2SA73晶体管资料

  • 2SA73别名:2SA73三极管、2SA73晶体管、2SA73晶体三极管

  • 2SA73生产厂家:日本东芝公司

  • 2SA73制作材料:Ge-PNP

  • 2SA73性质:调幅 (AM)

  • 2SA73封装形式:直插封装

  • 2SA73极限工作电压:18V

  • 2SA73最大电流允许值:0.005A

  • 2SA73最大工作频率:35MHZ

  • 2SA73引脚数:3

  • 2SA73最大耗散功率

  • 2SA73放大倍数

  • 2SA73图片代号:D-58

  • 2SA73vtest:18

  • 2SA73htest:35000000

  • 2SA73atest:0.005

  • 2SA73wtest:0

  • 2SA73代换 2SA73用什么型号代替:AF124,AF125,AF126,AF200,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,

型号 功能描述 生产厂家&企业 LOGO 操作
2SA73

SOT-23Plastic-EncapsulateTransistors

文件:578.36 Kbytes Page:4 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW

SiPNPEpitaxialPlanar

SiPNPEpitaxialPlanar AFPowerAmplifierandDriver Complementarypairwith2SC1317,2SC1318,2SC1346,2SC1347

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

SiPNPEpitaxialPlanar

SiPNPEpitaxialPlanar AFPowerAmplifierandDriver Complementarypairwith2SC1317,2SC1318,2SC1346,2SC1347

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

PNPSILICONTRANSISTOR

DESCRIPTION The2SA733isdesignedforuseindriverstateofAFamplifier. FEATURES ●HighhFEandExcellentLinearity:200TYP. hFE(VCE=-6.0V,IC=-1.0mA)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description DesignedforuseindriverstageofAFamplifierapplicatioms.

DCCOM

Dc Components

DCCOM

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation

DAYADaya Electric Group Co., Ltd.

大亚电器集团大亚电器集团有限公司

DAYA

PNPPlasticEncapsulatedTransistor

FEATURES •Complementaryofthe2SC945 •Collectortobasevoltage:-60V

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

PNPEPITAXIALPLANARTRANSISTOR

Description The2SA733isdesignedforuseindriverstageofAFamplifierapplications..

TGS

Tiger Electronic Co.,Ltd

TGS

SiliconEpitaxialPlanarTransistor

FEATURES ●ExcellenthFELinearity. ●Powerdissipation:PD=250mW. ●HighhFE. APPLICATIONS ●Designedforuseindriverstageofamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

Collector-BaseVoltage:VCBO=-60V

Features ●Collector-BaseVoltage:VCBO=-60V

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

Collector-BaseVoltage

FEATURES Collector-BaseVoltage ComplementtoC945

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半导体美科半导体股份(香港)有限公司

MAKOSEMI

TO-92Plastic-EncapsulateTransistors

FEATURE Complementaryto2SC945 ExcellenthFElinearity Lownoise

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

PNPGeneralPurposeAmplifier

Features •Thisdeviceisdesignedforgeneralpurposeamplifierapplications atcollectorcurrentsto300mA. •SourcedfromProcess68.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PNPSILICONTRANSISTOR

DESCRIPTION The2SA733isdesignedforuseindiverstageofAFamplifier. FEATURES •HighhFEandExcellentLinearity:200TYP. hFE(VCE=−6.0V,IC=−1.0mA) ABSOLUTEMAXIMUMRATINGS MaximumTemperature StorageTemperature−55to+150°C JunctionTemperature+150°CMaximum MaximumPowe

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofivegroups,R,O,Y, PandL,accordingtoitsDCcurrentgain.As complementarytypetheNPNtransistorST2SC945 isrecommended. Onspecialrequest,thesetransistorscan

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features HighhFEandexcellenthFElinearity. Applications DriverstageofAFpoweramplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconEpitaxialPlanarTransistor

FEATURES ●ExcellenthFELinearity. ●Powerdissipation:PD=250mW. ●HighhFE. APPLICATIONS ●Designedforuseindriverstageofamplifier.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG

TO-92Plastic-EncapsulateTransistors

FEATURE Complementaryto2SC945 ExcellenthFElinearity Lownoise

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

PNPSiliconPlastic-EncapsulateTransistor

Features •Capableof0.25WattsofPowerDissipation. •Collector-current0.1A •Collector-baseVoltage60V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features HighhFEandexcellenthFElinearity. Applications DriverstageofAFpoweramplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

PNPGeneralPurposeAmplifier

Features •Thisdeviceisdesignedforgeneralpurposeamplifierapplications atcollectorcurrentsto300mA. •SourcedfromProcess68.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PNPSiliconPlastic-EncapsulateTransistor

Features •Capableof0.25WattsofPowerDissipation. •Collector-current0.1A •Collector-baseVoltage60V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPSiliconPlastic-EncapsulateTransistor

Features •Capableof0.25WattsofPowerDissipation. •Collector-current0.1A •Collector-baseVoltage60V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPSiliconPlastic-EncapsulateTransistor

Features •Capableof0.25WattsofPowerDissipation. •Collector-current0.1A •Collector-baseVoltage60V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPPlasticEncapsulatedTransistor

FEATURES Powerdissipation PACKAGEINFORMATION Weight:0.2100g(Approximately)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •Complementtotype2SC1368 APPLICATIONS •Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •Complementtotype2SC1368 APPLICATIONS •Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •Highcurrent •Complementtotype2SC1368 APPLICATIONS •Driverstagesinhigh-fidelityamplifiersandtelevisioncircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-V(BR)CEo=-25V(Min) •GoodLinearityofhFE •ComplementtoType2SC1368 APPLICATIONS •Designedforuseasdriverstagesinhigh-fidelityamplifiersandTVcircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

LowFrequencyAmplifierPNPEpitaxialSiliconTransistor

文件:959.85 Kbytes Page:7 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PNPPlasticEncapsulatedTransistor

文件:420.42 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PNPPlasticEncapsulatedTransistor

文件:420.42 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

PNPTransistors

文件:1.13585 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.16683 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PNPTransistors

文件:1.30545 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.30545 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPSiliconPlastic-EncapsulateTransistor

文件:411.6 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPTransistors

文件:1.30545 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

LOWFREQUENCYAMPLIFIERPNPEPITAXIALSILICONTRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

PNPGeneralPurposeAmplifier

文件:128.94 Kbytes Page:4 Pages

DIODESDiodes Incorporated

美台半导体

DIODES

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PNPSiliconPlastic-EncapsulateTransistor

文件:411.6 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PNPSiliconPlastic-EncapsulateTransistor

文件:411.6 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPSiliconPlastic-EncapsulateTransistor

文件:411.6 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPSiliconPlastic-EncapsulateTransistor

文件:411.6 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

LowFrequencyAmplifierPNPEpitaxialSiliconTransistor

文件:959.85 Kbytes Page:7 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER

LowFrequencyAmplifierPNPEpitaxialSiliconTransistor

文件:959.85 Kbytes Page:7 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER

LowFrequencyAmplifierPNPEpitaxialSiliconTransistor

文件:959.85 Kbytes Page:7 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER

LowFrequencyAmplifierPNPEpitaxialSiliconTransistor

文件:959.85 Kbytes Page:7 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER

2SA73产品属性

  • 类型

    描述

  • 型号

    2SA73

  • 功能描述

    Si PNP Epitaxial Planar

更新时间:2025-6-22 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
TO-126
50000
全新原装正品现货,支持订货
CJ
17+
SOT-23
5753
全新原装正品s
NEC
24+
TO-92
5000
只做原装正品现货 欢迎来电查询15919825718
CJ/长电
24+
SOT-23
9000
只做原装,欢迎询价,量大价优
NEC
22+
TO-92
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
NEC
25+
TO92
54648
百分百原装现货 实单必成 欢迎询价
ST(先科)
24+
TO-92
10000
只做原装现货 假一赔万
CJ/长电
2021+
SOT-23
9000
原装现货,随时欢迎询价
ST(先科)
24+
con
35960
查现货到京北通宇商城
HITACHI/日立
23+
TO 126
33888
原厂授权代理,海外优势订货渠道。可提供大量库存,详

2SA73芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • IDT
  • LORLIN
  • LUGUANG
  • MOLEX4
  • NEC
  • SILABS
  • SOURIAU
  • SUPERWORLD

2SA73数据表相关新闻