Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Excellent hFE Linearity, complementary pair with 2SA562M. Applications Audio frequency low power amplifier,driver stage amplifier and switching applications.

TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications * Excellent hFE linearity : hFE (2)= 25 (min): VCE= 6 V, IC= 400 mA * 1 watt amplifier applications. * Complementary to 2SA562TM.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ: 150℃

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency low-power amplifier applications.

NPN Plastic Encapsulated Transistor

FEATURES ● Excellent hFE Linearity ● High Transition Frequency

Silicon PNP Epitaxial Type (PCT process)

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