2SC1623晶体管资料

  • 2SC1623别名:2SC1623三极管、2SC1623晶体管、2SC1623晶体三极管

  • 2SC1623生产厂家:日本日电公司

  • 2SC1623制作材料:Si-NPN

  • 2SC1623性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SC1623封装形式:贴片封装

  • 2SC1623极限工作电压:60V

  • 2SC1623最大电流允许值:0.1A

  • 2SC1623最大工作频率:250MHZ

  • 2SC1623引脚数:3

  • 2SC1623最大耗散功率:0.2W

  • 2SC1623放大倍数

  • 2SC1623图片代号:H-15

  • 2SC1623vtest:60

  • 2SC1623htest:250000000

  • 2SC1623atest:.1

  • 2SC1623wtest:.2

  • 2SC1623代换 2SC1623用什么型号代替:BC846,BCV71,BCV72,BCW71,BCW72,BCX70,2SC3323,3DG120C,9014LT1,

型号 功能描述 生产厂家&企业 LOGO 操作
2SC1623

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •HighDCCurrentGain:hFE=200TYP. (VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
2SC1623

NPNGeneralPurposeTransistors

Lead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON
2SC1623

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2SC1623

SiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SC1623

Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2SC1623

NPNSiliconTransistor

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2SC1623

NPNEpitaxialPlanarTransistor

DESCRIPTION The2SC1623isdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2SC1623

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforaudiofrequencyamplifierapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
2SC1623

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONTRANSISTORMINIMOLD

DESCRIPTION TheUTC2SC1623isaNPNsilicontransistorusingUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgainandhighbreakdownvoltage.TheUTC2SC1623isusuallyusedinaudiofrequencygeneralpurposeamplifier. FEATURES *HighbreakdownVoltage *HighDCCurrentGai

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2SC1623

SiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ●HighVoltage:VCEO=50V. APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor. ●Audiofrequencygeneralpurposeamplifier.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2SC1623

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2SC1623

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
2SC1623

Plastic-EncapsulateTransistors

FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH
2SC1623

HighDCcurrentgainhFE200(Typ)VCE6V,IC1mA

FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

MAKOSEMI
2SC1623

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SC1623

SiliconNPNtransistorinaSOT-23PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812. Applications Audiofrequencygeneralamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SC1623

SiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2SC1623

SiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
2SC1623

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SC1623

SOT-323Plastic-EncapsulateTransistors

FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SC1623

SOT-23Plastic-EncapsulateTransistors

FEATURES *HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA *Highvoltage:VCEO=50V

UMWUMW

友台友台半导体

UMW
2SC1623

NPNSiliconEpitaxialPlanarTransistor

文件:369.83 Kbytes Page:3 Pages

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
2SC1623

SiliconEpitaxialPlanarTransistor

文件:172.58 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
2SC1623

SiliconPNPEpitaxialTypeTransistor

文件:380.83 Kbytes Page:4 Pages

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

BWTECH
2SC1623

Plastic-EncapsulateTransistors

文件:487.9 Kbytes Page:3 Pages

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

赛尔斯深圳市赛尔斯科技有限公司

SHENZHENSLS
2SC1623

NPNPlastic-EncapsulateTransistors

文件:1.37065 Mbytes Page:5 Pages

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

JINGHENG

NPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •HighDCCurrentGain: hFE=200TYP.(VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V SILICONTRANSISTOR

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNEpitaxialPlanarTransistor

DESCRIPTION The2SC1623FisdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNEpitaxialPlanarTransistor

FEATURE •HighDCcurrentgain:hFE=200(Typ),VCE=6V,IC=1mA. •HighVoltage:VCEO=50V.

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNSiliconEpitaxialTransistors

Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNSiliconEpitaxialTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:hFE=600Max.(VCE=6.0V,IC=1.0mA) •Highvoltage:VCEO=50V •EpoxymeetsUL94V-0flammabilityratin

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONTRANSISTORMINIMOLD

DESCRIPTION TheUTC2SC1623isaNPNsilicontransistorusingUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgainandhighbreakdownvoltage.TheUTC2SC1623isusuallyusedinaudiofrequencygeneralpurposeamplifier. FEATURES *HighbreakdownVoltage *HighDCCurrentGai

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

GeneralPurposeTransistors

GeneralPurposeTransistors Pb-Freepackkageisavailable

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN

GeneralPurposeTransistors

GeneralPurposeTransistors Pb-Freepackkageisavailable

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN

GeneralPurposeTransistors

GeneralPurposeTransistors Pb-Freepackkageisavailable

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

YEASHIN

NPNTransistors

Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812T. Applications Audiofrequencygeneralamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconNPNtransistorinaSOT-323PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812W. Applications Audiofrequencygeneralamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighDCcurrentgain:hFE=200TYP. ●Highvoltage:VCEO=50V. ●Powerdissipation.(PC=200mW) APPLICATIONS ●Audiofrequencygeneralpurposeamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SiliconEpitaxialPlanarTransistor

文件:170.49 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

NPNGeneralPurposeTransistors

文件:222.95 Kbytes Page:5 Pages

WEITRONWEITRON

威堂電子科技

WEITRON

SiliconEpitaxialPlanarTransistor

文件:172.58 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

NPNSILICONTRANSISTOR

文件:120.29 Kbytes Page:2 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNSILICONEPITAXIALTRANSISTORMINIMOLD

文件:229.65 Kbytes Page:7 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNTransistors

文件:1.15992 Mbytes Page:2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

TRANSISTOR(NPN)

文件:136.53 Kbytes Page:1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

NPNTransistors

文件:1.26778 Mbytes Page:2 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

0.1A,60VNPNEpitaxialPlanarTransistor

文件:497.91 Kbytes Page:4 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

NPNEpitaxialPlanarTransistor

文件:497.91 Kbytes Page:4 Pages

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

2SC1623产品属性

  • 类型

    描述

  • 型号

    2SC1623

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2024-4-18 8:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
16+
SOT-23
3000
进口原装现货/价格优势!
CJ
18+
SOT23
9800
一级代理/全新原装现货/长期供应!
08+P
SOT-23
3000
库存刚更新加微13425146986
RENESAS
23+
SOT23
63000
原装正品现货
JIANGSU
12+
SMD
5776
以质为本,只做原装正品
CJ
1408+
SOT-23
999999
绝对原装进口现货可开增值税发票
NEC
16+
原厂封装
3500
原装现货假一罚十
CJ(江苏长电/长晶)
2023+
N/A
4550
全新原装正品
NEC
23+
NA
12000
全新原装假一赔十
NEC
2020+
原厂原装正品
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增

2SC1623芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

2SC1623数据表相关新闻