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2SC1623晶体管资料
2SC1623别名:2SC1623三极管、2SC1623晶体管、2SC1623晶体三极管
2SC1623生产厂家:日本日电公司
2SC1623制作材料:Si-NPN
2SC1623性质:表面帖装型 (SMD)_通用型 (Uni)
2SC1623封装形式:贴片封装
2SC1623极限工作电压:60V
2SC1623最大电流允许值:0.1A
2SC1623最大工作频率:250MHZ
2SC1623引脚数:3
2SC1623最大耗散功率:0.2W
2SC1623放大倍数:
2SC1623图片代号:H-15
2SC1623vtest:60
2SC1623htest:250000000
- 2SC1623atest:0.1
2SC1623wtest:0.2
2SC1623代换 2SC1623用什么型号代替:BC846,BCV71,BCV72,BCW71,BCW72,BCX70,2SC3323,3DG120C,9014LT1,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SC1623 | AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD FEATURES •HighDCCurrentGain:hFE=200TYP. (VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | ||
2SC1623 | NPNGeneralPurposeTransistors Lead(Pb)-Free | WEITRON Weitron Technology | ||
2SC1623 | NPNSiliconEpitaxialTransistors Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
2SC1623 | SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
2SC1623 | Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TELTokyo Electron Ltd. 东电电子东京电子有限公司 | ||
2SC1623 | NPNSiliconTransistor Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | ||
2SC1623 | NPNEpitaxialPlanarTransistor DESCRIPTION The2SC1623isdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
2SC1623 | TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforaudiofrequencyamplifierapplications. | DCCOM Dc Components | ||
2SC1623 | AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONTRANSISTORMINIMOLD DESCRIPTION TheUTC2SC1623isaNPNsilicontransistorusingUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgainandhighbreakdownvoltage.TheUTC2SC1623isusuallyusedinaudiofrequencygeneralpurposeamplifier. FEATURES *HighbreakdownVoltage *HighDCCurrentGai | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
2SC1623 | SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ●HighVoltage:VCEO=50V. APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor. ●Audiofrequencygeneralpurposeamplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
2SC1623 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | ||
2SC1623 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | ||
2SC1623 | Plastic-EncapsulateTransistors FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | ||
2SC1623 | HighDCcurrentgainhFE200(Typ)VCE6V,IC1mA FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份(香港)有限公司 | ||
2SC1623 | TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
2SC1623 | SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812. Applications Audiofrequencygeneralamplifierapplication. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
2SC1623 | SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
2SC1623 | SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
2SC1623 | NPNTransistors Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
2SC1623 | SOT-323Plastic-EncapsulateTransistors FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2SC1623 | SOT-23Plastic-EncapsulateTransistors FEATURES *HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA *Highvoltage:VCEO=50V | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | ||
2SC1623 | NPNSiliconEpitaxialPlanarTransistor 文件:369.83 Kbytes Page:3 Pages | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | ||
2SC1623 | SiliconEpitaxialPlanarTransistor 文件:172.58 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
2SC1623 | SiliconPNPEpitaxialTypeTransistor 文件:380.83 Kbytes Page:4 Pages | BWTECH Bruckewell Technology LTD | ||
2SC1623 | Plastic-EncapsulateTransistors 文件:487.9 Kbytes Page:3 Pages | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 | ||
2SC1623 | NPNPlastic-EncapsulateTransistors 文件:1.37065 Mbytes Page:5 Pages | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | ||
NPNSILICONEPITAXIALTRANSISTORMINIMOLD FEATURES •HighDCCurrentGain: hFE=200TYP.(VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V SILICONTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNEpitaxialPlanarTransistor DESCRIPTION The2SC1623FisdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
GeneralPurposeTransistors Features -EpoxymeetsUL-94V-0flammability rating. -Surfacemountpackageideallysuitedfor automaticinsertion. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
NPNEpitaxialPlanarTransistor FEATURE •HighDCcurrentgain:hFE=200(Typ),VCE=6V,IC=1mA. •HighVoltage:VCEO=50V. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNTransistors Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
NPNSiliconEpitaxialTransistors Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNTransistors Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
NPNSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
GeneralPurposeTransistors Features -EpoxymeetsUL-94V-0flammability rating. -Surfacemountpackageideallysuitedfor automaticinsertion. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNTransistors Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
GeneralPurposeTransistors Features -EpoxymeetsUL-94V-0flammability rating. -Surfacemountpackageideallysuitedfor automaticinsertion. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNTransistors Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
NPNSiliconEpitaxialTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
GeneralPurposeTransistors Features -EpoxymeetsUL-94V-0flammability rating. -Surfacemountpackageideallysuitedfor automaticinsertion. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONTRANSISTORMINIMOLD DESCRIPTION TheUTC2SC1623isaNPNsilicontransistorusingUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgainandhighbreakdownvoltage.TheUTC2SC1623isusuallyusedinaudiofrequencygeneralpurposeamplifier. FEATURES *HighbreakdownVoltage *HighDCCurrentGai | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors Pb-Freepackkageisavailable | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors Pb-Freepackkageisavailable | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors Pb-Freepackkageisavailable | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 | |||
NPNTransistors Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
SiliconNPNtransistorinaSOT-89PlasticPackage Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812T. Applications Audiofrequencygeneralamplifierapplication. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
SiliconNPNtransistorinaSOT-323PlasticPackage Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812W. Applications Audiofrequencygeneralamplifierapplication. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP. ●Highvoltage:VCEO=50V. ●Powerdissipation.(PC=200mW) APPLICATIONS ●Audiofrequencygeneralpurposeamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
SiliconEpitaxialPlanarTransistor 文件:170.49 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
NPNGeneralPurposeTransistors 文件:222.95 Kbytes Page:5 Pages | WEITRON Weitron Technology | |||
SiliconEpitaxialPlanarTransistor 文件:172.58 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
NPNSILICONTRANSISTOR 文件:120.29 Kbytes Page:2 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
NPNSILICONEPITAXIALTRANSISTORMINIMOLD 文件:229.65 Kbytes Page:7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
NPNTransistors 文件:1.15992 Mbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |
2SC1623产品属性
- 类型
描述
- 型号
2SC1623
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
10404 |
支持大陆交货,美金交易。原装现货库存。 |
|||
NEC |
23+ |
NA |
12000 |
全新原装假一赔十 |
|||
CJ/长晶 |
21+ |
SOT23 |
180000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
国产 |
24+ |
SOT-23 |
15000 |
大批量供应优势库存热卖 |
|||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
23+ |
SOT23 |
63000 |
原装正品现货 |
|||
长电 |
2024 |
SOT23 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
CJ(江苏长电/长晶) |
24+ |
N/A |
7848 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
Bychip/百域芯 |
21+ |
SOT-23 |
30000 |
实单必成 质强价优 可开13点增值税 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
2SC1623规格书下载地址
2SC1623参数引脚图相关
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- 2SC162
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- 2SC1618
- 2SC1617
- 2SC1615
- 2SC1614
- 2SC1613A
- 2SC1613
- 2SC1610
- 2SC161
- 2SC1609
- 2SC1608
- 2SC1607
- 2SC1606
- 2SC1605(A)
- 2SC1590
- 2SC1586
- 2SC1585
- 2SC1584
- 2SC1583
- 2SC1580
- 2SC1579
- 2SC1577
- 2SC1576
- 2SC1573
- 2SC1571
- 2SC1570
2SC1623数据表相关新闻
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2SC2334中文资料
2019-2-18
DdatasheetPDF页码索引
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