2SB62晶体管资料

  • 2SB62别名:2SB62三极管、2SB62晶体管、2SB62晶体三极管

  • 2SB62生产厂家:日本东芝公司

  • 2SB62制作材料:Ge-PNP

  • 2SB62性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB62封装形式:直插封装

  • 2SB62极限工作电压:60V

  • 2SB62最大电流允许值:0.5A

  • 2SB62最大工作频率:<1MHZ或未知

  • 2SB62引脚数:2

  • 2SB62最大耗散功率:4W

  • 2SB62放大倍数

  • 2SB62图片代号:E-44

  • 2SB62vtest:60

  • 2SB62htest:999900

  • 2SB62atest:0.5

  • 2SB62wtest:4

  • 2SB62代换 2SB62用什么型号代替:AD262,3AK51,

型号 功能描述 生产厂家 企业 LOGO 操作

AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SB624 is designed for use in small type equipments especially recommended for hybrid integrated circuit and other applications.

NEC

瑞萨

PNP Epitaxial Planar Transistors

WEITRON

Silicon Epitaxial Planar Transistor

FEATURES High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA) Complimentary to the 2SD596. APPLICATIONS Audio frequency amplifier. Switching appilication.

BILIN

银河微电

TRANSISTOR(PNP)

FEATURES High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596.

HTSEMI

金誉半导体

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

JIANGSU

长电科技

PNP Silicon Epitaxial Transistor

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

KEXIN

科信电子

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High hFE, complementary pair with 2SD596. Applications Audio frequency amplifier application.

FOSHAN

蓝箭电子

Micro package High dc current gain

FEATURES ● Micro package. ● High dc current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Transistors

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

YFWDIODE

佑风微

PNP Silicon Plastic Encapsulated Transistor

FEATURES  High DC Current Gain. hFE:200 (Typ.) (VCE= -1V, IC= -100mA)  Complimentary to 2SD596

SECOS

喜可士

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

Plastic-Encapsulate Transistors

Applications: Used in power amplifier circuit, complementary to 2SD596.

SHENZHENSLS

三联盛

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

SILICON TRANSISTOR

AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −30 V Collector to Em

RENESAS

瑞萨

PNP Transistors

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

YFWDIODE

佑风微

PNP Transistors

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

YFWDIODE

佑风微

PNP Transistors

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

YFWDIODE

佑风微

PNP Transistors

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

YFWDIODE

佑风微

PNP Transistors

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

YFWDIODE

佑风微

AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SB624 is designed for use in small type equipments especially recommended for hybrid integrated circuit and other applications.

NEC

瑞萨

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High VCEO APPLICATIONS • Low frequency power amplifier color TV vertical deflection output

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) • Complement to Type 2SD608 APPLICATIONS • Designed for audio frequency power amplifier and low speed switching applications.

ISC

无锡固电

SILICON TRANSISTORS

MICRO-ELECTRONICS

Audio frequency amplifier.

文件:1.16292 Mbytes Page:2 Pages

LUGUANG

鲁光电子

晶体管

JSCJ

长晶科技

Small Signal Bipolar Transistors

RENESAS

瑞萨

Silicon Epitaxial Planar Transistor

文件:261.579 Kbytes Page:4 Pages

BILIN

银河微电

Silicon Epitaxial Planar Transistor

文件:273.01 Kbytes Page:4 Pages

BILIN

银河微电

Silicon Epitaxial Planar Transistor

文件:261.579 Kbytes Page:4 Pages

BILIN

银河微电

PNP Transistors

文件:387.39 Kbytes Page:1 Pages

KEXIN

科信电子

TRANSISTOR

文件:149.57 Kbytes Page:1 Pages

WINNERJOIN

永而佳

PNP Silicon Plastic Encapsulated Transistor

文件:427.83 Kbytes Page:2 Pages

SECOS

喜可士

PNP Transistors

文件:387.39 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:401.12 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:387.39 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:401.12 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:387.39 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:401.12 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:387.39 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:401.12 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:387.39 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:401.12 Kbytes Page:1 Pages

KEXIN

科信电子

PNP Transistors

文件:401.12 Kbytes Page:1 Pages

KEXIN

科信电子

Silicon PNP Power Transistor

文件:249.04 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

文件:127.55 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

文件:248.91 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

文件:91.34 Kbytes Page:3 Pages

SAVANTIC

2SB62产品属性

  • 类型

    描述

  • 型号

    2SB62

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-92-25V -.05A .25W ECB

更新时间:2025-12-25 15:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
22+
SOT-23
8000
原装正品支持实单
NEC
23+
SOT23
8650
受权代理!全新原装现货特价热卖!
NEC
2023+
SOT-23
50000
原装现货
HT(金誉)
2447
SOT-23
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
RENESAS/瑞萨
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
CJ
23+
SOT23
8500
原厂原装正品
RENESAS
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
长电
25+
SOT-23
90000
百分百原装正品 真实公司现货库存 本公司只做原装 可
长电
25+23+
SOT-23
24364
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!

2SB62数据表相关新闻