2SA174晶体管资料

  • 2SA174别名:2SA174三极管、2SA174晶体管、2SA174晶体三极管

  • 2SA174生产厂家:日本日电公司

  • 2SA174制作材料:Ge-PNP

  • 2SA174性质:射频/高频放大 (HF)_开关管 (S)

  • 2SA174封装形式:直插封装

  • 2SA174极限工作电压:20V

  • 2SA174最大电流允许值:0.05A

  • 2SA174最大工作频率:4MHZ

  • 2SA174引脚数:3

  • 2SA174最大耗散功率:0.175W

  • 2SA174放大倍数

  • 2SA174图片代号:D-9

  • 2SA174vtest:20

  • 2SA174htest:4000000

  • 2SA174atest:0.05

  • 2SA174wtest:0.175

  • 2SA174代换 2SA174用什么型号代替:ASY26,ASY27,ASY48,3AG87A,

2SA174价格

参考价格:¥11.4150

型号:2SA1746 品牌:Sanken 备注:这里有2SA174多少钱,2025年最近7天走势,今日出价,今日竞价,2SA174批发/采购报价,2SA174行情走势销售排行榜,2SA174报价。
型号 功能描述 生产厂家&企业 LOGO 操作

High-Voltage Driver Applications

High-Voltage Driver Applications Features • High breakdown votlage. • Adoption of MBIT process. • Excellent hFE linearlity

SANYOSanyo Semicon Device

三洋三洋电机株式会社

HIGH VOLTAGE DRIVER APPLICATION

HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity.

UTC

友顺

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

东电电子

High-Voltage Driver Applications

Features ● High Breakdown Voltage ● Adoption of MBIT Process ● Excellent hFE Linearlity.

KEXIN

科信电子

Plastic-Encapsulate Transistors

FEATURES • High breadown voltage • Excellent hFE linearlity

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

PNP Epitaxial Planar Silicon Transistor

FEATURES ● High breakdown voltage. ● Adoption of MBIT process. ● Excellent hFE linearlity. APPLICATIONS ● High-Voltage Driver Applications

BILIN

银河微电

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High breadown voltage ● Excellent hFE linearlity

JIANGSU

长电科技

High voltage driver application

FEATURES ● High breadown voltage. ● Excellent hFE linearlity.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Epitaxial Planar Silicon Transistor

FEATURES High breakdown voltage. Adoption of MBIT process. Excellent hFE linearlity. APPLICATIONS High-Voltage Driver Applications

DGNJDZ

南晶电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(Sus)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , lc= -1A) • Low Saturation Voltage- : VCE APPLICATIONS • This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),w

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(Sus)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , lc= -1A) • Low Saturation Voltage- : VCE APPLICATIONS • This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),w

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • For use as a driver in DC/DC converters and actuators

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • For use as a driver in DC/DC converters and actuators

JMNIC

锦美电子

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

NEC

瑞萨

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) APPLICATIONS • This type of power transistor is developed for high-speed

ISC

无锡固电

SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulatio

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

NEC

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

NEC

瑞萨

Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS • This type of power transistor is developed for high-speed

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS • This type of power transistor is developed for high-speed

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V, IC= -3A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A

ISC

无锡固电

Low-Frequency General-Purpose Amp Applications

Low-Frequency General-Purpose Amplifier Applications Features • Very small-sized package permitting the 2SA1745 2SC4555-applied set to be made small and slim. • Low collector-to-emitter saturation voltage.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

PNP Epitaxial Planar Silicon Transistors

Features ● Very small-sized package. ● Low collector-to-emitter saturation voltage.

KEXIN

科信电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For chopper regulator,switch and general purpose applications

JMNIC

锦美电子

Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, Switch and General Purpose)

Application : Chopper Regulator, Switch and General Purpose

Sanken

三垦

Silicon PNP power Transistors

DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For chopper regulator,switch and general purpose applications

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -5A • Good Linearity of hFE ​​​​​​​ APPLICATIONS • Designed for chopper regulator, switch and general purpose applications

ISC

无锡固电

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4562 ■ Features • High transition frequency fT • Small collector output capacitance Cob • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Panasonic

松下

Silicon PNP Epitaxial Planar Type

Features ● High transition frequency fT. ● Small collector output capacitance Cob.

KEXIN

科信电子

High-Definition CRT Display Video Output Applications???????

High-Definition CRT Display Video Output Applications Features • High fT : fT=400MHz (typ). • High breakdown voltage : VCEO≥200V min. • High current. • Small reverse transfer capacitance and excellent high frequnecy chacateristics : C re=3.4pF (NPN) , 4.2pF (PNP). • Complementary 2SA1749 and

SANYOSanyo Semicon Device

三洋三洋电机株式会社

HIGH VOLTAGE DRIVER APPLICATION

文件:160.67 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE DRIVER APPLICATION

文件:193.45 Kbytes Page:5 Pages

UTC

友顺

PNP Epitaxial Planar Silicon Transistor

文件:212.31 Kbytes Page:4 Pages

BILIN

银河微电

HIGH VOLTAGE DRIVER APPLICATION

文件:160.67 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE DRIVER APPLICATION

文件:193.45 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE DRIVER APPLICATION

文件:185.84 Kbytes Page:5 Pages

UTC

友顺

PNP TRANSISTOR

文件:146.38 Kbytes Page:1 Pages

WINNERJOIN

永而佳

PNP Epitaxial Planar Silicon Transistor

文件:212.31 Kbytes Page:4 Pages

BILIN

银河微电

HIGH VOLTAGE DRIVER APPLICATION

文件:160.67 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE DRIVER APPLICATION

文件:185.84 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE DRIVER APPLICATION

文件:193.45 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE DRIVER APPLICATION

文件:160.67 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE DRIVER APPLICATION

文件:193.45 Kbytes Page:5 Pages

UTC

友顺

HIGH VOLTAGE DRIVER APPLICATION

文件:160.67 Kbytes Page:5 Pages

UTC

友顺

SILICON POWER TRANSISTOR

文件:292.53 Kbytes Page:8 Pages

RENESAS

瑞萨

Silicon PNP Power Transistors

文件:219.17 Kbytes Page:4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:219.17 Kbytes Page:4 Pages

JMNIC

锦美电子

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件:292.53 Kbytes Page:8 Pages

RENESAS

瑞萨

SILICON POWER TRANSISTOR

文件:292.53 Kbytes Page:8 Pages

RENESAS

瑞萨

SILICON POWER TRANSISTOR

文件:250.49 Kbytes Page:8 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件:250.49 Kbytes Page:8 Pages

RENESAS

瑞萨

SILICON POWER TRANSISTOR

文件:269.32 Kbytes Page:8 Pages

RENESAS

瑞萨

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件:269.32 Kbytes Page:8 Pages

RENESAS

瑞萨

PNP Transistors

文件:1.10677 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.10677 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.10677 Mbytes Page:2 Pages

KEXIN

科信电子

PNP Transistors

文件:1.10677 Mbytes Page:2 Pages

KEXIN

科信电子

Silicon PNP Power Transistors

文件:189.11 Kbytes Page:4 Pages

JMNIC

锦美电子

2SA174产品属性

  • 类型

    描述

  • 型号

    2SA174

  • 制造商

    SANYO

  • 功能描述

    omo 400V 0.2A 60 to 120 PCP Tape & Reel

  • 制造商

    SANYO Semiconductor Co Ltd

  • 功能描述

    TRANS PNP HIGHV 400V 0.2A SOT89

  • 制造商

    Sanyo

  • 功能描述

    0

更新时间:2025-8-7 13:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANKEN
24+
TO-3PF
60000
全新原装现货
三肯
24+
NA/
4450
原装现货,当天可交货,原型号开票
三垦/SANKEN
24+
TO-3P
26970
郑重承诺只做原装进口现货
ISC
2011
TO-247
5
全新原装正品现货
SANKEN
23+
TO-3P
1028
全新原装正品现货,支持订货
SANKEN
22+
NA
45466
原装正品现货
SANKEN
18+
TO-3P
85600
保证进口原装可开17%增值税发票
SANKEN
21+
NA
1
原装现货假一赔十
SPTECH
TO-3
22+
56000
全新原装进口,假一罚十
SANKEN
21+
NA
1062
只做原装正品,不止网上数量,欢迎电话微信查询!

2SA174数据表相关新闻