2SB1124S-TD-E晶体三极管技术资料参数库存现货价格-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料 > 2SB112

2SB112晶体管资料

2SB112别名：2SB112三极管、2SB112晶体管、2SB112晶体三极管
2SB112生产厂家：日本日电公司
2SB112制作材料：Ge-PNP
2SB112性质：低频或音频放大（LF）
2SB112封装形式：直插封装
2SB112极限工作电压：25V
2SB112最大电流允许值：0.05A
2SB112最大工作频率：<1MHZ或未知
2SB112引脚数：3
2SB112最大耗散功率：0.1W
2SB112放大倍数：β>43
2SB112图片代号：C-47
2SB112vtest：25
2SB112htest：999900
2SB112atest：0.05
2SB112wtest：0.1

2SB112代换 2SB112用什么型号代替：AC125,AC126,AC151,2SB54,2SB56,

2SB112价格

参考价格：￥0.8150

型号：2SB1121T-TD-E 品牌：ON 备注：这里有2SB112多少钱，2026年最近7天走势，今日出价，今日竞价，2SB112批发/采购报价，2SB112行情走势销售排行榜，2SB112报价。

型号	功能描述	生产厂家企业	LOGO
2SB1124S-TD-E	丝印代码：2SB1124；High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SB1124S-TD-H	丝印代码：2SB1124；High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SB1124T-TD-E	丝印代码：2SB1124；High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SB1124T-TD-H	丝印代码：2SB1124；High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SD1624S-TD-E	丝印代码：2SB1124；High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages	SANYO 三洋	SANYO
2SB1120	High-Current Driver Applications Features • Low collector-to-emitter saturation voltage : VCE(sat)max=–0.45V. • Large current capacity : IC=–2.5A, ICP=–5A. • Very small size making it easy to provide high density, small-sized hybrid IC’s. Applications • Strobes, voltage regulators, relay drivers, lamp drivers.	SANYO 三洋	SANYO
2SB1120	PNP Epitaxial Planar Silicon Transistors Features ● Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. ● Large current capacity : IC=-2.5A, ICP=-5A. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s.	KEXIN 科信电子	KEXIN
2SB1120_15	PNP Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.	KEXIN 科信电子	KEXIN
2SB1120-E	PNP Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.	KEXIN 科信电子	KEXIN
2SB1120-F	PNP Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.	KEXIN 科信电子	KEXIN
2SB1120-G	PNP Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.	KEXIN 科信电子	KEXIN
2SB1121	PNP Epitaxial Planar Silicon Transistors ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1621	KEXIN 科信电子	KEXIN
2SB1121	High-Current Driver Applications? Features ¥ Adoption of FBET, MBIT processes. ¥ Low collector-to-emitter saturation voltage. ¥ Large current capacity and wide ASO. ¥ Fast switching speed. ¥ Ultrasmall size making it easy to provide high-density, small-sized hybrid ICÕs. Applications ¥ Voltage regulators, relay drivers, lam	SANYO 三洋	SANYO
2SB1121	Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity and wide SOA • Low collector to emitter saturation voltage • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applications • Voltage regulators, relay drivers, lamp dri	ONSEMI 安森美半导体	ONSEMI
2SB1121	双极晶体管，-25V，-2A，低饱和压，PNP 单 PCP 2SB1121 is Bipolar Transistor, -25V, -2A, Low VCE(sat) PNP Single PCP. • Adoption of FBET, MBIT processes\n• Low collector-to-emitter saturation voltage\n• Large current capacity and wide ASO\n• Fast switching speed\n• Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s;	ONSEMI 安森美半导体	ONSEMI
2SB1121S-TD-E	Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity and wide SOA • Low collector to emitter saturation voltage • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applications • Voltage regulators, relay drivers, lamp dri	ONSEMI 安森美半导体	ONSEMI
2SB1121T-TD-E	Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity and wide SOA • Low collector to emitter saturation voltage • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applications • Voltage regulators, relay drivers, lamp dri	ONSEMI 安森美半导体	ONSEMI
2SB1122	Bipolar Transistor -50V, -1A, Low VCE(sat) PNP Single PCP Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET process • Ultrasmall size making it easy to provide high-density hybrid IC’s Applicaitons • Voltage regulators relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SB1122	Low-Frequency Power Amp Applications? Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment.	SANYO 三洋	SANYO
2SB1122	PNP Epitaxial Planar Silicon Transistors ■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Complementary to 2SD1622	KEXIN 科信电子	KEXIN
2SB1122	双极晶体管，-50V，-1A，低饱和压，PNP 单 PCP The 2SB1122 is Bipolar Transistor, -50V, -1A, Low VCE(sat) PNP Single PCP for low-frequency power amplifier applications. • Adoption of FBET processes\n• Ultrasmall size making it easy to provide high-density hybrid ICs;	ONSEMI 安森美半导体	ONSEMI
2SB1122-D	Low-Frequency Power Amplifier Applications Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment.	SANYO 三洋	SANYO
2SB1122S-TD-E	Bipolar Transistor -50V, -1A, Low VCE(sat) PNP Single PCP Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET process • Ultrasmall size making it easy to provide high-density hybrid IC’s Applicaitons • Voltage regulators relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SB1122T-TD-E	Bipolar Transistor -50V, -1A, Low VCE(sat) PNP Single PCP Bipolar Transistor –50V, –1A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET process • Ultrasmall size making it easy to provide high-density hybrid IC’s Applicaitons • Voltage regulators relay drivers, lamp drivers, electrical equipment	ONSEMI 安森美半导体	ONSEMI
2SB1123	PNP-Silicon General use Transistors PNP-Silicon General use Transistors 1W 、 1.5A、 25V Applications： Can be used for switching and amplifying in various electrical and electronic circuit.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SB1123	High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	KEXIN 科信电子	KEXIN
2SB1123	High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied	SANYO 三洋	SANYO
2SB1123	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123	High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied	SANYO 三洋	SANYO
2SB1123	Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123	PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1123-D	High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied	SANYO 三洋	SANYO
2SB1123-R	丝印代码：BFR*；PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1123-S	丝印代码：BFS*；PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1123S-TD-E	Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123S-TD-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123-T	丝印代码：BFT*；PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1123T-TD-E	Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123T-TD-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons •	ONSEMI 安森美半导体	ONSEMI
2SB1123-U	丝印代码：BFU*；PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623	YFWDIODE 佑风微	YFWDIODE
2SB1124	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124	High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.	SANYO 三洋	SANYO
2SB1124	PNP Epitaxial Planar Silicon Transistors ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1624	KEXIN 科信电子	KEXIN
2SB1124	丝印代码：BG；PNP Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SB1124S	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124S-TD-E	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124S-TD-E	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124S-TD-H	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124S-TD-H	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T-TD-E	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T-TD-E	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T-TD-H	Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1124T-TD-H	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri	ONSEMI 安森美半导体	ONSEMI
2SB1125	Driver Applications? Applications · Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. Features · High DC current gain. · Large current capacity and wide ASO. · Very small size making it easy to provide high density, small-sized hybrid IC’.	SANYO 三洋	SANYO
2SB1126	For Various Drivers For Various Drivers Features · High DC current gain (4000 or greater). · Large current capacity. · Very small size making it easy to provide high density, small-sized hybrid IC’s. Applications · Relay drivers, hammer drivers, lamp drivers, motor drivers,	SANYO 三洋	SANYO
2SB1127	20V/5A Swtching Applications PNP Epiaxial Plannar Silicon Transisor 20V / 5A Switching Applicaions Features Adoption of FBET, MBIT processes Low saturation voltage Large current capacity Fast switching speed Applications Strobe, power, supplies, relay, relay drivers, lamp drivers	SANYO 三洋	SANYO
2SB1121	High-Current Driver Applications 文件：106.21 Kbytes Page：4 Pages	SANYO 三洋	SANYO
2SB1121	High-Current Driver Applications 文件：93.48 Kbytes Page：4 Pages	SANYO 三洋	SANYO

2SB112产品属性

类型
描述
Pb-free：
Pb
Status：
Active
Polarity：
PNP
Type：
Low VCE(sat)
VCE(sat) Max (V)：
0.6
IC Cont. (A)：
2
VCEO Min (V)：
25
VCBO (V)：
30
VEBO (V)：
6
VBE(sat) (V)：
0.85
hFE Min：
140
hFE Max：
280
fT Min (MHz)：
150
PTM Max (W)：
1.3
Package Type：
SOT-89/PCP-1

2SB112供应商更多...

更新时间：2026-5-14 18:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	2SB1124S-TD-E	ON/安森美	2450+	SOT-89	9850	只做原装正品现货或订货假一赔十!	询价
深圳市华斯顿科技有限公司	2SB1124S-TD-E	Sanyo	25+23+	SOT-89	32484	绝对原装正品全新进口深圳现货	询价
深圳市科芯源微电子有限公司	2SB1124S-TD-E	ON/安森美	23+	SOT-89	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市一线半导体有限公司	2SB1124S-TD-E	SANYO	24+	SOT-89	70400	新进库存/原装	询价
深圳市创新迹电子有限公司	2SB1124S-TD-E	ON	22+		20000	公司只有原装品质保证	询价
深圳市盈慧通电子有限公司	2SB1124S-TD-E	ONSEMI/安森美	2511	SOT-89	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
洪芯国际半导体（深圳）有限公司	2SB1124S-TD-E	SANYO/三洋	26+	SOP16	86720	全新原装正品价格最实惠假一赔百	询价
深圳市赛美科科技有限公司	2SB1124S-TD-E	SANYO		SOT-89	9500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市富芯乐电子科技有限公司	2SB1124S-TD-E	SANYO	24+	SOT-89	3200	只做原装正品现货欢迎来电查询15919825718	询价
深圳市纳立科技有限公司	2SB1124S-TD-EX		三年内		1983	只做原装正品	询价

2SB112芯片相关品牌

2SB112规格书下载地址

2SB112参数引脚图相关

2SB112数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-14
2SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-1
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-30
2SB649 MOS
www.jskj-ic.com
2021-9-10
2SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109

找IC，尽在114IC

2SB112晶体管资料

2SB112价格

2SB112产品属性

2SB112供应商更多...

2SB112芯片相关品牌

2SB112规格书下载地址

2SB112参数引脚图相关

2SB112数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引