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2SA174晶体管资料
- 2SA174别名:2SA174三极管、2SA174晶体管、2SA174晶体三极管 
- 2SA174生产厂家:日本日电公司 
- 2SA174制作材料:Ge-PNP 
- 2SA174性质:射频/高频放大 (HF)_开关管 (S) 
- 2SA174封装形式:直插封装 
- 2SA174极限工作电压:20V 
- 2SA174最大电流允许值:0.05A 
- 2SA174最大工作频率:4MHZ 
- 2SA174引脚数:3 
- 2SA174最大耗散功率:0.175W 
- 2SA174放大倍数: 
- 2SA174图片代号:D-9 
- 2SA174vtest:20 
- 2SA174htest:4000000 
- 2SA174atest:0.05
- 2SA174wtest:0.175 
- 2SA174代换 2SA174用什么型号代替:ASY26,ASY27,ASY48,3AG87A, 
2SA174价格
参考价格:¥11.4150
型号:2SA1746 品牌:Sanken 备注:这里有2SA174多少钱,2025年最近7天走势,今日出价,今日竞价,2SA174批发/采购报价,2SA174行情走势销售排行榜,2SA174报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
| High-Voltage Driver Applications High-Voltage Driver Applications Features • High breakdown votlage. • Adoption of MBIT process. • Excellent hFE linearlity | SANYO 三洋 | |||
| HIGH VOLTAGE DRIVER APPLICATION HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity. | UTC 友顺 | |||
| PNP Epitaxial Planar Silicon Transistor FEATURES ● High breakdown voltage. ● Adoption of MBIT process. ● Excellent hFE linearlity. APPLICATIONS ● High-Voltage Driver Applications | BILIN 银河微电 | |||
| SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High breadown voltage ● Excellent hFE linearlity | JIANGSU 长电科技 | |||
| High-Voltage Driver Applications Features ● High Breakdown Voltage ● Adoption of MBIT Process ● Excellent hFE Linearlity. | KEXIN 科信电子 | |||
| PNP Epitaxial Planar Silicon Transistor FEATURES High breakdown voltage. Adoption of MBIT process. Excellent hFE linearlity. APPLICATIONS High-Voltage Driver Applications | DGNJDZ 南晶电子 | |||
| TRANSISTOR (PNP) FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
| High voltage driver application FEATURES ● High breadown voltage. ● Excellent hFE linearlity. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
| Plastic-Encapsulate Transistors FEATURES • High breadown voltage • Excellent hFE linearlity | HOTTECH 合科泰 | |||
| Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • For use as a driver in DC/DC converters and actuators | SAVANTIC | |||
| Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(Sus)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , lc= -1A) • Low Saturation Voltage- : VCE APPLICATIONS • This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),w | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • For use as a driver in DC/DC converters and actuators | JMNIC 锦美电子 | |||
| Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(Sus)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , lc= -1A) • Low Saturation Voltage- : VCE APPLICATIONS • This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),w | ISC 无锡固电 | |||
| PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ | NEC 瑞萨 | |||
| PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ | NEC 瑞萨 | |||
| isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) APPLICATIONS • This type of power transistor is developed for high-speed | ISC 无锡固电 | |||
| PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ | NEC 瑞萨 | |||
| SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulatio | RENESAS 瑞萨 | |||
| Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min) DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS • This type of power transistor is developed for high-speed | ISC 无锡固电 | |||
| PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ | NEC 瑞萨 | |||
| isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V, IC= -3A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A | ISC 无锡固电 | |||
| Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS • This type of power transistor is developed for high-speed | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
| PNP Epitaxial Planar Silicon Transistors Features ● Very small-sized package. ● Low collector-to-emitter saturation voltage. | KEXIN 科信电子 | |||
| Low-Frequency General-Purpose Amp Applications Low-Frequency General-Purpose Amplifier Applications Features • Very small-sized package permitting the 2SA1745 2SC4555-applied set to be made small and slim. • Low collector-to-emitter saturation voltage. | SANYO 三洋 | |||
| Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -5A • Good Linearity of hFE  APPLICATIONS • Designed for chopper regulator, switch and general purpose applications | ISC 无锡固电 | |||
| Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, Switch and General Purpose) Application : Chopper Regulator, Switch and General Purpose | Sanken 三垦 | |||
| Silicon PNP power Transistors DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For chopper regulator,switch and general purpose applications | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-3PML package • Low collector saturation voltage APPLICATIONS • For chopper regulator,switch and general purpose applications | JMNIC 锦美电子 | |||
| Silicon PNP Epitaxial Planar Type Features ● High transition frequency fT. ● Small collector output capacitance Cob. | KEXIN 科信电子 | |||
| Silicon PNP epitaxial planer type Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4562 ■ Features • High transition frequency fT • Small collector output capacitance Cob • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the | Panasonic 松下 | |||
| High-Definition CRT Display Video Output Applications??????? High-Definition CRT Display Video Output Applications Features • High fT : fT=400MHz (typ). • High breakdown voltage : VCEO≥200V min. • High current. • Small reverse transfer capacitance and excellent high frequnecy chacateristics : C re=3.4pF (NPN) , 4.2pF (PNP). • Complementary 2SA1749 and | SANYO 三洋 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:160.67 Kbytes Page:5 Pages | UTC 友顺 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:193.45 Kbytes Page:5 Pages | UTC 友顺 | |||
| PNP Epitaxial Planar Silicon Transistor 文件:212.31 Kbytes Page:4 Pages | BILIN 银河微电 | |||
| 400V,0.2A,General Purpose PNP Bipolar Transistor | GALAXY 银河微电 | |||
| Bipolar Transistor | UTC 友顺 | |||
| 晶体管 | JSCJ 长晶科技 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:160.67 Kbytes Page:5 Pages | UTC 友顺 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:193.45 Kbytes Page:5 Pages | UTC 友顺 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:185.84 Kbytes Page:5 Pages | UTC 友顺 | |||
| PNP TRANSISTOR 文件:146.38 Kbytes Page:1 Pages | WINNERJOIN 永而佳 | |||
| PNP Epitaxial Planar Silicon Transistor 文件:212.31 Kbytes Page:4 Pages | BILIN 银河微电 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:185.84 Kbytes Page:5 Pages | UTC 友顺 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:193.45 Kbytes Page:5 Pages | UTC 友顺 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:160.67 Kbytes Page:5 Pages | UTC 友顺 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:193.45 Kbytes Page:5 Pages | UTC 友顺 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:160.67 Kbytes Page:5 Pages | UTC 友顺 | |||
| HIGH VOLTAGE DRIVER APPLICATION 文件:160.67 Kbytes Page:5 Pages | UTC 友顺 | |||
| SILICON POWER TRANSISTOR 文件:292.53 Kbytes Page:8 Pages | RENESAS 瑞萨 | |||
| Silicon PNP Power Transistors 文件:219.17 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
| Silicon PNP Power Transistors 文件:219.17 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
| PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 文件:292.53 Kbytes Page:8 Pages | RENESAS 瑞萨 | |||
| SILICON POWER TRANSISTOR 文件:292.53 Kbytes Page:8 Pages | RENESAS 瑞萨 | |||
| SILICON POWER TRANSISTOR 文件:250.49 Kbytes Page:8 Pages | RENESAS 瑞萨 | |||
| PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 文件:250.49 Kbytes Page:8 Pages | RENESAS 瑞萨 | |||
| SILICON POWER TRANSISTOR 文件:269.32 Kbytes Page:8 Pages | RENESAS 瑞萨 | |||
| PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 文件:269.32 Kbytes Page:8 Pages | RENESAS 瑞萨 | |||
| PNP Transistors 文件:1.10677 Mbytes Page:2 Pages | KEXIN 科信电子 | |||
| PNP Transistors 文件:1.10677 Mbytes Page:2 Pages | KEXIN 科信电子 | 
2SA174产品属性
- 类型描述 
- 型号2SA174 
- 制造商SANYO 
- 功能描述omo 400V 0.2A 60 to 120 PCP Tape & Reel 
- 制造商SANYO Semiconductor Co Ltd 
- 功能描述TRANS PNP HIGHV 400V 0.2A SOT89 
- 制造商Sanyo 
- 功能描述0 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
| RENESAS | 2511 | TO-220F | 323 | 电子元器件采购降本30%!原厂直采,砍掉中间差价 | |||
| Renesas(瑞萨) | 24+ | 标准封装 | 7848 | 支持大陆交货,美金交易。原装现货库存。 | |||
| NEC | 23+ | TO-220 | 5000 | 原厂授权代理,海外优势订货渠道。可提供大量库存,详 | |||
| 24+ | N/A | 78000 | 一级代理-主营优势-实惠价格-不悔选择 | ||||
| NEC | 17+ | TO-220F | 60000 | 保证进口原装可开17%增值税发票 | |||
| SPTECH | 2447 | TO-220F | 105000 | 50个/管一级代理专营品牌!原装正品,优势现货,长期 | |||
| NEC | 23+ | TO-220F | 50000 | 全新原装正品现货,支持订货 | |||
| NEC | 25+ | 9 | 公司现货库存 | ||||
| PANASONIC | 24+ | 60000 | |||||
| SPTECH质超 | 2407+ | TO-220F | 30098 | 全新原装!仓库现货,大胆开价! | 
2SA174芯片相关品牌
2SA174规格书下载地址
2SA174参数引脚图相关
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