TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications * Excellent hFE linearity : hFE (2)= 25 (min): VCE= 6 V, IC= 400 mA * 1 watt amplifier applications. * Complementary to 2SA562TM.

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ: 150℃

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency low-power amplifier applications.

NPN Plastic Encapsulated Transistor

FEATURES ● Excellent hFE Linearity ● High Transition Frequency

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2SC1959 is designed for audio frequency Low power amplifier applications. Features • Excellent hFE Linearity.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Excellent hFE linearlity

Silicon NPN transistor in a TO-92 Plastic Package

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features Excellent hFE linearity1Watt output amplifier applications, complementary pair with 2SA562TM. Applications Audio frequency power amplifier, driver stage amplifier and switching applications.

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Excellent hFE Linearity ● High Transition Frequency

Audio frequency power amplifier

Purpose: Audio frequency power amplifier, driver stage amplifier and switching applications. Features: Excellent hFE linearity 1 Watt output amplifier applications, complementary pair with 2SA562TM(3CG562TM).

丝印代码：C1959；TO-92 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearlity

Small Signal Transistor

双极型晶体管

小信号晶体管

Silicon PNP Epitaxial Type (PCT process)

文件：319.24 Kbytes Page：3 Pages

Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Excellent hFE Linearity, complementary pair with 2SA562M. Applications Audio frequency low power amplifier,driver stage amplifier and switching applications.

Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

丝印代码：C1959；TO-92 Plastic-Encapsulate Transistors

FEATURES Excellent hFE Linearlity

Power Silicon NPN Transistor

Features • Audio frequency low power amplifier applications, driver stage amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA • 1 Watt Amplifier applications • Complementary to 2SA562TM. • Epoxy meets UL 94 V-0 flammability ratin

Silicon PNP Epitaxial Type (PCT process)

文件：319.24 Kbytes Page：3 Pages

NPN Plastic Encapsulated Transistor

文件：613.49 Kbytes Page：2 Pages

Power Silicon NPN Transistor

文件：363.22 Kbytes Page：3 Pages

Power Silicon NPN Transistor

文件：363.22 Kbytes Page：3 Pages

Power Silicon NPN Transistor

文件：363.22 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power Silicon NPN Transistor

文件：363.22 Kbytes Page：3 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin c