2SA73晶体管资料

  • 2SA73别名:2SA73三极管、2SA73晶体管、2SA73晶体三极管

  • 2SA73生产厂家:日本东芝公司

  • 2SA73制作材料:Ge-PNP

  • 2SA73性质:调幅 (AM)

  • 2SA73封装形式:直插封装

  • 2SA73极限工作电压:18V

  • 2SA73最大电流允许值:0.005A

  • 2SA73最大工作频率:35MHZ

  • 2SA73引脚数:3

  • 2SA73最大耗散功率

  • 2SA73放大倍数

  • 2SA73图片代号:D-58

  • 2SA73vtest:18

  • 2SA73htest:35000000

  • 2SA73atest:0.005

  • 2SA73wtest:0

  • 2SA73代换 2SA73用什么型号代替:AF124,AF125,AF126,AF200,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,

型号 功能描述 生产厂家 企业 LOGO 操作
2SA73

SOT-23 Plastic-Encapsulate Transistors

文件:578.36 Kbytes Page:4 Pages

UMW

友台半导体

Si PNP Epitaxial Planar

Si PNP Epitaxial Planar AF Power Amplifier and Driver Complementary pair with 2SC1317, 2SC1318, 2SC1346, 2SC1347

ETCList of Unclassifed Manufacturers

未分类制造商

Si PNP Epitaxial Planar

Si PNP Epitaxial Planar AF Power Amplifier and Driver Complementary pair with 2SC1317, 2SC1318, 2SC1346, 2SC1347

ETCList of Unclassifed Manufacturers

未分类制造商

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA733 is designed for use in diver stage of AF amplifier. FEATURES • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature +150°C Maximum Maximum Powe

RENESAS

瑞萨

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE Linearity. ● Power dissipation: PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier.

BILIN

银河微电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation

DAYA

大亚电器

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier applicatioms.

DCCOM

道全

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA733 is designed for use in driver state of AF amplifier. FEATURES ● High hFE and Excellent Linearity : 200 TYP. hFE (VCE = -6.0 V, IC = -1.0 mA)

NEC

瑞萨

PNP General Purpose Amplifier

Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68.

Fairchild

仙童半导体

TO-92 Plastic-Encapsulate Transistors

FEATURE Complementary to 2SC945 Excellent hFE linearity Low noise

DGNJDZ

南晶电子

Collector-Base Voltage

FEATURES Collector-Base Voltage Complement to C945

MAKOSEMI

美科半导体

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High hFE and excellent hFE linearity. Applications Driver stage of AF power amplifier.

FOSHAN

蓝箭电子

Collector-Base Voltage: VCBO=-60V

Features ● Collector-Base Voltage: VCBO=-60V

KEXIN

科信电子

PNP Plastic Encapsulated Transistor

FEATURES • Complementary of the 2SC945 • Collector to base voltage: -60V

SECOS

喜可士

PNP EPITAXIAL PLANAR TRANSISTOR

Description The 2SA733 is designed for use in driver stage of AF amplifier applications..

TGS

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE Linearity. ● Power dissipation: PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier.

LUGUANG

鲁光电子

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can

DGNJDZ

南晶电子

TO-92 Plastic-Encapsulate Transistors

FEATURE Complementary to 2SC945 Excellent hFE linearity Low noise

DGNJDZ

南晶电子

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix

MCC

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High hFE and excellent hFE linearity. Applications Driver stage of AF power amplifier.

FOSHAN

蓝箭电子

PNP General Purpose Amplifier

Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68.

Fairchild

仙童半导体

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix

MCC

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix

MCC

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix

MCC

PNP Plastic Encapsulated Transistor

FEATURES Power dissipation PACKAGE INFORMATION Weight: 0.2100g (Approximately)

SECOS

喜可士

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type 2SC1368 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type 2SC1368 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- V(BR)CEo= -25V (Min) • Good Linearity of hFE • Complement to Type 2SC1368 APPLICATIONS • Designed for use as driver stages in high-fidelity amplifiers and TV circuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type 2SC1368 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

SAVANTIC

Low Frequency Amplifier PNP Epitaxial Silicon Transistor

文件:959.85 Kbytes Page:7 Pages

FUTUREWAFER

50V,0.1A,General Purpose PNP Bipolar Transistor

GALAXY

银河微电

小信号晶体管

STMICROELECTRONICS

意法半导体

Bipolar Transistor

UTC

友顺

PNP Plastic Encapsulated Transistor

文件:420.42 Kbytes Page:2 Pages

SECOS

喜可士

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

PNP Plastic Encapsulated Transistor

文件:420.42 Kbytes Page:2 Pages

SECOS

喜可士

PNP Transistors

文件:1.13585 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.16683 Mbytes Page:2 Pages

KEXIN

科信电子

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

PNP Transistors

文件:1.30545 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.30545 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

PNP Transistors

文件:1.30545 Mbytes Page:2 Pages

KEXIN

科信电子

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

PNP General Purpose Amplifier

文件:128.94 Kbytes Page:4 Pages

DIODES

美台半导体

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

Low Frequency Amplifier PNP Epitaxial Silicon Transistor

文件:959.85 Kbytes Page:7 Pages

FUTUREWAFER

2SA73产品属性

  • 类型

    描述

  • 型号

    2SA73

  • 功能描述

    Si PNP Epitaxial Planar

更新时间:2025-12-25 11:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UMW 友台
23+
SOT-23-3
6000
原装正品,实单请联系
ST
2511
CAN to-39
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
25+
CAN to-39
16900
原装,请咨询
CJ/长电
23+
SOT-23
4671177
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
PHI
25+
92
2987
只售原装自家现货!诚信经营!欢迎来电
NEC
TO-92
8553
一级代理 原装正品假一罚十价格优势长期供货
ST
23+
CAN to-39
16900
正规渠道,只有原装!
UMW(友台半导体)
2447
SOT-23-3
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
FSC
1922+
TO-92
6896
原装进口现货库存专业工厂研究所配单供货

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