2SB60晶体管资料

  • 2SB60(A)别名:2SB60(A)三极管、2SB60(A)晶体管、2SB60(A)晶体三极管

  • 2SB60(A)生产厂家:日本富士通公司

  • 2SB60(A)制作材料:Ge-PNP

  • 2SB60(A)性质:低频或音频放大 (LF)

  • 2SB60(A)封装形式:直插封装

  • 2SB60(A)极限工作电压:20V

  • 2SB60(A)最大电流允许值:0.05A

  • 2SB60(A)最大工作频率:<1MHZ或未知

  • 2SB60(A)引脚数:3

  • 2SB60(A)最大耗散功率:0.15W

  • 2SB60(A)放大倍数

  • 2SB60(A)图片代号:C-47

  • 2SB60(A)vtest:20

  • 2SB60(A)htest:999900

  • 2SB60(A)atest:0.05

  • 2SB60(A)wtest:0.15

  • 2SB60(A)代换 2SB60(A)用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52A,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For low-frequency power amplifier and low-speed switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications

ISC

无锡固电

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output fo

NEC

瑞萨

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications

JMNIC

锦美电子

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ lc=-3A • Collector-Emitter Sustaining Voltage- : VCEO(sus)=-100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@lc=-3A APPLICATIONS • Designed for use in low-frequency power amplifiers and low-speed s

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output

RENESAS

瑞萨

PNP SILICON TRANSISTOR

DESCRIPTION The 2SB605 is designed for use in driver and output stages of audio frequency amplifiers.

NEC

瑞萨

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application

SAVANTIC

Silicon PNP Power Transistors

文件:109.7 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:125.08 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

文件:150.38 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:150.38 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:118.7 Kbytes Page:3 Pages

SAVANTIC

Trans Darlington NPN 300V 5A 3-Pin(3+Tab) MP-25

ETC

知名厂家

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Silicon PNP Power Transistors

文件:177.42 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:177.42 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon transistor

NEC

瑞萨

Silicon PNP Power Transistor

文件:253.8 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

文件:254.47 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

文件:111.98 Kbytes Page:3 Pages

SAVANTIC

Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 800 V Forward Current 1.5A

Features • Low reverse leakage • High forward surge capability • 80 A Surge overload rating:80 Amperes peak • Lead and body according with RoHS standard

DACHANG

大昌电子

Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for printed circuit board - High case dielectric strength - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

Single-phase Silicon Bridge Rectifier

Features • Low reverse leakage • High forward surge capability • 80 A Surge overload rating:80 Amperes peak

PFS

平盛电子

General Purpose Rectifiers(600V 1.5A)

Bridge Diode Feature • Thin-SIP • Large IFSM

SHINDENGEN

Single Phase 2.0AMPS. Glass Passivated Bridge Rectifiers

文件:124.12 Kbytes Page:2 Pages

TSC

台湾半导体

2SB60产品属性

  • 类型

    描述

  • 型号

    2SB60

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    Silicon PNP Power Transistors

更新时间:2026-3-13 19:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
ST
2511
CAN to-39
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS瑞萨
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
ST
23+
CAN to-39
16900
正规渠道,只有原装!
T/NEC
2023+
CAN
50000
全新原装现货
24+
30000
NEC
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST
26+
CAN to-39
60000
只有原装 可配单

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