/AM radios.

Silicon PNP Epitaxial Planar Type

Features ● Low noise voltage NV. ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 ■ Features • Low noise voltage NV • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pac

Silicon NPN epitaxial planer type

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 ■ Features • Low noise voltage NV • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pac

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Silicon NPN epitaxial planer type

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Silicon PNP Epitaxial Planar Type

Features Low noise voltage NV. High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

Si NPN Triple Diffused Mesa

AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching

NPN SILICON TRANSISTOR

isc Silicon NPN RF Transistor

DESCRIPTION ·Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz ·High Gain ︱S21e︱2 = 21 dB TYP. ;@ f = 200 MHz APPLICATIONS ·Designed for use in high frequency wide band amplifier.

TRANSISOR(NPN)

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ● High ICMax.ICMax. = 0.5mA ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1036

NPN Transistor Plastic-Encapsulate Transi stors

FEATURES 1. Power Dissipation PCM : 200 mW ( Tamb= 25 C) 2. RoHS Compliant Product

SOT-23 Plastic-Encapsulate Transistors

FEATURES High ICMax.ICMax. = 500mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036

Silicon Epitaxial Planar Transistor

FEATURES ● Power dissipation: PCM=200Mw. ● High ICM(MAX.),I CM(MAX.)=0.5mA. ● Low VCE(sat)。 ● Complements the 2SA1036. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

Silicon Epitaxial Planar Transistor

FEATURES • Power dissipation: PCM=200mW APPLICATIONS • NPN Silicon Epitaxial Planar Transistor

Plastic-Encapsulate Transistors

FEATURES • High ICMax.ICMax. = 0.5mA • Low VCE(sat).Optimal for low voltage operation. • Complements the 2SA1036

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Large IC,low VCE(sat),complementary pair with the 2SA1036K. Applications Medium power amplifier applications.

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE 32 Volts POWER 225mW FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • In compliance with EU RoHS 2002/95/EC directives

Medium Power Transistor

■ Features • High ICMax. ICMax. = 0.5A • Low VCE(sat). Optimal for low voltage operation. • NPN silicon transistor

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

FEATURES • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Acquire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) • Green molding compound as per

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power NPN Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Medium Power

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power Transistor NPN silicon

Medium Power Transistor NPN silicon FEATURE ● Epitaxial planar type ● Complementary to L2SA1036K ● Pb-Free package is available

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor (32V, 0.5A)

Features 1) High ICMax. ICMax. = 0.5A 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K. Structure Epitaxial planar type NPN silicon transistor

Medium Power Transistor

NPN silicon FEATURE ● Epitaxial planar type ● Complementary to 2SA1036K ● We declare that the material of product compliance with RoHS requirements.

NPN Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High IC. ICMax.= 0.5 A • Low VCE(sat).Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High IC. ICMax.= 0.5 A • Low VCE(sat).Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

NPN Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High IC. ICMax.= 0.5 A • Low VCE(sat).Optimal for low voltage operation. • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

2SC4097 / 2SC1741S

● Features 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029.

Silicon Epitaxial Planar Transistor

Silicon Epitaxial Planar Transistor FEATURES ● Low Cob,Cob=2.0pF. ● Complementary to 2SA1037 APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor

Silicon Epitaxial Planar Transistor

FEATURES ● Low Cob.Cob=2.0pF ● Complementary to 2SA1037 APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor

NPN EPITAXIAL SILICON TRANSISTOR

PRF-AMPLIFIER,LOW LEVEL&LOW NOISE ● Complemen to 2SA1037 ● Collector-current:Ic=100mA ● Collector-Emiller Voltage:VCE=45V ● High Totalpower Dissipation Pc=225mW ● High life And Good Linearity

NPN Silicon General Purpose Transistor

0.15A , 60V NPN Epitaxial Planar Transistor FEATURE ● Low Cob, Cob=2.0pF ● Complements of the 2SA1037

NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Low Cob ,Cob = 2.0 pF (Typ).

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES · Low Cob,Cob= 2.0 pF (Typ). MARKING : BQ, BR, BS

NPN Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Poewr Dissipation of 200mW • High Stability and High Reliability • Low Cob,Cob=2.0pF(Typ)

NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

SOT-23 Plastic-Encapsulate Transistors

FEATURES • Low Cob ,Cob = 2.0 pF (Typ).

Plastic-Encapsulate Transistors

FEATURES • Low Cob ,Cob = 2.0 pF (Typ).

NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)

NPN Transistors

Features ● Low Cob.Cob=2.0pF (Typ.)