PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation typ

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO= -60V(Min) • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) • Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) APPLICATIONS • This type of power transistor is developed for high-speed

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SA1742 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded • High hFE and low VCE(sat): hFE ≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A VCE(sat) ≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A\n• Full-mold package that does not require an insulating board or bushing;

BJT 双极性三极管

SILICON POWER TRANSISTOR

文件：250.49 Kbytes Page：8 Pages

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

文件：250.49 Kbytes Page：8 Pages