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2SB624晶体管资料
2SB624别名:2SB624三极管、2SB624晶体管、2SB624晶体三极管
2SB624生产厂家:日本日电公司
2SB624制作材料:Si-PNP
2SB624性质:表面帖装型 (SMD)_低频或音频放大 (LF)
2SB624封装形式:贴片封装
2SB624极限工作电压:30V
2SB624最大电流允许值:0.7A
2SB624最大工作频率:160MHZ
2SB624引脚数:3
2SB624最大耗散功率:
2SB624放大倍数:
2SB624图片代号:H-15
2SB624vtest:30
2SB624htest:160000000
- 2SB624atest:0.7
2SB624wtest:0
2SB624代换 2SB624用什么型号代替:BCW67,BCW68,BCX17,2SA1621,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SB624 | AUDIOFREQUENCYPOWERAMPLIFIERPNPSILICONEPITAXIALTRANSISTORMINIMOLD DESCRIPTION The2SB624isdesignedforuseinsmalltypeequipmentsespeciallyrecommendedforhybridintegratedcircuitandotherapplications. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | ||
2SB624 | PNPEpitaxialPlanarTransistors
| WEITRON Weitron Technology | ||
2SB624 | Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.7A Collector-basevoltage V(BR)CBO:-30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | ||
2SB624 | SiliconEpitaxialPlanarTransistor FEATURES HighDCcurrentgain.hFE:200TYP (VCE=-1.0V,IC=-100mA) Complimentarytothe2SD596. APPLICATIONS Audiofrequencyamplifier. Switchingappilication. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
2SB624 | PNPSiliconEpitaxialTransistor ■Features ●HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) ●Complimentaryto2SD596. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | ||
2SB624 | PNPSiliconPlasticEncapsulatedTransistor FEATURES HighDCCurrentGain.hFE:200(Typ.)(VCE=-1V,IC=-100mA) Complimentaryto2SD596 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
2SB624 | TRANSISTOR(PNP) FEATURES HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) Complimentaryto2SD596. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
2SB624 | TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent ICM:-0.7A Collector-basevoltage V(BR)CBO:-30V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
2SB624 | Plastic-EncapsulateTransistors Applications: Usedinpoweramplifiercircuit,complementaryto2SD596. | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 | ||
2SB624 | SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features HighhFE,complementarypairwith2SD596. Applications Audiofrequencyamplifierapplication. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
2SB624 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) ●Complimentaryto2SD596. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
2SB624 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) ●Complimentaryto2SD596. | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | ||
2SB624 | MicropackageHighdccurrentgain FEATURES ●Micropackage. ●Highdccurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
2SB624 | PNPTransistors ■Features ●HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) ●Complimentaryto2SD596. | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
2SB624 | SiliconEpitaxialPlanarTransistor 文件:261.579 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
2SB624 | Audiofrequencyamplifier. 文件:1.16292 Mbytes Page:2 Pages | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
SILICONTRANSISTOR AUDIOFREQUENCYPOWERAMPLIFIER PNPSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •ComplementarytoNEC2SD596ANPNTransistor. •HighDCCurrentGain:hFE=200TYP.(VCE=−1.0V,IC=−100mA) ABSOLUTEMAXIMUMRATINGS(TA=25°C) CollectortoBaseVoltageVCBO−30V CollectortoEm | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
PNPTransistors ■Features ●HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) ●Complimentaryto2SD596. | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
PNPTransistors ■Features ●HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) ●Complimentaryto2SD596. | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
PNPTransistors ■Features ●HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) ●Complimentaryto2SD596. | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
PNPTransistors ■Features ●HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) ●Complimentaryto2SD596. | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
PNPTransistors ■Features ●HighDCcurrentgain.hFE:200TYP.(VCE=-1V,IC=-100mA) ●Complimentaryto2SD596. | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
AUDIOFREQUENCYPOWERAMPLIFIERPNPSILICONEPITAXIALTRANSISTORMINIMOLD DESCRIPTION The2SB624isdesignedforuseinsmalltypeequipmentsespeciallyrecommendedforhybridintegratedcircuitandotherapplications. | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SiliconEpitaxialPlanarTransistor 文件:273.01 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
SiliconEpitaxialPlanarTransistor 文件:261.579 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
PNPTransistors 文件:387.39 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
TRANSISTOR 文件:149.57 Kbytes Page:1 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
PNPSiliconPlasticEncapsulatedTransistor 文件:427.83 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
PNPTransistors 文件:387.39 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:401.12 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:387.39 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:401.12 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:387.39 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:401.12 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:387.39 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:401.12 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:387.39 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:401.12 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:401.12 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |
2SB624产品属性
- 类型
描述
- 型号
2SB624
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY NEC TRANSISTOR SC-59-30V .7A .2W SURFACE MOUNT
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
23+ |
SOT23 |
12335 |
||||
NEC |
2403+ |
SOT23 |
6489 |
原装现货热卖!十年芯路!坚持! |
|||
NEC |
24+ |
SOT23-3 |
5000 |
原装现货 |
|||
CJ/长电 |
24+ |
SOT-23 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
24+ |
SOT23-3 |
5000 |
全新原装正品,现货销售 |
|||
长电 |
25+23+ |
SOT-23 |
24364 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
24+ |
SOT-23 |
17500 |
郑重承诺只做原装进口现货 |
|||
NEC |
23+ |
SOT-23 |
24190 |
原装正品代理渠道价格优势 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
24+ |
SOT23 |
65200 |
一级代理/放心采购 |
2SB624规格书下载地址
2SB624参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB647A
- 2SB647
- 2SB646A
- 2SB646
- 2SB645
- 2SB644
- 2SB643
- 2SB642
- 2SB639(H)
- 2SB638(H)
- 2SB638
- 2SB637(K)
- 2SB636
- 2SB635
- 2SB634
- 2SB633P
- 2SB633
- 2SB632K
- 2SB632
- 2SB631K
- 2SB631
- 2SB630
- 2SB63
- 2SB628A
- 2SB628
- 2SB627
- 2SB626
- 2SB625
- 2SB624R
- 2SB622
- 2SB621A
- 2SB621(NC)
- 2SB621
- 2SB620
- 2SB62
- 2SB619
- 2SB618(A)
- 2SB617(A)
- 2SB616(A)
- 2SB616
- 2SB615
- 2SB613
- 2SB612(A)
- 2SB612
- 2SB611(A)
- 2SB611
- 2SB61
- 2SB609
- 2SB608(A)
- 2SB608
- 2SB607
- 2SB606
- 2SB605
- 2SB604
- 2SB601
- 2SB600
- 2SB5U9
- 2SB598
- 2SB596
- 2SB595
- 2SB592A
- 2SB592
- 2SB591A
- 2SB591
- 2SB568
- 2SB567
2SB624数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
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2023-3-142SB776L-TO252R-P-TG_UTC代理商
2SB776L-TO252R-P-TG_UTC代理商
2023-2-242SB834L-TO220FT-O-TG_UTC代理商
2SB834L-TO220FT-O-TG_UTC代理商
2023-2-92SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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