2SB60晶体管资料

  • 2SB60(A)别名:2SB60(A)三极管、2SB60(A)晶体管、2SB60(A)晶体三极管

  • 2SB60(A)生产厂家:日本富士通公司

  • 2SB60(A)制作材料:Ge-PNP

  • 2SB60(A)性质:低频或音频放大 (LF)

  • 2SB60(A)封装形式:直插封装

  • 2SB60(A)极限工作电压:20V

  • 2SB60(A)最大电流允许值:0.05A

  • 2SB60(A)最大工作频率:<1MHZ或未知

  • 2SB60(A)引脚数:3

  • 2SB60(A)最大耗散功率:0.15W

  • 2SB60(A)放大倍数

  • 2SB60(A)图片代号:C-47

  • 2SB60(A)vtest:20

  • 2SB60(A)htest:999900

  • 2SB60(A)atest:0.05

  • 2SB60(A)wtest:0.15

  • 2SB60(A)代换 2SB60(A)用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52A,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications

SAVANTIC

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ lc=-3A • Collector-Emitter Sustaining Voltage- : VCEO(sus)=-100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@lc=-3A APPLICATIONS • Designed for use in low-frequency power amplifiers and low-speed s

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For low-frequency power amplifier and low-speed switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications

ISC

无锡固电

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output fo

NEC

瑞萨

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output

RENESAS

瑞萨

PNP SILICON TRANSISTOR

DESCRIPTION The 2SB605 is designed for use in driver and output stages of audio frequency amplifiers.

NEC

瑞萨

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application

SAVANTIC

Silicon PNP Power Transistors

文件:109.7 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:125.08 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

文件:150.38 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:150.38 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:118.7 Kbytes Page:3 Pages

SAVANTIC

Trans Darlington NPN 300V 5A 3-Pin(3+Tab) MP-25

ETC

知名厂家

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Silicon PNP Power Transistors

文件:177.42 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:177.42 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon transistor

NEC

瑞萨

Silicon PNP Power Transistor

文件:253.8 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

文件:254.47 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

文件:111.98 Kbytes Page:3 Pages

SAVANTIC

Single-phase Silicon Bridge Rectifier

Features • Low reverse leakage • High forward surge capability • 80 A Surge overload rating:80 Amperes peak

PFS

平盛电子

Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for printed circuit board - High case dielectric strength - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 800 V Forward Current 1.5A

Features • Low reverse leakage • High forward surge capability • 80 A Surge overload rating:80 Amperes peak • Lead and body according with RoHS standard

DACHANG

大昌电子

General Purpose Rectifiers(600V 1.5A)

Bridge Diode Feature • Thin-SIP • Large IFSM

SHINDENGEN

Single Phase 2.0AMPS. Glass Passivated Bridge Rectifiers

文件:124.12 Kbytes Page:2 Pages

TSC

台湾半导体

2SB60产品属性

  • 类型

    描述

  • 型号

    2SB60

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    Silicon PNP Power Transistors

更新时间:2025-12-25 15:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
TO-220
5000
只做原装正品现货 欢迎来电查询15919825718
SEC
25+
TO220
54648
百分百原装现货 实单必成 欢迎询价
NEC
23+
63544
原厂授权代理,海外优势订货渠道。可提供大量库存,详
SEC
24+
TO220
990000
明嘉莱只做原装正品现货
NSC
24+
2927
ST
26+
TO-220
60000
只有原装 可配单
ST
24+
TO-220
200000
原装进口正口,支持样品
ST
23+
TO-220
16900
正规渠道,只有原装!
NEC
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
ST
22+
TO-220
6000
十年配单,只做原装

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