SILICON POWER TRANSISTOR

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Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(Sus)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , lc= -1A) • Low Saturation Voltage- : VCE APPLICATIONS • This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),w

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • For use as a driver in DC/DC converters and actuators

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage APPLICATIONS • For use as a driver in DC/DC converters and actuators

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

SILICON POWER TRANSISTOR

文件：292.53 Kbytes Page：8 Pages