SI PNP EPITAXIAL PLANAR

Silicon PNP epitaxial planar type For audio system/pli drive Complementary to 2SC1953 ■Features •A complementary pair with 2SC1953, is optimum for the pre driver stage of a 60 W to 100 W output amplifier •TO-126B package which requires no insulation plate for installation to the he

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification

VHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES : Output Power: Po-2.8W (Min.) (f=175MHz, VCC-13.5V, P₁-0.15W) 100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR Vcc-13.5V, Po-4W, f-175MHz

丝印代码：C1959；TO-92 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearlity

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Excellent hFE linearlity

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Excellent hFE linearity1Watt output amplifier applications, complementary pair with 2SA562TM. Applications Audio frequency power amplifier, driver stage amplifier and switching applications.

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Excellent hFE Linearity ● High Transition Frequency

Audio frequency power amplifier

Purpose: Audio frequency power amplifier, driver stage amplifier and switching applications. Features: Excellent hFE linearity 1 Watt output amplifier applications, complementary pair with 2SA562TM(3CG562TM).

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency low-power amplifier applications.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ: 150℃

NPN Plastic Encapsulated Transistor

FEATURES ● Excellent hFE Linearity ● High Transition Frequency

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2SC1959 is designed for audio frequency Low power amplifier applications. Features • Excellent hFE Linearity.

TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications * Excellent hFE linearity : hFE (2)= 25 (min): VCE= 6 V, IC= 400 mA * 1 watt amplifier applications. * Complementary to 2SA562TM.

Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Excellent hFE Linearity, complementary pair with 2SA562M. Applications Audio frequency low power amplifier,driver stage amplifier and switching applications.

Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

丝印代码：C1959；TO-92 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearlity

Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

Silicon NPN Power Transistors

文件：119.9 Kbytes Page：4 Pages

双极型晶体管

小信号晶体管

晶体管

Silicon PNP Epitaxial Type (PCT process)

文件：319.24 Kbytes Page：3 Pages

Silicon PNP Epitaxial Type (PCT process)

文件：319.24 Kbytes Page：3 Pages

NPN Plastic Encapsulated Transistor

文件：613.49 Kbytes Page：2 Pages

Power Silicon NPN Transistor

文件：363.22 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power Silicon NPN Transistor

文件：363.22 Kbytes Page：3 Pages

Power Silicon NPN Transistor

文件：363.22 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power Silicon NPN Transistor

文件：363.22 Kbytes Page：3 Pages