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2SB119晶体管资料

2SB119别名：2SB119三极管、2SB119晶体管、2SB119晶体三极管
2SB119生产厂家：日本松下公司
2SB119制作材料：Ge-PNP
2SB119性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SB119封装形式：直插封装
2SB119极限工作电压：32V
2SB119最大电流允许值：1.5A
2SB119最大工作频率：<1MHZ或未知
2SB119引脚数：2
2SB119最大耗散功率：50W
2SB119放大倍数：
2SB119图片代号：E-44
2SB119vtest：32
2SB119htest：999900
2SB119atest：1.5
2SB119wtest：50

2SB119代换 2SB119用什么型号代替：AD149,AD166,2N2137,2N2142,2SB449,3AD56A,

2SB119价格

参考价格：￥0.2459

型号：2SB1197KT146Q 品牌：Rohm 备注：这里有2SB119多少钱，2025年最近7天走势，今日出价，今日竞价，2SB119批发/采购报价，2SB119行情走势销售排行榜，2SB119报价。

型号	功能描述	生产厂家企业	LOGO
2SB1190	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • High VCEO • Large PC • Complement to type 2SD1772 APPLICATIONS • Power amplifier • TV vertical deflection output	ISC 无锡固电	ISC
2SB1190	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • High VCEO • Large PC • Complement to type 2SD1772 APPLICATIONS • Power amplifier • TV vertical deflection output	JMNIC 锦美电子	JMNIC
2SB1190	Silicon PNP Power Transistor DESCRIPTION • High Power Dissipation • High Collector-Emitter Breakdown Voltage- :V(BR)CEO=-150V(Min.) • Complement to Type 2SD1770 APPLICATIONS • Power amplifier applications. • TV vertical deflection output applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1190	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • High VCEO • Large PC • Complement to type 2SD1772 APPLICATIONS • Power amplifier • TV vertical deflection output	SAVANTIC	SAVANTIC
2SB1192	Silicon PNP Power Transistor DESCRIPTION • High Power Dissipation • High Collector-Emitter BreakdownVoltage- :V(BR)cEo=-150V(Min.) • Complement to Type 2SD1772 APPLICATIONS • Power amplifier applications. • TV vertical deflection output applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1192	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High VCEO • Large PC • Complement to type 2SD1770 APPLICATIONS • Power amplifier • TV vertical deflection output	SAVANTIC	SAVANTIC
2SB1192	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High VCEO • Large PC • Complement to type 2SD1770 APPLICATIONS • Power amplifier • TV vertical deflection output	ISC 无锡固电	ISC
2SB1192	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High VCEO • Large PC • Complement to type 2SD1770 APPLICATIONS • Power amplifier • TV vertical deflection output	JMNIC 锦美电子	JMNIC
2SB1193	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • High speed switching • DARLINGTON • Complement to type 2SD1773 APPLICATIONS • For medium speed switching applications	JMNIC 锦美电子	JMNIC
2SB1193	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • High speed switching • DARLINGTON • Complement to type 2SD1773 APPLICATIONS • For medium speed switching applications	ISC 无锡固电	ISC
2SB1193	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • High speed switching • DARLINGTON • Complement to type 2SD1773 APPLICATIONS • For medium speed switching applications	SAVANTIC	SAVANTIC
2SB1193	For Midium-Speed Power Switching Silicon PNP epitaxial planar type darlington For midium-speed power switching Complementary to 2SD1773 ■ Features • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw	Panasonic 松下	Panasonic
2SB1194	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • High speed switching • DARLINGTON • Complement to type 2SD1633 APPLICATIONS • For power switching applications	SAVANTIC	SAVANTIC
2SB1194	Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- :VCEo(susr-100V(Min) • High DC Current Gain- : hFE 1500(Min)@ (VCE= -3V, lc= -3A) • Complement to Type 2SD1633 APPLICATIONS • Designed for power amplifier applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1194	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • High speed switching • DARLINGTON • Complement to type 2SD1633 APPLICATIONS • For power switching applications	ISC 无锡固电	ISC
2SB1194	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • High speed switching • DARLINGTON • Complement to type 2SD1633 APPLICATIONS • For power switching applications	JMNIC 锦美电子	JMNIC
2SB1197	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Low VCE(sat).VCE(sat)	JIANGSU 长电科技	JIANGSU
2SB1197	TRANSISTOR(PNP) FEATURES • Low VCE(sat).VCE(sat)	HTSEMI 金誉半导体	HTSEMI
2SB1197	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF	MCC	MCC
2SB1197	Silicon Epitaxial Planar Transistor FEATURES ● Small surface mounting type. ● Corredtor peak current(Max.=1000mA). ● Suitable for high packing density. ● Low voltage(Max.=40v). ● High saturation current capability. ● Voltage controlled small signal switch. APPLICATIONS ● Telephone and professional communication equipment. ●	BILIN 银河微电	BILIN
2SB1197	PNP Epitaxial Planar Transistor FEATURES • Low VCE(sat).VCE(sat)≦ -0.5V(IC / IB = -0.5A /-50mA) • IC =-0.8A • Complements of the 2SD1781	SECOS 喜可士	SECOS
2SB1197A	PNP Low Vce(sat) Transistor Features  Silicon PNP epitaxial type  Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)	PANJIT 強茂	PANJIT
2SB1197A_R1_00001	PNP Low Vce(sat) Transistor Features  Silicon PNP epitaxial type  Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)	PANJIT 強茂	PANJIT
2SB1197A_R2_00001	PNP Low Vce(sat) Transistor Features  Silicon PNP epitaxial type  Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)	PANJIT 強茂	PANJIT
2SB1197K	Low Frequency Transistor Features ● Low VCE(sat).VCE(sat) ≤ -0.5V (IC / IB= -0.5A / -50mA). ● IC = -0.8A. ● PNP silicon transistor	KEXIN 科信电子	KEXIN
2SB1197K	Low Frequency Transistor(-32V, -0.8A) Features 1) Low VCE(sat). VCE(sat) ≤ 0.5V (IC / IB= -0.5A / -50mAͅ) 2) IC = -0.8A. 3) Complements the 2SD1781K.	ROHM 罗姆	ROHM
2SB1197K	PNP General Purpose Transistors PNP General Purpose Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SB1197K	Low Frequency Transistor FEATURES • Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) • IC =-0.8A	SECOS 喜可士	SECOS
2SB1197K	TRANSISTOR (PNP) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SB1197K	Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low VCE(sat),complements the 2SD1781K. Applications Low frequency amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1197K	Low Frequency Transistor Features ● Low VCE(sat).VCE(sat) ≤ -0.5V (IC / IB= -0.5A / -50mA). ● IC = -0.8A. ● PNP silicon transistor	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SB1197K	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SB1197KFRA	Low Frequency Transistor (-32V, -0.8A) Features 1) Low VCE(sat). 　VCE(sat)≦　-500mV 　( IC= -500mA / I B= -50mA) 2) IC= -0.8A. Application LOW FREQUENCY POWER AMPLIFIER	ROHM 罗姆	ROHM
2SB1197KFRAT146Q	Low Frequency Transistor (-32V, -0.8A) Features 1) Low VCE(sat). 　VCE(sat)≦　-500mV 　( IC= -500mA / I B= -50mA) 2) IC= -0.8A. Application LOW FREQUENCY POWER AMPLIFIER	ROHM 罗姆	ROHM
2SB1197KPT	PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere FEATURE * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1000mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capability. * Voltage controlled small signal switch. APPLICATION * Telepho	CHENMKO 力勤	CHENMKO
2SB1197KQ	Low Frequency Transistor Features ● Low VCE(sat).VCE(sat) ≤ -0.5V (IC / IB= -0.5A / -50mA). ● IC = -0.8A. ● PNP silicon transistor	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SB1197KR	Low Frequency Transistor Features ● Low VCE(sat).VCE(sat) ≤ -0.5V (IC / IB= -0.5A / -50mA). ● IC = -0.8A. ● PNP silicon transistor	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SB1197KXLT1	Low Frequency Transistor PNP Silicon FEATURE ● High current capacity in compact package. IC = í0.8A. ● Epitaxial planar type. ● NPN complement: 2SD1781K ● We declare that the material of product compliance with RoHS requirements. Pb-Free package is available RoHS product for packing code suffix G Halog	WILLAS 威伦电子	WILLAS
2SB1197-P	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF	MCC	MCC
2SB1197-Q	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF	MCC	MCC
2SB1197-R	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF	MCC	MCC
2SB1198	LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE(sat) : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)	UTC 友顺	UTC
2SB1198	Low-frequency Transistor(-80V, -0.5A) Features 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High breakdown voltage. BVCEO = 80V 3) Complements the 2SD1782K.	ROHM 罗姆	ROHM
2SB1198	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low VCE(sat) ● High breakdown voltage	JIANGSU 长电科技	JIANGSU
2SB1198	SOT-23 Plastic-Encapsulate Transistors FEATURES Low VCE(sat) High breakdown voltage	DGNJDZ 南晶电子	DGNJDZ
2SB1198K	PNP Silicon General Purpose Transistor FEATURES Power dissipation PCM : 0.2 W Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -80 V Operating and storage junction temperature range TJ Tstg: -55°C to +150°C	SECOS 喜可士	SECOS
2SB1198K	Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High breakdown, low VCE(sat),complements the 2SD1782K. Applications Medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1198K	Low-frequency Transistor(-80V, -0.5A) Features 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High breakdown voltage. BVCEO = 80V 3) Complements the 2SD1782K.	ROHM 罗姆	ROHM
2SB1198KFRA	Power Transistor (-80V, -500mA) Features 1)Low VCE(sat) 　 VCE(sat)=-200mV(Typ.) 　 (IC/IB=-500mA/-50mA) 2)High breakdown voltage. 　 BVCEO=-80V 3)Complements the 2SD1782K FRA. Application DRIVER	ROHM 罗姆	ROHM
2SB1190	Silicon PNP Power Transistors 文件：96.07 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1190_15	Silicon PNP Power Transistors 文件：164.72 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1190_2014	Silicon PNP Power Transistors 文件：164.72 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1192	Silicon PNP Power Transistors 文件：117.06 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1192_15	Silicon PNP Power Transistors 文件：169.75 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1192_2014	Silicon PNP Power Transistors 文件：169.75 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1193	Silicon PNP Power Transistors 文件：131.54 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1193_15	Silicon PNP Power Transistors 文件：151.86 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1193_2014	Silicon PNP Power Transistors 文件：151.86 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1194	Silicon PNP Power Transistors 文件：135.64 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1194_15	Silicon PNP Power Transistors 文件：162.25 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC

2SB119产品属性

类型
描述
型号
2SB119
制造商
Distributed By MCM
功能描述
SUB ONLY TRANSISTOR TO-220AB -200V -1A 25W BCE

2SB119供应商更多...

更新时间：2025-12-25 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市金芯世纪电子有限公司	2SB1198	UTC/友顺	22+	SOT-23	100000	代理渠道/只做原装/可含税	询价
深圳市得捷芯城科技有限公司	2SB1198	UTC/友顺	24+	NA/	25494	原装现货,当天可交货,原型号开票	询价
深圳市赛美科科技有限公司	2SB1198K	ROHM		SOT-23	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市斌腾达科技有限公司	2SB1198K	ROHM	21+	SOT-346	21000	一级代理进口原装!长期供应!绝对优势价格(诚信经营	询价
中天科工半导体（深圳）有限公司	2SB1198KT146R	ROHM/罗姆	25+	SOT23	32360	ROHM/罗姆全新特价2SB1198KT146R即刻询购立享优惠#长期有货	询价
深圳市凯睿晟科技有限公司	2SB1198	CJ/长电	21+	SOT-23	30000	百域芯优势实单必成可开13点增值税发票	询价
深圳市正纳电子有限公司	2SB1198K	Rohm(罗姆)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市振宏微科技有限公司	2SB1198K	SMD	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市华斯顿科技有限公司	2SB1198	长电	25+23+	SOT-23	24366	绝对原装正品全新进口深圳现货	询价
贸泽芯城（深圳）电子科技有限公司	2SB1198KT146R	ROHM	23+	SC-59-3	48000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

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2SB119晶体管资料

2SB119价格

2SB119产品属性

2SB119供应商更多...

2SB119芯片相关品牌

2SB119规格书下载地址

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2SB119数据表相关新闻

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2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引