Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

Power Silicon NPN Transistor

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NPN Plastic Encapsulated Transistor

FEATURES ● Excellent hFE Linearity ● High Transition Frequency

TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications * Excellent hFE linearity : hFE (2)= 25 (min): VCE= 6 V, IC= 400 mA * 1 watt amplifier applications. * Complementary to 2SA562TM.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ: 150℃

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency low-power amplifier applications.

Silicon PNP Epitaxial Type (PCT process)

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个