PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix

PNP Silicon Plastic-Encapsulate Transistor

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PNP SILICON TRANSISTOR

DESCRIPTION The 2SA733 is designed for use in driver state of AF amplifier. FEATURES ● High hFE and Excellent Linearity : 200 TYP. hFE (VCE = -6.0 V, IC = -1.0 mA)

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier applicatioms.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation

PNP Plastic Encapsulated Transistor

FEATURES • Complementary of the 2SC945 • Collector to base voltage: -60V

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS PNP 50V 0.1A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个