2SC16晶体管资料

  • 2SC16(A)别名:2SC16(A)三极管、2SC16(A)晶体管、2SC16(A)晶体三极管

  • 2SC16(A)生产厂家:日本东芝公司

  • 2SC16(A)制作材料:Si-NPN

  • 2SC16(A)性质:通用型 (Uni)

  • 2SC16(A)封装形式:直插封装

  • 2SC16(A)极限工作电压:25V

  • 2SC16(A)最大电流允许值:0.03A

  • 2SC16(A)最大工作频率:>100MHZ

  • 2SC16(A)引脚数:3

  • 2SC16(A)最大耗散功率:0.25W

  • 2SC16(A)放大倍数

  • 2SC16(A)图片代号:C-62

  • 2SC16(A)vtest:25

  • 2SC16(A)htest:100000100

  • 2SC16(A)atest:0.03

  • 2SC16(A)wtest:0.25

  • 2SC16(A)代换 2SC16(A)用什么型号代替:BC108,BC168,BC172,BC183,BC208,BC238,BC383,BC548,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability • Fast switching speed APPLICATIONS • Motor control • Linear and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability • Fast switching speed APPLICATIONS • Motor control • Linear and switching applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability • Fast switching speed APPLICATIONS • For high speed power switching applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability • Fast switching speed APPLICATIONS • For high speed power switching applications

ISC

无锡固电

High Voltage Amp. Triple Diffused Planar NPN Silicon Transistors

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

ROHM

罗姆

SILICON NP TRIPLE DIFFUSED TYPE

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage: VCBO(min):300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage: VCBO(min):300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capacity • Wide safe oprating area APPLICATIONS • For audio frequency output applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capacity • Wide safe oprating area APPLICATIONS • For audio frequency output applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications

SAVANTIC

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor Features ● High speed : tstg=20ns MAX.

KEXIN

科信电子

HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD?

HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURE ● High Speed : tstg = 20 ns MAX.

NEC

瑞萨

AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ● High DC Current Gain: hFE = 600 TYP. (VCE = 6.0 V, IC = 1.0 mA)

NEC

瑞萨

AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES ● High DC Current Gain: hFE = 600 TYP. (VCE = 6.0 V, IC = 1.0 mA)

NEC

瑞萨

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor Features ● High DC current gain.

KEXIN

科信电子

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

BILIN

银河微电

NPN Epitaxial Planar Transistor

DESCRIPTION The 2SC1623 is designed for use driver stage ofAF amplifier and general purpose application.

SECOS

喜可士

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency amplifier applications.

DCCOM

道全

NPN Silicon Transistor

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

KEXIN

科信电子

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V

NEC

瑞萨

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

NPN General Purpose Transistors

Lead(Pb)-Free

WEITRON

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812. Applications Audio frequency general amplifier application.

FOSHAN

蓝箭电子

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD

DESCRIPTION The UTC 2SC1623is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623is usually used in audio frequency general purpose amplifier. FEATURES * High breakdown Voltage * High DC Current Gai

UTC

友顺

Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ● High Voltage:VCEO=50V. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor. ● Audio frequency general purpose amplifier.

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V

JIANGSU

长电科技

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V

HDSEMI

海德半导体

Plastic-Encapsulate Transistors

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

HOTTECH

合科泰

High DC current gain hFE 200(Typ)VCE 6V, IC 1mA

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

MAKOSEMI

美科半导体

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

LEIDITECH

雷卯电子

NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

DGNJDZ

南晶电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES * High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA * High voltage:VCEO=50V

UMW

友台半导体

NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V SILICON TRANSISTOR

RENESAS

瑞萨

NPN Epitaxial Planar Transistor

DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application.

SECOS

喜可士

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

COMCHIP

典琦

NPN Epitaxial Planar Transistor

FEATURE • High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. • High Voltage : VCEO=50V.

SECOS

喜可士

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

COMCHIP

典琦

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

COMCHIP

典琦

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

MCC

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

YFWDIODE

佑风微

NPN Silicon Epitaxial Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA) • High voltage: VCEO=50V • Epoxy meets UL 94 V-0 flammability ratin

MCC

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

COMCHIP

典琦

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD

DESCRIPTION The UTC 2SC1623is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623is usually used in audio frequency general purpose amplifier. FEATURES * High breakdown Voltage * High DC Current Gai

UTC

友顺

General Purpose Transistors

General Purpose Transistors Pb-Free packkage is available

YEASHIN

亚昕科技

2SC16产品属性

  • 类型

    描述

  • 型号

    2SC16

  • 功能描述

    TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 250MA I(C) | STX-M3

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SK/森浦科/NAXIM
24+
NA/
15250
原装现货,当天可交货,原型号开票
RENESAS/瑞萨
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
RENESAS/瑞萨
25+
SOT-23
20300
RENESAS/瑞萨原装特价2SC1653即刻询购立享优惠#长期有货
NEC
24+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
23+
NA
6635
专做原装正品,假一罚百!
SK/森浦科/NAXIM
24+
SOT-23
7800
全新原厂原装正品现货,低价出售,实单可谈
NEC
24+
SOT-23
9900
新进库存/原装
NEC
2450+
SOT23-3
8850
只做原装正品假一赔十为客户做到零风险!!
NEC
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
NEC
2023+
SOT-23
50000
原装现货

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