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2SA733晶体管资料
2SA733别名：2SA733三极管、2SA733晶体管、2SA733晶体三极管
2SA733生产厂家：日本日电公司
2SA733制作材料：Si-PNP
2SA733性质：通用型 （Uni）
2SA733封装形式：直插封装
2SA733极限工作电压：60V
2SA733最大电流允许值：0.1A
2SA733最大工作频率：180MHZ
2SA733引脚数：3
2SA733最大耗散功率：0.25W
2SA733放大倍数：
2SA733图片代号：A-20
2SA733vtest：60
2SA733htest：180000000
- 2SA733atest：0.1
2SA733wtest：0.25
2SA733代换 2SA733用什么型号代替：BC177,BC204,BC212,BC213,BC251,BC257,BC307,BC513,BC557,3CG120C,3CG4312,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SA733 | PNP SILICON TRANSISTOR DESCRIPTION The 2SA733 is designed for use in driver state of AF amplifier. FEATURES ● High hFE and Excellent Linearity : 200 TYP. hFE (VCE = -6.0 V, IC = -1.0 mA) | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  |   |
2SA733 | TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier applicatioms. | DCCOM Dc Components |  | |
2SA733 | TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power dissipation | DAYADaya Electric Group Co., Ltd. 大亚电器集团大亚电器集团有限公司 |  | |
2SA733 | PNP Plastic Encapsulated Transistor FEATURES • Complementary of the 2SC945 • Collector to base voltage: -60V | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | |
2SA733 | PNP EPITAXIAL PLANAR TRANSISTOR Description The 2SA733 is designed for use in driver stage of AF amplifier applications.. | TGS Tiger Electronic Co.,Ltd |  | |
2SA733 | Silicon Epitaxial Planar Transistor FEATURES ● Excellent hFE Linearity. ● Power dissipation： PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | |
2SA733 | Collector-Base Voltage: VCBO=-60V Features ● Collector-Base Voltage: VCBO=-60V | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | |
2SA733 | Collector-Base Voltage FEATURES Collector-Base Voltage Complement to C945 | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 |  | |
2SA733 | PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
2SA733 | Silicon PNP transistor in a TO-92 Plastic Package Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High hFE and excellent hFE linearity. Applications Driver stage of AF power amplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | |
2SA733 | Silicon Epitaxial Planar Transistor FEATURES ● Excellent hFE Linearity. ● Power dissipation： PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
2SA733 | PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
2SA733 | PNP SILICON TRANSISTOR DESCRIPTION The 2SA733 is designed for use in diver stage of AF amplifier. FEATURES • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature +150°C Maximum Maximum Powe | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | |
2SA733 | TO-92 Plastic-Encapsulate Transistors FEATURE Complementary to 2SC945 Excellent hFE linearity Low noise | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | |
2SA733 | TRANSISTOR 文件：192.33 Kbytes Page：3 Pages | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  | |
2SA733 | Low Frequency Amplifier PNP Epitaxial Silicon Transistor 文件：959.85 Kbytes Page：7 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd |  | |
2SA733 | LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | |
2SA733 | PNP Plastic Encapsulated Transistor 文件：420.42 Kbytes Page：2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | |
TO-92 Plastic-Encapsulate Transistors FEATURE Complementary to 2SC945 Excellent hFE linearity Low noise | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | | | |
PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | | |
Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High hFE and excellent hFE linearity. Applications Driver stage of AF power amplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | | | |
PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
PNP Plastic Encapsulated Transistor FEATURES Power dissipation PACKAGE INFORMATION Weight: 0.2100g (Approximately) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | | |
PNP Plastic Encapsulated Transistor 文件：420.42 Kbytes Page：2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
PNP Transistors 文件：1.13585 Mbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNP Transistors 文件：1.16683 Mbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
PNP Transistors 文件：1.30545 Mbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNP Transistors 文件：1.30545 Mbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
PNP Silicon Plastic-Encapsulate Transistor 文件：411.6 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
PNP Transistors 文件：1.30545 Mbytes Page：2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
PNP General Purpose Amplifier 文件：128.94 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 |  | | |
PNP Silicon Plastic-Encapsulate Transistor 文件：411.6 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PNP Silicon Plastic-Encapsulate Transistor 文件：411.6 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
PNP Silicon Plastic-Encapsulate Transistor 文件：411.6 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
PNP Silicon Plastic-Encapsulate Transistor 文件：411.6 Kbytes Page：2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
Low Frequency Amplifier PNP Epitaxial Silicon Transistor 文件：959.85 Kbytes Page：7 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | | | |
Low Frequency Amplifier PNP Epitaxial Silicon Transistor 文件：959.85 Kbytes Page：7 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | | | |
Low Frequency Amplifier PNP Epitaxial Silicon Transistor 文件：959.85 Kbytes Page：7 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | | | |
Low Frequency Amplifier PNP Epitaxial Silicon Transistor 文件：959.85 Kbytes Page：7 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | | | |
Low Frequency Amplifier PNP Epitaxial Silicon Transistor 文件：959.85 Kbytes Page：7 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件：175.57 Kbytes Page：4 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | |
2SA733产品属性
- 类型
描述
- 型号
2SA733
- 制造商
DCCOM
- 制造商全称
Dc Components
- 功能描述
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
92 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
CJ/长电 |
22+ |
SOT-23 |
999999 |
原装正品现货,可开13点税 |
|||
CJ/长电 |
24+ |
SOT-23 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
2015+ |
5000 |
公司现货库存 |
|||||
MOT |
24+ |
TO-92 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
UTC/友顺 |
25+ |
TO-92 |
55000 |
UTC/友顺2SA733L-P即刻询购立享优惠#长期有货 |
|||
TOSHIBA/东芝 |
23+ |
TO-92 |
9800 |
全新原装现货,假一赔十 |
|||
FSC |
1950+ |
TO-92 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
NEC |
22+ |
TO92 |
8000 |
原装正品支持实单 |
|||
ST先科 |
20+ |
TO-92 |
24000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SA733芯片相关品牌
2SA733规格书下载地址
2SA733参数引脚图相关
- 5000
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- 485接口
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- 2SA742(N)
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- 2SA733T
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- 2SA715F
- 2SA715
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- 2SA714
- 2SA709
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2SA733数据表相关新闻
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进口代理
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支持实单 价格优势 有单必成
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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