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2SB601晶体管资料
2SB601别名：2SB601三极管、2SB601晶体管、2SB601晶体三极管
2SB601生产厂家：日本日电公司
2SB601制作材料：Si-P+Darl+Di
2SB601性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB601封装形式：直插封装
2SB601极限工作电压：100V
2SB601最大电流允许值：5A
2SB601最大工作频率：<1MHZ或未知
2SB601引脚数：3
2SB601最大耗散功率：30W
2SB601放大倍数：β>2000
2SB601图片代号：B-89
2SB601vtest：100
2SB601htest：999900
- 2SB601atest：5
2SB601wtest：30
2SB601代换 2SB601用什么型号代替：BD264B,BD650,BD702,BD902,BDW24C,BDW64C,BDW64D,BD650,FC50B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB601 | Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications | JMNIC 锦美电子 |   | |
2SB601 | Silicon PNP Power Transistors DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For low-frequency power amplifier and low-speed switching applications | SAVANTIC | | |
2SB601 | Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For low-frequency power amplifier and low-speed switching applications | ISC 无锡固电 | | |
2SB601 | PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output fo | NEC 瑞萨 | | |
2SB601 | Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ lc=-3A • Collector-Emitter Sustaining Voltage- : VCEO(sus)=-100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@lc=-3A APPLICATIONS • Designed for use in low-frequency power amplifiers and low-speed s | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2SB601 | SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output | RENESAS 瑞萨 | | |
2SB601 | Trans Darlington NPN 300V 5A 3-Pin(3+Tab) MP-25 | ETC 知名厂家 | ETC | |
2SB601 | Transistor-Bipolar Power Transistors | RENESAS 瑞萨 | | |
2SB601 | Silicon PNP Power Transistors 文件：118.7 Kbytes Page：3 Pages | SAVANTIC | | |
Silicon PNP Power Transistors 文件：177.42 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：177.42 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon transistor | NEC 瑞萨 | |
2SB601产品属性
- 类型
描述
- 型号
2SB601
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
PNP SILICON EPITAXIAL TRANSISTOR(DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
63544 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ST |
24+ |
TO-220 |
200000 |
原装进口正口,支持样品 |
|||
NEC |
2023+ |
TO-220 |
58000 |
进口原装,现货热卖 |
|||
NEC |
24+ |
TO-220 |
60000 |
全新原装现货 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
||||
ST |
24+ |
TO-220 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
NEC |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
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2SB601规格书下载地址
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2SB601数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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