2SB1123晶体管资料
2SB1123别名：2SB1123三极管、2SB1123晶体管、2SB1123晶体三极管
2SB1123生产厂家：日本三洋公司
2SB1123制作材料：Si-PNP
2SB1123性质：表面帖装型 （SMD）_开关管 （S）
2SB1123封装形式：直插封装
2SB1123极限工作电压：60V
2SB1123最大电流允许值：2A
2SB1123最大工作频率：150MHZ
2SB1123引脚数：3
2SB1123最大耗散功率：
2SB1123放大倍数：
2SB1123图片代号：H-100
2SB1123vtest：60
2SB1123htest：150000000
- 2SB1123atest：2
2SB1123wtest：0
2SB1123代换 2SB1123用什么型号代替：2SA1213,2SA1417,2SA1681,2SB1029,2SB1520,
2SB1123价格
参考价格：￥0.8077
型号：2SB1123S-TD-E 品牌：ON 备注：这里有2SB1123多少钱，2026年最近7天走势，今日出价，今日竞价，2SB1123批发/采购报价，2SB1123行情走势销售排行榜，2SB1123报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1123 | Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 |   | |
2SB1123 | High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied | SANYO 三洋 | | |
2SB1123 | Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | | |
2SB1123 | High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied | SANYO 三洋 | | |
2SB1123 | High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623 | KEXIN 科信电子 | | |
2SB1123 | PNP-Silicon General use Transistors PNP-Silicon General use Transistors 1W 、 1.5A、 25V Applications： Can be used for switching and amplifying in various electrical and electronic circuit. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
2SB1123 | PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623 | YFWDIODE 佑风微 | | |
2SB1123 | 双极晶体管，-50V，-2A，低饱和压，(PNP)NPN 单 PCP 2SB1123 is a Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single PCP for High-Current Switching Applications. • Adoption of FBET, MBIT processes\n• Low collector-to-emitter saturation voltage\n• Large current capacity and wide ASO\n• Fast switching speed\n• The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid ICs furtherminiaturization; | ONSEMI 安森美半导体 | | |
2SB1123 | High-Current Switching Applications 文件：105 Kbytes Page：5 Pages | SANYO 三洋 | | |
High-Current Switching Applications PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied | SANYO 三洋 | | ||
丝印代码：BFR*；PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623 | YFWDIODE 佑风微 | | ||
丝印代码：BFS*；PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623 | YFWDIODE 佑风微 | | ||
Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | | ||
丝印代码：BFT*；PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623 | YFWDIODE 佑风微 | | ||
Bipolar Transistor (??50V, (??2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET, MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity and wide ASO • Fast switching speed • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization Applicaitons • | ONSEMI 安森美半导体 | | ||
丝印代码：BFU*；PNP Transistor ■ Features ● Low collector-to-emitter saturation voltage. ● Large current capacity and wide ASO. ● Fast switching speed. ● Complementary to 2SD1623 | YFWDIODE 佑风微 | | ||
High-Current Switching Applications 文件：105 Kbytes Page：5 Pages | SANYO 三洋 | | ||
PNP Transistors 文件：1.16269 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.16269 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：1.16269 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 2A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
PNP Transistors 文件：1.16269 Mbytes Page：3 Pages | KEXIN 科信电子 | | ||
封装/外壳：TO-243AA 包装：散装 描述：TRANS PNP 50V 2A SOT89-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
PNP Transistors 文件：1.16269 Mbytes Page：3 Pages | KEXIN 科信电子 | |
2SB1123产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Polarity：
PNP
- Type：
Low VCE(sat)
- VCE(sat) Max (V)：
0.7
- IC Cont. (A)：
2
- VCEO Min (V)：
50
- VCBO (V)：
60
- VEBO (V)：
6
- VBE(sat) (V)：
0.9
- hFE Min：
140
- hFE Max：
280
- fT Min (MHz)：
150
- PTM Max (W)：
0.5
- Package Type：
SOT-89/PCP-1
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-89 |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
SANYO |
2016+ |
SOT89 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SANYO |
23+ |
SOT89 |
20000 |
全新原装假一赔十 |
|||
ON/安森美 |
23+ |
SOT-89 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ON/安森美 |
25+ |
SOT-89 |
32000 |
ON/安森美全新特价2SB1123S-TD-E即刻询购立享优惠#长期有货 |
|||
24+ |
SO-89 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
SANYO |
24+ |
SOT-89 |
5500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
SANYO |
SOT-89 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NEC |
2223+ |
SOT-89 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
2SB1123规格书下载地址
2SB1123参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 3q1
- 3g汽车
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- 2sc4226
- 2SB1151
- 2SB1150
- 2SB1149
- 2SB1148
- 2SB1145
- 2SB1144
- 2SB1143
- 2SB1142
- 2SB1141
- 2SB1140
- 2SB114
- 2SB1137
- 2SB1136
- 2SB1135
- 2SB1134
- 2SB1133
- 2SB1132
- 2SB1131
- 2SB1130A(M)
- 2SB1130(M)
- 2SB113
- 2SB1129
- 2SB1128
- 2SB1127
- 2SB1126
- 2SB1125
- 2SB1124
- 2SB1122
- 2SB1121
- 2SB1120
- 2SB112
- 2SB1119
- 2SB1118
- 2SB1117
- 2SB1116A
- 2SB1116
- 2SB1115A
- 2SB1115
- 2SB1114
- 2SB1113
- 2SB1112
- 2SB1111
- 2SB1110
- 2SB111
- 2SB1109
- 2SB1108
- 2SB1107
- 2SB1106
- 2SB1105
- 2SB1103
- 2SB1102
- 2SB1101
- 2SB1100
- 2SB1098
2SB1123数据表相关新闻
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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