Silicon transistor

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ lc=-3A • Collector-Emitter Sustaining Voltage- : VCEO(sus)=-100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@lc=-3A APPLICATIONS • Designed for use in low-frequency power amplifiers and low-speed s

Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For low-frequency power amplifier and low-speed switching applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output fo

Silicon PNP Power Transistors

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