PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

The 2SA1743 is a power transistor developed for high-speed

switching and features a high hFE at low VCE(sat). This transistor is

ideal for use as a driver in DC/DC converters and actuators.

In addition, a small resin-molded insulation type package

contributes to high-density mounting and reduction of mounting

cost.

FEATURES

• High hFE and low VCE(sat):

hFE ≥ 100 (VCE = −2 V, IC = −2 A)

V CE(sat) ≤ 0.3 V (IC = −6 A, IB = −0.3 A)

• Full-mold package that does not require an insulating board or

bushing

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices”

(Document No. C11531E) published by NEC Corporation to know

the specification of quality grade on the devices and its

recommended applications.