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2SA73晶体管资料

  • 2SA73别名:2SA73三极管、2SA73晶体管、2SA73晶体三极管

  • 2SA73生产厂家:日本东芝公司

  • 2SA73制作材料:Ge-PNP

  • 2SA73性质:调幅 (AM)

  • 2SA73封装形式:直插封装

  • 2SA73极限工作电压:18V

  • 2SA73最大电流允许值:0.005A

  • 2SA73最大工作频率:35MHZ

  • 2SA73引脚数:3

  • 2SA73最大耗散功率

  • 2SA73放大倍数

  • 2SA73图片代号:D-58

  • 2SA73vtest:18

  • 2SA73htest:35000000

  • 2SA73atest:0.005

  • 2SA73wtest:0

  • 2SA73代换 2SA73用什么型号代替:AF124,AF125,AF126,AF200,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,

型号 功能描述 生产厂家 企业 LOGO 操作
2SA73

丝印代码:CS;SOT-23 Plastic-Encapsulate Transistors

文件:578.36 Kbytes Page:4 Pages

UMW

友台半导体

Si PNP Epitaxial Planar

Si PNP Epitaxial Planar AF Power Amplifier and Driver Complementary pair with 2SC1317, 2SC1318, 2SC1346, 2SC1347

ETCList of Unclassifed Manufacturers

未分类制造商

Si PNP Epitaxial Planar

Si PNP Epitaxial Planar AF Power Amplifier and Driver Complementary pair with 2SC1317, 2SC1318, 2SC1346, 2SC1347

ETCList of Unclassifed Manufacturers

未分类制造商

PNP Plastic Encapsulated Transistor

FEATURES • Complementary of the 2SC945 • Collector to base voltage: -60V

SECOS

喜可士

PNP EPITAXIAL PLANAR TRANSISTOR

Description The 2SA733 is designed for use in driver stage of AF amplifier applications..

TGS

丝印代码:CS;Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE Linearity. ● Power dissipation: PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier.

LUGUANG

鲁光电子

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor ST 2SC945 is recommended. On special request, these transistors can

DGNJDZ

南晶电子

TO-92 Plastic-Encapsulate Transistors

FEATURE Complementary to 2SC945 Excellent hFE linearity Low noise

DGNJDZ

南晶电子

Collector-Base Voltage

FEATURES Collector-Base Voltage Complement to C945

MAKOSEMI

美科半导体

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High hFE and excellent hFE linearity. Applications Driver stage of AF power amplifier.

FOSHAN

蓝箭电子

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA733 is designed for use in driver state of AF amplifier. FEATURES ● High hFE and Excellent Linearity : 200 TYP. hFE (VCE = -6.0 V, IC = -1.0 mA)

NEC

瑞萨

PNP General Purpose Amplifier

Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68.

FAIRCHILD

仙童半导体

Collector-Base Voltage: VCBO=-60V

Features ● Collector-Base Voltage: VCBO=-60V

KEXIN

科信电子

PNP SILICON TRANSISTOR

DESCRIPTION The 2SA733 is designed for use in diver stage of AF amplifier. FEATURES • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA) ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature +150°C Maximum Maximum Powe

RENESAS

瑞萨

丝印代码:CS;Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE Linearity. ● Power dissipation: PD=250mW. ● High hFE. APPLICATIONS ● Designed for use in driver stage of amplifier.

BILIN

银河微电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation

DAYA

大亚电器

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier applicatioms.

DCCOM

道全

TO-92 Plastic-Encapsulate Transistors

FEATURE Complementary to 2SC945 Excellent hFE linearity Low noise

DGNJDZ

南晶电子

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix

MCC

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High hFE and excellent hFE linearity. Applications Driver stage of AF power amplifier.

FOSHAN

蓝箭电子

PNP General Purpose Amplifier

Features • This device is designed for general purpose amplifier applications at collector currents to 300 mA. • Sourced from Process 68.

FAIRCHILD

仙童半导体

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix

MCC

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix

MCC

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.25Watts of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 60V • Operating and storage junction temperature range: -55℃ to +150℃ • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix

MCC

PNP Plastic Encapsulated Transistor

FEATURES Power dissipation PACKAGE INFORMATION Weight: 0.2100g (Approximately)

SECOS

喜可士

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type 2SC1368 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type 2SC1368 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- V(BR)CEo= -25V (Min) • Good Linearity of hFE • Complement to Type 2SC1368 APPLICATIONS • Designed for use as driver stages in high-fidelity amplifiers and TV circuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type 2SC1368 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

SAVANTIC

Low Frequency Amplifier PNP Epitaxial Silicon Transistor

文件:959.85 Kbytes Page:7 Pages

FUTUREWAFER

50V,0.1A,General Purpose PNP Bipolar Transistor

GALAXY

银河微电

小信号晶体管

STMICROELECTRONICS

意法半导体

Bipolar Transistor

UTC

友顺

TRANSISTOR

文件:192.33 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PNP Plastic Encapsulated Transistor

文件:420.42 Kbytes Page:2 Pages

SECOS

喜可士

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

PNP Plastic Encapsulated Transistor

文件:420.42 Kbytes Page:2 Pages

SECOS

喜可士

PNP Transistors

文件:1.13585 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.16683 Mbytes Page:2 Pages

KEXIN

科信电子

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

PNP Transistors

文件:1.30545 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.30545 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

PNP Transistors

文件:1.30545 Mbytes Page:2 Pages

KEXIN

科信电子

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

文件:175.57 Kbytes Page:4 Pages

UTC

友顺

PNP General Purpose Amplifier

文件:128.94 Kbytes Page:4 Pages

DIODES

美台半导体

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

PNP Silicon Plastic-Encapsulate Transistor

文件:411.6 Kbytes Page:2 Pages

MCC

丝印代码:ST2SA433LB;Low Frequency Amplifier PNP Epitaxial Silicon Transistor

文件:959.85 Kbytes Page:7 Pages

FUTUREWAFER

2SA73产品属性

  • 类型

    描述

  • VCEO (V):

    50

  • hFE min.:

    90

  • hFE max.:

    600

  • Pc (W):

    0.25

  • Production Status:

    EOL

  • Downloadable:

    SPICE

更新时间:2026-5-14 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
TO92
20000
全新原装假一赔十
UTC/友顺
25+
TO-92
55000
UTC/友顺2SA733L-P即刻询购立享优惠#长期有货
NEC
26+
TO92
12335
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
NEC
24+
CAN3
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
ST
25+
CAN to-39
20000
原装,请咨询
ST
23+
CAN to-39
16900
正规渠道,只有原装!
ST
26+
CAN to-39
60000
只有原装 可配单
NB
23+
NA
148
专做原装正品,假一罚百!
NEC
25+
TO-92
880000
明嘉莱只做原装正品现货
CJ/长电
21+
TO-92
30000
百域芯优势 实单必成 可开13点增值税发票

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