SILICON TRANSISTOR

AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −30 V Collector to Em

Transistor-Bipolar Small Signal Transistors

PNP Epitaxial Planar Transistors

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: -0.7 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

丝印代码：BV*；Silicon Epitaxial Planar Transistor

FEATURES High DC current gain.hFE: 200TYP (VCE=-1.0V,IC=-100mA) Complimentary to the 2SD596. APPLICATIONS Audio frequency amplifier. Switching appilication.

PNP Silicon Epitaxial Transistor

■ Features ● High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) ● Complimentary to 2SD596.

PNP Silicon Plastic Encapsulated Transistor

FEATURES  High DC Current Gain. hFE：200 (Typ.) (VCE= -1V, IC= -100mA)  Complimentary to 2SD596