PNP Plastic Encapsulated Transistor

FEATURES Power dissipation PACKAGE INFORMATION Weight: 0.2100g (Approximately)

-60 V, -150 mA PNP Plastic Encapsulated Transistor

丝印代码：ST2SA433LB；Low Frequency Amplifier PNP Epitaxial Silicon Transistor

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丝印代码：ST2SA433OB；Low Frequency Amplifier PNP Epitaxial Silicon Transistor

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General Purpose Bipolar

General Purpose Bipolar

丝印代码：ST2SA433PB；Low Frequency Amplifier PNP Epitaxial Silicon Transistor

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丝印代码：ST2SA433RB；Low Frequency Amplifier PNP Epitaxial Silicon Transistor

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丝印代码：ST2SA433YB；Low Frequency Amplifier PNP Epitaxial Silicon Transistor

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PNP SILICON TRANSISTOR

DESCRIPTION The 2SA733 is designed for use in driver state of AF amplifier. FEATURES ● High hFE and Excellent Linearity : 200 TYP. hFE (VCE = -6.0 V, IC = -1.0 mA)

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier applicatioms.

PNP Plastic Encapsulated Transistor

FEATURES • Complementary of the 2SC945 • Collector to base voltage: -60V

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can