NPN Epitaxial Planar Transistor

DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application.

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

丝印代码：L5；NPN General Purpose Transistors

Lead(Pb)-Free

丝印代码：L4；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

丝印代码：L4；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain: hFE=200TYP. ● High voltage: VCEO=50V. ● Power dissipation.(PC=200mW) APPLICATIONS ● Audio frequency general purpose amplifier.