PNP Transistors

■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.

High-Current Driver Applications

Features • Low collector-to-emitter saturation voltage : VCE(sat)max=–0.45V. • Large current capacity : IC=–2.5A, ICP=–5A. • Very small size making it easy to provide high density, small-sized hybrid IC’s. Applications • Strobes, voltage regulators, relay drivers, lamp drivers.

PNP Epitaxial Planar Silicon Transistors

Features ● Low collector-to-emitter saturation voltage : VCE(sat)max=-0.45V. ● Large current capacity : IC=-2.5A, ICP=-5A. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s.

PNP Transistors

■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.

PNP Transistors

■ Features ● Very small size making it easy to provide high highdensity, small-sized hybrid IC’s. ● Low collector-to-emitter saturation voltage ● Large current capacity : IC=–2.5A, ICP=–5A.