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2SB62晶体管资料
2SB62别名:2SB62三极管、2SB62晶体管、2SB62晶体三极管
2SB62生产厂家:日本东芝公司
2SB62制作材料:Ge-PNP
2SB62性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB62封装形式:直插封装
2SB62极限工作电压:60V
2SB62最大电流允许值:0.5A
2SB62最大工作频率:<1MHZ或未知
2SB62引脚数:2
2SB62最大耗散功率:4W
2SB62放大倍数:
2SB62图片代号:E-44
2SB62vtest:60
2SB62htest:999900
- 2SB62atest:0.5
2SB62wtest:4
2SB62代换 2SB62用什么型号代替:AD262,3AK51,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SB624 is designed for use in small type equipments especially recommended for hybrid integrated circuit and other applications. | NEC 瑞萨 | |||
PNP Epitaxial Planar Transistors
| WEITRON | |||
Silicon Epitaxial Planar Transistor FEATURES High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA) Complimentary to the 2SD596. APPLICATIONS Audio frequency amplifier. Switching appilication. | BILIN 银河微电 | |||
TRANSISTOR(PNP) FEATURES High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. | HTSEMI 金誉半导体 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596. | JIANGSU 长电科技 | |||
PNP Silicon Epitaxial Transistor ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596. | KEXIN 科信电子 | |||
Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High hFE, complementary pair with 2SD596. Applications Audio frequency amplifier application. | FOSHAN 蓝箭电子 | |||
Micro package High dc current gain FEATURES ● Micro package. ● High dc current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
PNP Transistors ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596. | YFWDIODE 佑风微 | |||
PNP Silicon Plastic Encapsulated Transistor FEATURES High DC Current Gain. hFE:200 (Typ.) (VCE= -1V, IC= -100mA) Complimentary to 2SD596 | SECOS 喜可士 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596. | DGNJDZ 南晶电子 | |||
TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
Plastic-Encapsulate Transistors Applications: Used in power amplifier circuit, complementary to 2SD596. | SHENZHENSLS 三联盛 | |||
Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | |||
SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −30 V Collector to Em | RENESAS 瑞萨 | |||
PNP Transistors ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596. | YFWDIODE 佑风微 | |||
PNP Transistors ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596. | YFWDIODE 佑风微 | |||
PNP Transistors ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596. | YFWDIODE 佑风微 | |||
PNP Transistors ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596. | YFWDIODE 佑风微 | |||
PNP Transistors ■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596. | YFWDIODE 佑风微 | |||
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SB624 is designed for use in small type equipments especially recommended for hybrid integrated circuit and other applications. | NEC 瑞萨 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • High VCEO APPLICATIONS • Low frequency power amplifier color TV vertical deflection output | SAVANTIC | |||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) • Complement to Type 2SD608 APPLICATIONS • Designed for audio frequency power amplifier and low speed switching applications. | ISC 无锡固电 | |||
SILICON TRANSISTORS | MICRO-ELECTRONICS | |||
Audio frequency amplifier. 文件:1.16292 Mbytes Page:2 Pages | LUGUANG 鲁光电子 | |||
晶体管 | JSCJ 长晶科技 | |||
Small Signal Bipolar Transistors | RENESAS 瑞萨 | |||
Silicon Epitaxial Planar Transistor 文件:261.579 Kbytes Page:4 Pages | BILIN 银河微电 | |||
Silicon Epitaxial Planar Transistor 文件:273.01 Kbytes Page:4 Pages | BILIN 银河微电 | |||
Silicon Epitaxial Planar Transistor 文件:261.579 Kbytes Page:4 Pages | BILIN 银河微电 | |||
PNP Transistors 文件:387.39 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
TRANSISTOR 文件:149.57 Kbytes Page:1 Pages | WINNERJOIN 永而佳 | |||
PNP Silicon Plastic Encapsulated Transistor 文件:427.83 Kbytes Page:2 Pages | SECOS 喜可士 | |||
PNP Transistors 文件:387.39 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:401.12 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:387.39 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:401.12 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:387.39 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:401.12 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:387.39 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:401.12 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:387.39 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:401.12 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:401.12 Kbytes Page:1 Pages | KEXIN 科信电子 | |||
Silicon PNP Power Transistor 文件:249.04 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistor 文件:127.55 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon PNP Power Transistor 文件:248.91 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistors 文件:91.34 Kbytes Page:3 Pages | SAVANTIC |
2SB62产品属性
- 类型
描述
- 型号
2SB62
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-92-25V -.05A .25W ECB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
22+ |
SOT-23 |
8000 |
原装正品支持实单 |
|||
NEC |
23+ |
SOT23 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
NEC |
2023+ |
SOT-23 |
50000 |
原装现货 |
|||
HT(金誉) |
2447 |
SOT-23 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
RENESAS/瑞萨 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
CJ |
23+ |
SOT23 |
8500 |
原厂原装正品 |
|||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
长电 |
25+ |
SOT-23 |
90000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
长电 |
25+23+ |
SOT-23 |
24364 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
2SB62芯片相关品牌
2SB62规格书下载地址
2SB62参数引脚图相关
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- 2SB632K
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- 2SB628A
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- 2SB627
- 2SB626
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- 2SB622
- 2SB621A
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- 2SB621
- 2SB620
- 2SB619
- 2SB618(A)
- 2SB617(A)
- 2SB616(A)
- 2SB616
- 2SB615
- 2SB613
- 2SB612(A)
- 2SB612
- 2SB611(A)
- 2SB611
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- 2SB609
- 2SB608(A)
- 2SB608
- 2SB607
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- 2SB604
- 2SB602
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- 2SB600
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- 2SB5U9
- 2SB599
- 2SB598
- 2SB596
- 2SB595
- 2SB592A
- 2SB592
- 2SB591A
- 2SB591
- 2SB568
- 2SB567
2SB62数据表相关新闻
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www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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