丝印代码：T146；Low-frequency Transistor(-80V, -0.5A)

Features 1) Low VCE(sat). VCE(sat) =
0.2V (Typ.) (IC / IB =
0.5A /
50mA) 2) High breakdown voltage. BVCEO =
80V 3) Complements the 2SD1782K.

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High breakdown, low VCE(sat),complements the 2SD1782K. Applications Medium power amplifier applications.

PNP Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 0.2 W Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -80 V Operating and storage junction temperature range TJ Tstg: -55°C to +150°C

Driver Transistor

•启动用表面安装型三极管;

SOT-23-3L Bipolar Junction Transistors

双极晶体管

Low-frequency Transistor (-80V, -0.5A)

文件：104.77 Kbytes Page：4 Pages

PNP Silicon Epitaxial Planar Transistor

文件：290.03 Kbytes Page：2 Pages

PNP Transistors

文件：736.82 Kbytes Page：2 Pages

丝印代码：AK；Power Transistor (-80V, -500mA)

Features 1)Low VCE(sat) 　 VCE(sat)=-200mV(Typ.) 　 (IC/IB=-500mA/-50mA) 2)High breakdown voltage. 　 BVCEO=-80V 3)Complements the 2SD1782K FRA. Application DRIVER

Low-frequency Transistor (-80V, -0.5A)

文件：104.77 Kbytes Page：4 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Low-frequency Transistor(-80V, -0.5A)

Features 1) Low VCE(sat). VCE(sat) =
0.2V (Typ.) (IC / IB =
0.5A /
50mA) 2) High breakdown voltage. BVCEO =
80V 3) Complements the 2SD1782K.

LOW FREQUENCY PNP TRANSISTOR

DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE(sat) : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)

LOW FREQUENCY PNP TRANSISTOR

文件：249.93 Kbytes Page：4 Pages