Low Frequency Transistor (-32V, -0.8A)

Features 1) Low VCE(sat). 　VCE(sat)≦　-500mV 　( IC= -500mA / I B= -50mA) 2) IC= -0.8A. Application LOW FREQUENCY POWER AMPLIFIER

低频功率放大用 (-32V, -0.8A)

PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF

Silicon Epitaxial Planar Transistor

FEATURES ● Small surface mounting type. ● Corredtor peak current(Max.=1000mA). ● Suitable for high packing density. ● Low voltage(Max.=40v). ● High saturation current capability. ● Voltage controlled small signal switch. APPLICATIONS ● Telephone and professional communication equipment. ●

PNP Epitaxial Planar Transistor

FEATURES • Low VCE(sat).VCE(sat)≦ -0.5V(IC / IB = -0.5A /-50mA) • IC =-0.8A • Complements of the 2SD1781

TRANSISTOR(PNP)

FEATURES • Low VCE(sat).VCE(sat)

PNP Epitaxial Planar Transistor

文件：698.92 Kbytes Page：2 Pages

Low Frequency Transistor (-32V, -0.8A)

Features 1) Low VCE(sat). 　VCE(sat)≦　-500mV 　( IC= -500mA / I B= -50mA) 2) IC= -0.8A. Application LOW FREQUENCY POWER AMPLIFIER