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2SB112晶体管资料

2SB112别名：2SB112三极管、2SB112晶体管、2SB112晶体三极管
2SB112生产厂家：日本日电公司
2SB112制作材料：Ge-PNP
2SB112性质：低频或音频放大（LF）
2SB112封装形式：直插封装
2SB112极限工作电压：25V
2SB112最大电流允许值：0.05A
2SB112最大工作频率：<1MHZ或未知
2SB112引脚数：3
2SB112最大耗散功率：0.1W
2SB112放大倍数：β>43
2SB112图片代号：C-47
2SB112vtest：25
2SB112htest：999900
2SB112atest：0.05
2SB112wtest：0.1

2SB112代换 2SB112用什么型号代替：AC125,AC126,AC151,2SB54,2SB56,

2SB112价格

参考价格：￥0.8150

型号：2SB1121T-TD-E 品牌：ON 备注：这里有2SB112多少钱，2025年最近7天走势，今日出价，今日竞价，2SB112批发/采购报价，2SB112行情走势销售排行榜，2SB112报价。

型号	功能描述	生产厂家企业	LOGO
2SB1120	High-Current Driver Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)max=–0.45V. • Large current capacity : IC=–2.5A, ICP=–5A. • Very small size making it easy to provide high density, small-sized hybrid IC’s. Applications • Strobes, voltage regulators, relay drivers, lamp drivers.	SANYO 三洋	SANYO
2SB1120	PNP Epitaxial Planar Silicon Transistors Features ● Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. ● Large current capacity : IC=-2.5A, ICP=-5A. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s.	KEXIN 科信电子	KEXIN
2SB1120_15	PNP Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.	KEXIN 科信电子	KEXIN
2SB1120-E	PNP Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.	KEXIN 科信电子	KEXIN
2SB1120-F	PNP Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.	KEXIN 科信电子	KEXIN
2SB1120-G	PNP Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.	KEXIN 科信电子	KEXIN
2SB1121	PNP Epitaxial Planar Silicon Transistors ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1621	KEXIN 科信电子	KEXIN
2SB1121	High-Current Driver Applications? Features ¥ Adoption of FBET, MBIT processes. ¥ Low collector-to-emitter saturation voltage. ¥ Large current capacity and wide ASO. ¥ Fast switching speed. ¥ Ultrasmall size making it easy to provide high-density, small-sized hybrid ICÕs. Applications ¥ Voltage regulators, relay drivers, lam	SANYO 三洋	SANYO
2SB1121	Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity and wide SOA • Low collector to emitter saturation voltage • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applications • Voltage regulators, relay drivers, lamp dri	ONSEMI 安森美半导体	ONSEMI
2SB1121S-TD-E	Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity and wide SOA • Low collector to emitter saturation voltage • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applications • Voltage regulators, relay drivers, lamp dri	ONSEMI 安森美半导体	ONSEMI
2SB1121T-TD-E	Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity and wide SOA • Low collector to emitter saturation voltage • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applications • Voltage regulators, relay drivers, lamp dri	ONSEMI 安森美半导体	ONSEMI
2SB1122	Low-Frequency Power Amp Applications? Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment.	SANYO 三洋	SANYO
2SB1122	Bipolar Transistor -50V, -1A, Low VCE(sat) PNP Single PCP Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET process • Ultrasmall size making it easy to provide high-density hybrid IC’s Applicaitons • Voltage regulators relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SB1122	PNP Epitaxial Planar Silicon Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Complementary to 2SD1622	KEXIN 科信电子	KEXIN
2SB1122-D	Low-Frequency Power Amplifier Applications Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment.	SANYO 三洋	SANYO
2SB1122S-TD-E	Bipolar Transistor -50V, -1A, Low VCE(sat) PNP Single PCP Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET process • Ultrasmall size making it easy to provide high-density hybrid IC’s Applicaitons • Voltage regulators relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SB1122T-TD-E	Bipolar Transistor -50V, -1A, Low VCE(sat) PNP Single PCP Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET process • Ultrasmall size making it easy to provide high-density hybrid IC’s Applicaitons • Voltage regulators relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SB1123	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123	Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123	High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied	SANYO 三洋	SANYO
2SB1123	High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied	SANYO 三洋	SANYO
2SB1123	High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	KEXIN 科信电子	KEXIN
2SB1123	PNP-Silicon General use Transistors PNP-Silicon General use Transistors 1W 、 1.5A、 25V Applications： Can be used for switching and amplifying in various electrical and electronic circuit.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SB1123	PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1123-D	High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied	SANYO 三洋	SANYO
2SB1123-R	PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1123-S	PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1123S-TD-E	Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123S-TD-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123-T	PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1123T-TD-E	Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123T-TD-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123-U	PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1124	PNP Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SB1124	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.	SANYO 三洋	SANYO
2SB1124	PNP Epitaxial Planar Silicon Transistors ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1624	KEXIN 科信电子	KEXIN
2SB1124S	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124S-TD-E	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124S-TD-E	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124S-TD-H	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124S-TD-H	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T-TD-E	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T-TD-E	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T-TD-H	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T-TD-H	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1125	Driver Applications? Applications · Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. Features · High DC current gain. · Large current capacity and wide ASO. · Very small size making it easy to provide high density, small-sized hybrid IC’.	SANYO 三洋	SANYO
2SB1126	For Various Drivers For Various Drivers Features · High DC current gain (4000 or greater). · Large current capacity. · Very small size making it easy to provide high density, small-sized hybrid IC’s. Applications · Relay drivers, hammer drivers, lamp drivers, motor drivers,	SANYO 三洋	SANYO
2SB1127	20V/5A Swtching Applications PNP Epiaxial Plannar Silicon Transisor 20V / 5A Switching Applicaions Features Adoption of FBET, MBIT processes Low saturation voltage Large current capacity Fast switching speed Applications Strobe, power, supplies, relay, relay drivers, lamp drivers	SANYO 三洋	SANYO
2SB1121	High-Current Driver Applications 文件：93.48 Kbytes Page：4 Pages	SANYO 三洋	SANYO
2SB1121	High-Current Driver Applications 文件：106.21 Kbytes Page：4 Pages	SANYO 三洋	SANYO
2SB1121	双极晶体管，-25V，-2A，低饱和压，PNP 单 PCP	ONSEMI 安森美半导体	ONSEMI
2SB1121_11	High-Current Driver Applications 文件：106.21 Kbytes Page：4 Pages	SANYO 三洋	SANYO
2SB1121_15	PNP Transistors 文件：1.44488 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1121-R	PNP Transistors 文件：1.44488 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1121-S	PNP Transistors 文件：1.44488 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1121S-TD-E	High-Current Driver Applications 文件：93.48 Kbytes Page：4 Pages	SANYO 三洋	SANYO
2SB1121-T	PNP Transistors 文件：1.44488 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN

2SB112产品属性

类型
描述
型号
2SB112
制造商
KEXIN
制造商全称
Guangdong Kexin Industrial Co.,Ltd
功能描述
PNP Epitaxial Planar Silicon Transistors

2SB112供应商更多...

更新时间：2025-12-25 19:12:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市粤骏腾电子科技有限公司	2SB1123S-TD-E	ON/安森美	24+	TO-243	10000	十年沉淀唯有原装	询价
深圳市科达星科技有限公司	2SB1123	ROHM	24+	SOT-89	96000	公司大量原装现货,欢迎来电	询价
深圳市高捷芯城科技有限公司	2SB1123T-TD-E	onsemi(安森美)	24+	SOT-89	1612	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市富芯乐电子科技有限公司	2SB1123T	SANYO	24+	SOT-89	5500	只做原装正品现货欢迎来电查询15919825718	询价
深圳市赛美科科技有限公司	2SB1123T-TD-E	SANYO		SOT-89	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市昌和盛利电子有限公司	2SB1123	ROHM	NEW	SOT-89	11092	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市卓越微芯电子有限公司	2SB1123T-TD-E	SANYO	25+	SOT-89	3000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市益百分电子有限公司	2SB1123T-TD-E	SANYO	00+	SOT89	1200	全新原装进口自己库存优势	询价
深圳市拓亿芯电子有限公司	2SB1123B-TD	SANYO	25+	SOT89	30000	代理全新原装现货,价格优势	询价
中天科工半导体（深圳）有限公司	2SB1123S-TD-E	ON/安森美	25+	SOT-89	32000	ON/安森美全新特价2SB1123S-TD-E即刻询购立享优惠#长期有货	询价

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2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

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2SB112晶体管资料

2SB112价格

2SB112产品属性

2SB112供应商更多...

2SB112芯片相关品牌

2SB112规格书下载地址

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2SA928AL-TO92NLB-Y-TG

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2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引