SILICON TRANSISTOR

AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −30 V Collector to Em

Transistor-Bipolar Small Signal Transistors

AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

DESCRIPTION The 2SB624 is designed for use in small type equipments especially recommended for hybrid integrated circuit and other applications.

PNP Epitaxial Planar Transistors

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

丝印代码：BV*；Silicon Epitaxial Planar Transistor

FEATURES High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA) Complimentary to the 2SD596. APPLICATIONS Audio frequency amplifier. Switching appilication.

PNP Silicon Epitaxial Transistor

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.