Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS • This type of power transistor is developed for high-speed

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V, IC= -3A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) APPLICATIONS • This type of power transistor is developed for high-speed

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

SILICON POWER TRANSISTOR

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Trans GP BJT PNP 60V 15A Automotive 3-Pin(3+Tab) TO-220 Isolated

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PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件：269.32 Kbytes Page：8 Pages