丝印代码：C1959；TO-92 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearlity

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ: 150℃

TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications * Excellent hFE linearity : hFE (2)= 25 (min): VCE= 6 V, IC= 400 mA * 1 watt amplifier applications. * Complementary to 2SA562TM.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency low-power amplifier applications.

Silicon PNP Epitaxial Type (PCT process)

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NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin c