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2SC16晶体管资料
2SC16(A)别名:2SC16(A)三极管、2SC16(A)晶体管、2SC16(A)晶体三极管
2SC16(A)生产厂家:日本东芝公司
2SC16(A)制作材料:Si-NPN
2SC16(A)性质:通用型 (Uni)
2SC16(A)封装形式:直插封装
2SC16(A)极限工作电压:25V
2SC16(A)最大电流允许值:0.03A
2SC16(A)最大工作频率:>100MHZ
2SC16(A)引脚数:3
2SC16(A)最大耗散功率:0.25W
2SC16(A)放大倍数:
2SC16(A)图片代号:C-62
2SC16(A)vtest:25
2SC16(A)htest:100000100
- 2SC16(A)atest:0.03
2SC16(A)wtest:0.25
2SC16(A)代换 2SC16(A)用什么型号代替:BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capability • Fast switching speed APPLICATIONS • Motor control • Linear and switching applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capability • Fast switching speed APPLICATIONS • Motor control • Linear and switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capability • Fast switching speed APPLICATIONS • For high speed power switching applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capability • Fast switching speed APPLICATIONS • For high speed power switching applications | ISC 无锡固电 | |||
High Voltage Amp. Triple Diffused Planar NPN Silicon Transistors FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available. | ROHM 罗姆 | |||
SILICON NP TRIPLE DIFFUSED TYPE
| TOSHIBA 东芝 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage: VCBO(min):300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage: VCBO(min):300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capacity • Wide safe oprating area APPLICATIONS • For audio frequency output applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High current capacity • Wide safe oprating area APPLICATIONS • For audio frequency output applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications | ISC 无锡固电 | |||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications | SAVANTIC | |||
NPN Silicon Epitaxial Transistor NPN Silicon Epitaxial Transistor Features ● High speed : tstg=20ns MAX. | KEXIN 科信电子 | |||
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD? HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURE ● High Speed : tstg = 20 ns MAX. | NEC 瑞萨 | |||
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ● High DC Current Gain: hFE = 600 TYP. (VCE = 6.0 V, IC = 1.0 mA) | NEC 瑞萨 | |||
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ● High DC Current Gain: hFE = 600 TYP. (VCE = 6.0 V, IC = 1.0 mA) | NEC 瑞萨 | |||
NPN Silicon Epitaxial Transistor NPN Silicon Epitaxial Transistor Features ● High DC current gain. | KEXIN 科信电子 | |||
Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | |||
Silicon Epitaxial Planar Transistor FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier. | BILIN 银河微电 | |||
NPN Epitaxial Planar Transistor DESCRIPTION The 2SC1623 is designed for use driver stage ofAF amplifier and general purpose application. | SECOS 喜可士 | |||
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. | DCCOM 道全 | |||
NPN Silicon Transistor Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | KEXIN 科信电子 | |||
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V | NEC 瑞萨 | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
NPN General Purpose Transistors Lead(Pb)-Free | WEITRON | |||
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812. Applications Audio frequency general amplifier application. | FOSHAN 蓝箭电子 | |||
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD DESCRIPTION The UTC 2SC1623is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623is usually used in audio frequency general purpose amplifier. FEATURES * High breakdown Voltage * High DC Current Gai | UTC 友顺 | |||
Silicon Epitaxial Planar Transistor FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ● High Voltage:VCEO=50V. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor. ● Audio frequency general purpose amplifier. | LUGUANG 鲁光电子 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V | JIANGSU 长电科技 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NPN ) Features ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V | HDSEMI 海德半导体 | |||
Plastic-Encapsulate Transistors FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V | HOTTECH 合科泰 | |||
High DC current gain hFE 200(Typ)VCE 6V, IC 1mA FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V | MAKOSEMI 美科半导体 | |||
TRANSISTOR (NPN) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
Silicon Epitaxial Planar Transistor FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
Silicon Epitaxial Planar Transistor FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier. | LEIDITECH 雷卯电子 | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
SOT-323 Plastic-Encapsulate Transistors FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V | DGNJDZ 南晶电子 | |||
SOT-23 Plastic-Encapsulate Transistors FEATURES * High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA * High voltage:VCEO=50V | UMW 友台半导体 | |||
NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V SILICON TRANSISTOR | RENESAS 瑞萨 | |||
NPN Epitaxial Planar Transistor DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application. | SECOS 喜可士 | |||
General Purpose Transistors Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion. | COMCHIP 典琦 | |||
NPN Epitaxial Planar Transistor FEATURE • High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. • High Voltage : VCEO=50V. | SECOS 喜可士 | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
General Purpose Transistors Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion. | COMCHIP 典琦 | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
General Purpose Transistors Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion. | COMCHIP 典琦 | |||
NPN Silicon Epitaxial Transistors Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information) | MCC | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
NPN Transistors Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V | YFWDIODE 佑风微 | |||
NPN Silicon Epitaxial Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin | MCC | |||
General Purpose Transistors Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion. | COMCHIP 典琦 | |||
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD DESCRIPTION The UTC 2SC1623is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623is usually used in audio frequency general purpose amplifier. FEATURES * High breakdown Voltage * High DC Current Gai | UTC 友顺 | |||
General Purpose Transistors General Purpose Transistors Pb-Free packkage is available | YEASHIN 亚昕科技 |
2SC16产品属性
- 类型
描述
- 型号
2SC16
- 功能描述
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 250MA I(C) | STX-M3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SK/森浦科/NAXIM |
24+ |
NA/ |
15250 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS/瑞萨 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
RENESAS/瑞萨 |
25+ |
SOT-23 |
20300 |
RENESAS/瑞萨原装特价2SC1653即刻询购立享优惠#长期有货 |
|||
NEC |
24+ |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
23+ |
NA |
6635 |
专做原装正品,假一罚百! |
|||
SK/森浦科/NAXIM |
24+ |
SOT-23 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
NEC |
24+ |
SOT-23 |
9900 |
新进库存/原装 |
|||
NEC |
2450+ |
SOT23-3 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
NEC |
2023+ |
SOT-23 |
50000 |
原装现货 |
2SC16芯片相关品牌
2SC16规格书下载地址
2SC16参数引脚图相关
- 5000
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- 485接口
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- 3g汽车
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- 2sc4226
- 2SC1641
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- 2SC1625
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- 2SC1619
- 2SC1618
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- 2SC1605(A)
- 2SC1604
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- 2SC1601
- 2SC1600
- 2SC160
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- 2SC1599
- 2SC1598
- 2SC1597
- 2SC1596
- 2SC1595
- 2SC1594
- 2SC1593
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- 2SC1590
- 2SC159
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- 2SC1588
- 2SC1587
- 2SC1586
- 2SC1585
- 2SC1584
- 2SC1583
- 2SC1582
- 2SC1581
- 2SC1580
- 2SC1579
- 2SC1577
- 2SC1576
- 2SC1573
- 2SC1571
- 2SC1570
- 2SC1569
- 2SC1568
- 2SC1567
- 2SC1547
- 2SC1545
- 2SC1521
- 2SC1520
- 2SC1518
2SC16数据表相关新闻
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2019-2-18
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