AUDIO FREQUENCY POWER AMPLIFIER

PNP SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

• Complementary to NEC 2SD596A NPN Transistor.

• High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage VCBO −30 V

Collector to Emitter Voltage VCEO −25 V

Emitter to Base Voltage VEBO −5.0 V

Collector Current (DC) IC −700 mA

Total Power Dissipation PT 200 mW

Junction Temperature Tj 150 °C

Storage Temperature Range Tstg −55 to +150 °C