位置：首页 > IC中文资料第268页 > 2SB1121S-TD-E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1121S-TD-E | Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity and wide SOA • Low collector to emitter saturation voltage • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applications • Voltage regulators, relay drivers, lamp dri | ONSEMI 安森美半导体 |   | |
2SB1121S-TD-E | High-Current Driver Applications 文件：93.48 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | |
2SB1121S-TD-E | 封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 25V 2A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
Bipolar Transistor -25V, -2A, Low VCE(sat) PNP Single PCP Features • Adoption of FBET, MBIT processes • Large current capacity and wide SOA • Low collector to emitter saturation voltage • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Applications • Voltage regulators, relay drivers, lamp dri | ONSEMI 安森美半导体 | | ||
High-Current Driver Applications? Features ¥ Adoption of FBET, MBIT processes. ¥ Low collector-to-emitter saturation voltage. ¥ Large current capacity and wide ASO. ¥ Fast switching speed. ¥ Ultrasmall size making it easy to provide high-density, small-sized hybrid ICÕs. Applications ¥ Voltage regulators, relay drivers, lam | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
PNP Epitaxial Planar Silicon Transistors ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1621 | KEXIN 科信电子 | | ||
High-Current Driver Applications 文件：106.21 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
High-Current Driver Applications 文件：93.48 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |
2SB1121S-TD-E产品属性
- 类型
描述
- 型号
2SB1121S-TD-E
- 功能描述
两极晶体管 - BJT BIP PNP 2A 25V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
SOT-89 |
14158 |
国产南科平替供应大量 |
|||
SANYO/三洋 |
24+ |
SOT-89 |
60000 |
全新原装现货 |
|||
SANYO/三洋 |
1942+ |
SOT-89 |
9852 |
只做原装正品现货或订货!假一赔十! |
|||
SANYO/三洋 |
22+ |
SOT-89 |
34482 |
原装正品现货 |
|||
ONSEMI/安森美 |
2511 |
SOT-89 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ON/安森美 |
25+ |
SOT89 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON/安森美 |
25+ |
SOT89 |
32000 |
ON/安森美全新特价2SB1121S-TD-E即刻询购立享优惠#长期有货 |
|||
ON |
21+ |
42664 |
12588 |
原装正品假一罚十 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO/三洋 |
20+ |
SOT-89 |
57600 |
现货很近!原厂很远!只做原装 |
2SB1121S-TD-E规格书下载地址
2SB1121S-TD-E参数引脚图相关
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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