2SB601晶体管资料
2SB601别名：2SB601三极管、2SB601晶体管、2SB601晶体三极管
2SB601生产厂家：日本日电公司
2SB601制作材料：Si-P+Darl+Di
2SB601性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB601封装形式：直插封装
2SB601极限工作电压：100V
2SB601最大电流允许值：5A
2SB601最大工作频率：<1MHZ或未知
2SB601引脚数：3
2SB601最大耗散功率：30W
2SB601放大倍数：β>2000
2SB601图片代号：B-89
2SB601vtest：100
2SB601htest：999900
- 2SB601atest：5
2SB601wtest：30
2SB601代换 2SB601用什么型号代替：BD264B,BD650,BD702,BD902,BDW24C,BDW64C,BDW64D,BD650,FC50B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB601 | Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications | JMNIC 锦美电子 |   | |
2SB601 | Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For low-frequency power amplifier and low-speed switching applications | SAVANTIC | | |
2SB601 | Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications | ISC 无锡固电 | | |
2SB601 | PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output fo | NEC 瑞萨 | | |
2SB601 | Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ lc=-3A • Collector-Emitter Sustaining Voltage- : VCEO(sus)=-100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@lc=-3A APPLICATIONS • Designed for use in low-frequency power amplifiers and low-speed s | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2SB601 | SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output | RENESAS 瑞萨 | | |
2SB601 | Trans Darlington NPN 300V 5A 3-Pin(3+Tab) MP-25 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2SB601 | Transistor-Bipolar Power Transistors | RENESAS 瑞萨 | | |
2SB601 | Silicon PNP Power Transistors 文件：118.7 Kbytes Page：3 Pages | SAVANTIC | | |
Silicon PNP Power Transistors 文件：177.42 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：177.42 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon transistor | NEC 瑞萨 | |
2SB601产品属性
- 类型
描述
- NPN/PNP：
PNP
- Vcbo (V)：
-100
- VCEO (V)：
-100
- Vebo (V)：
-7
- Automotive：
YES
- IC (A) @25 °C：
-5
- VCE(sat) (V) max.：
-1.5
- hFE min.：
2000
- hFE max.：
15000
- Pc (W)：
30
- Package Type：
MP-25
- Production Status：
EOL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||||
SEC |
2026+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
NEC |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
RENESAS瑞萨 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
NEC |
24+ |
TO-220 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ST |
25+ |
TO-220 |
20000 |
原装，请咨询 |
|||
NSC |
24+ |
2927 |
|||||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
NEC |
23+ |
63544 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
ST |
26+ |
TO-220 |
60000 |
只有原装 可配单 |
2SB601芯片相关品牌
2SB601规格书下载地址
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2SB601数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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