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2SA73晶体管资料
2SA73别名:2SA73三极管、2SA73晶体管、2SA73晶体三极管
2SA73生产厂家:日本东芝公司
2SA73制作材料:Ge-PNP
2SA73性质:调幅 (AM)
2SA73封装形式:直插封装
2SA73极限工作电压:18V
2SA73最大电流允许值:0.005A
2SA73最大工作频率:35MHZ
2SA73引脚数:3
2SA73最大耗散功率:
2SA73放大倍数:
2SA73图片代号:D-58
2SA73vtest:18
2SA73htest:35000000
- 2SA73atest:0.005
2SA73wtest:0
2SA73代换 2SA73用什么型号代替:AF124,AF125,AF126,AF200,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SA73 | SOT-23 Plastic-Encapsulate Transistors 文件:578.36 Kbytes Page:4 Pages | UMW 友台半导体 | ||
Si PNP Epitaxial Planar Si PNP Epitaxial Planar AF Power Amplifier and Driver Complementary pair with 2SC1317, 2SC1318, 2SC1346, 2SC1347 | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Si PNP Epitaxial Planar Si PNP Epitaxial Planar AF Power Amplifier and Driver Complementary pair with 2SC1317, 2SC1318, 2SC1346, 2SC1347 | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Collector-Base Voltage: VCBO=-60V Features ● Collector-Base Voltage: VCBO=-60V | KEXIN 科信电子 | |||
PNP Plastic Encapsulated Transistor FEATURES • Complementary of the 2SC945 • Collector to base voltage: -60V | SECOS 喜可士 | |||
TO-92 Plastic-Encapsulate Transistors FEATURE Complementary to 2SC945 Excellent hFE linearity Low noise | DGNJDZ 南晶电子 | |||
Collector-Base Voltage FEATURES Collector-Base Voltage Complement to C945 | MAKOSEMI 美科半导体 | |||
PNP EPITAXIAL PLANAR TRANSISTOR Description The 2SA733 is designed for use in driver stage of AF amplifier applications.. | TGS | |||
Silicon Epitaxial Planar Transistor FEATURES ● Excellent hFE Linearity. ● Power dissipation: PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier. | LUGUANG 鲁光电子 | |||
PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can | DGNJDZ 南晶电子 | |||
Silicon PNP transistor in a TO-92 Plastic Package Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High hFE and excellent hFE linearity. Applications Driver stage of AF power amplifier. | FOSHAN 蓝箭电子 | |||
PNP SILICON TRANSISTOR DESCRIPTION The 2SA733 is designed for use in driver state of AF amplifier. FEATURES ● High hFE and Excellent Linearity : 200 TYP. hFE (VCE = -6.0 V, IC = -1.0 mA) | NEC 瑞萨 | |||
PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68. | Fairchild 仙童半导体 | |||
PNP SILICON TRANSISTOR DESCRIPTION The 2SA733 is designed for use in diver stage of AF amplifier. FEATURES • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature +150°C Maximum Maximum Powe | RENESAS 瑞萨 | |||
Silicon Epitaxial Planar Transistor FEATURES ● Excellent hFE Linearity. ● Power dissipation: PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier. | BILIN 银河微电 | |||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power dissipation | DAYA 大亚电器 | |||
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier applicatioms. | DCCOM 道全 | |||
TO-92 Plastic-Encapsulate Transistors FEATURE Complementary to 2SC945 Excellent hFE linearity Low noise | DGNJDZ 南晶电子 | |||
PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix | MCC | |||
Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High hFE and excellent hFE linearity. Applications Driver stage of AF power amplifier. | FOSHAN 蓝箭电子 | |||
PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68. | Fairchild 仙童半导体 | |||
PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix | MCC | |||
PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix | MCC | |||
PNP Silicon Plastic-Encapsulate Transistor Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix | MCC | |||
PNP Plastic Encapsulated Transistor FEATURES Power dissipation PACKAGE INFORMATION Weight: 0.2100g (Approximately) | SECOS 喜可士 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- V(BR)CEo= -25V (Min) • Good Linearity of hFE • Complement to Type 2SC1368 APPLICATIONS • Designed for use as driver stages in high-fidelity amplifiers and TV circuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High current • Complement to type 2SC1368 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High current • Complement to type 2SC1368 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High current • Complement to type 2SC1368 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits | JMNIC 锦美电子 | |||
TRANSISTOR 文件:192.33 Kbytes Page:3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
PNP Plastic Encapsulated Transistor 文件:420.42 Kbytes Page:2 Pages | SECOS 喜可士 | |||
50V,0.1A,General Purpose PNP Bipolar Transistor | GALAXY 银河微电 | |||
小信号晶体管 | STMICROELECTRONICS 意法半导体 | |||
Bipolar Transistor | UTC 友顺 | |||
Low Frequency Amplifier PNP Epitaxial Silicon Transistor 文件:959.85 Kbytes Page:7 Pages | FUTUREWAFER | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
PNP Plastic Encapsulated Transistor 文件:420.42 Kbytes Page:2 Pages | SECOS 喜可士 | |||
PNP Transistors 文件:1.13585 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.16683 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
PNP Transistors 文件:1.30545 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:1.30545 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Silicon Plastic-Encapsulate Transistor 文件:411.6 Kbytes Page:2 Pages | MCC | |||
PNP Transistors 文件:1.30545 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR 文件:175.57 Kbytes Page:4 Pages | UTC 友顺 | |||
PNP General Purpose Amplifier 文件:128.94 Kbytes Page:4 Pages | DIODES 美台半导体 | |||
封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
PNP Silicon Plastic-Encapsulate Transistor 文件:411.6 Kbytes Page:2 Pages | MCC | |||
封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
PNP Silicon Plastic-Encapsulate Transistor 文件:411.6 Kbytes Page:2 Pages | MCC | |||
PNP Silicon Plastic-Encapsulate Transistor 文件:411.6 Kbytes Page:2 Pages | MCC | |||
PNP Silicon Plastic-Encapsulate Transistor 文件:411.6 Kbytes Page:2 Pages | MCC | |||
Low Frequency Amplifier PNP Epitaxial Silicon Transistor 文件:959.85 Kbytes Page:7 Pages | FUTUREWAFER |
2SA73产品属性
- 类型
描述
- 型号
2SA73
- 功能描述
Si PNP Epitaxial Planar
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ |
25+ |
SOT23 |
2000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
CJ/长电 |
23+ |
SOT-23 |
4671177 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
TO-92 |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
PHI |
25+ |
92 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
HITACHI/日立 |
24+ |
TO 126 |
158381 |
明嘉莱只做原装正品现货 |
|||
FSC |
1922+ |
TO-92 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
24+ |
4 |
||||||
ST |
26+ |
CAN to-39 |
60000 |
只有原装 可配单 |
|||
UMW 友台 |
23+ |
SOT-23-3 |
6000 |
原装正品,实单请联系 |
|||
友台UMW |
25+ |
DIP |
3000 |
国产替换现货降本 |
2SA73芯片相关品牌
2SA73规格书下载地址
2SA73参数引脚图相关
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2SA73数据表相关新闻
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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