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2SB1124晶体管资料
2SB1124别名：2SB1124三极管、2SB1124晶体管、2SB1124晶体三极管
2SB1124生产厂家：日本三洋公司
2SB1124制作材料：Si-PNP
2SB1124性质：表面帖装型 （SMD）_开关管 （S）
2SB1124封装形式：直插封装
2SB1124极限工作电压：60V
2SB1124最大电流允许值：3A
2SB1124最大工作频率：150MHZ
2SB1124引脚数：3
2SB1124最大耗散功率：
2SB1124放大倍数：
2SB1124图片代号：H-100
2SB1124vtest：60
2SB1124htest：150000000
- 2SB1124atest：3
2SB1124wtest：0
2SB1124代换 2SB1124用什么型号代替：2SA1213,2SA1736,2SB1572,
2SB1124价格
参考价格：￥1.0114
型号：2SB1124S-TD-E 品牌：ON 备注：这里有2SB1124多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1124批发/采购报价，2SB1124行情走势销售排行榜，2SB1124报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1124 | High-Current Switching Applications High Current Switching Applications Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |   | |
2SB1124 | PNP Epitaxial Planar Silicon Transistors ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1624 | KEXIN 科信电子 | | |
2SB1124 | Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | |
2SB1124 | PNP Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Fast switching speed. • Large current capacity and wide ASO. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
2SB1124 | Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | |
2SB1124 | High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | |
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Fast switching speed • Large current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electri | ONSEMI 安森美半导体 | | ||
PNP Transistors 文件：1.602 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.602 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.602 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
Bipolar Transistor 文件：355.64 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 3A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：355.64 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
PNP Transistors 文件：1.602 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 3A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
Bipolar Transistor 文件：355.64 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：355.64 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
High Current Switching Applications 文件：458.08 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
PNP Transistors 文件：1.602 Mbytes Page：3 Pages | KEXIN 科信电子 | |
2SB1124产品属性
- 类型
描述
- 型号
2SB1124
- 制造商
KEXIN
- 制造商全称
Guangdong Kexin Industrial Co.,Ltd
- 功能描述
PNP Epitaxial Planar Silicon Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-89 |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
SANYO/三洋 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SANYO |
23+ |
SOT89 |
20000 |
全新原装假一赔十 |
|||
N/A |
25+ |
LF |
880000 |
明嘉莱只做原装正品现货 |
|||
SANYO/三洋 |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON/安森美 |
23+ |
SOT-89 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ON |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
SANYO |
06PB |
SOT89 |
2550 |
全新原装进口自己库存优势 |
|||
SANYO |
24+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
ON SEMICONDUCTOR |
11+ |
SOT89 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SB1124规格书下载地址
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2SB1124数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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