PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)

低电压双极晶体管

PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

Silicon Epitaxial Planar Transistor

FEATURES ● Small surface mounting type. ● Corredtor peak current(Max.=1000mA). ● Suitable for high packing density. ● Low voltage(Max.=40v). ● High saturation current capability. ● Voltage controlled small signal switch. APPLICATIONS ● Telephone and professional communication equipment. ●

PNP Epitaxial Planar Transistor

FEATURES • Low VCE(sat).VCE(sat)≦ -0.5V(IC / IB = -0.5A /-50mA) • IC =-0.8A • Complements of the 2SD1781

TRANSISTOR(PNP)

FEATURES • Low VCE(sat).VCE(sat)

PNP Epitaxial Planar Transistor

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PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 3A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个