2SA158晶体管资料

  • 2SA1580别名:2SA1580三极管、2SA1580晶体管、2SA1580晶体三极管

  • 2SA1580生产厂家

  • 2SA1580制作材料:Si-PNP

  • 2SA1580性质:表面帖装型 (SMD)_视频输出 (Vid)

  • 2SA1580封装形式:贴片封装

  • 2SA1580极限工作电压:70V

  • 2SA1580最大电流允许值:0.05A

  • 2SA1580最大工作频率:700MHZ

  • 2SA1580引脚数:3

  • 2SA1580最大耗散功率

  • 2SA1580放大倍数

  • 2SA1580图片代号:H-15

  • 2SA1580vtest:70

  • 2SA1580htest:700000000

  • 2SA1580atest:0.05

  • 2SA1580wtest:0

  • 2SA1580代换 2SA1580用什么型号代替

2SA158价格

参考价格:¥0.1819

型号:2SA1586-GR,LF 品牌:Toshiba 备注:这里有2SA158多少钱,2025年最近7天走势,今日出价,今日竞价,2SA158批发/采购报价,2SA158行情走势销售排行榜,2SA158报价。
型号 功能描述 生产厂家&企业 LOGO 操作

High-DefinitionCRTDisplayApplications?

TransistorsforTVDisplayVideoOutputUse

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

TransistorsforTVDisplayVideoOutputUse

TransistorsforTVDisplayVideoOutputUse

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

SwitchingApplications(withBiasResistance)

Applications *Switchingcircuit,invertercircuit,interfacecircuit,drivercircuit

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

SOT-23Plastic-EncapsulateTransistors

FEATURES LowVCE(sat) ExcellentDCcurrentgaincharacteristics.Powerdissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LowVCE(sat) ●ExcellentDCcurrentgaincharacteristics.Powerdissipation

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features LowVCE(sat),Excellentcurrentgaincharacteristics;complementarypairwith2SC4115. Applications LowFrequencyAmplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

TRANSISTOR

DESCRIPTION PNPEpitaxialplanartypeSiliconTransistor FEATURES LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) APPLICATION Excellentcurrentgaincharacteristics Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,NotebookPC,etc.)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

LowVce(sat)Transistor(-20V,-3A)

Features 1)LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S.

ROHMRohm

罗姆罗姆半导体集团

ROHM

PNPPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Powerdissipation:PD=0.4W(Tamb=25°C) •Colle

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PD:0.4W(Tamb=25℃) Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

TO-92SPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LowVCE(sat). ●ExcellentDCcurrentgaincharacteristics. ●Powerdissipation

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

LowVCE(sat)Transistor(??0V,??A)

Features 1)LowVCE(sat). VCE(sat)=−0.2V(Typ.) (IC/IB=−2A/−0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor

ROHMRohm

罗姆罗姆半导体集团

ROHM

TRANSISTOR(PNP)

FEATURES Powerdissipation PD:0.4W(Tamb=25℃) Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN

PNPPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Powerdissipation:PD=0.4W(Tamb=25°C) •Colle

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPPlastic-EncapsulateTransistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Powerdissipation:PD=0.4W(Tamb=25°C) •Colle

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Highvoltageandhighcurrent. ●ExcellentHFELinearity. ●HighhFElinearity. ●Complementaryto2SC4116. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

TRANSISTOR(PNP)

FEATURES ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage APPLICATIONS ●GeneralPurposeAmplification.

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

PNPSiliconPlasticEncapsulatedTransistor

FEATURES HighDCCurrentGain HighVoltageandHighCurrent Complementaryto2SC4116 SmallPackage APPLICATIONS GeneralPurposeAmplification

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SiliconPNPEpitaxial

■Features ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),10dB(max) •Complementary

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SOT-323Plastic-EncapsulateTransistors

FEATURES HighDCCurrentGain HighVoltageandHighCurrent. Complementaryto2SC4116 SmallPackage APPLICATIONS GeneralPurposeAmplification.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage APPLICATIONS ●GeneralPurposeAmplification.

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),10dB(max) •Complementary

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),10dB(max) •Complementary

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

PNPSiliconEpitaxialPlanarTransistor

FEATURES Highvoltageandhighcurrent. ExcellentHFELinearity. HighhFElinearity. Complementaryto2SC4116. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

SiliconPNPEpitaxial

■Features ●Highvoltage ●Lownoise ●Complementaryto2SC4117 ●SmallPackage

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TRANSISTOR(AUDIOFREQUENCYLOWPOWERAMPLIFIER,DRIVERSTAGEAMPLIFIER,SWITCHINGAPPLICATIONS

AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)atVCE=−6V,IC=−400mA •Complementaryto2SC4118

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconPNPEpitaxial

■Features ●ExcellenthFElinearity:hFE(2)=25(min) atVCE=−6V,IC=−400mA ●Complementaryto2SC4118

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPEpitaxialPlanarSiliconTransistor

文件:38.95 Kbytes Page:1 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:599.07 Kbytes Page:1 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:599.07 Kbytes Page:1 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:599.07 Kbytes Page:1 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:599.07 Kbytes Page:1 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

TRANSISTORSTO92LTO-92LSMRT

文件:195.39 Kbytes Page:2 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

1.2WPACKAGEPOWERTAPEDTRANSISTORDESIGNEDFORUSEWITHANAUTOMATICPLACEMENTMECHINE

文件:88.13 Kbytes Page:2 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

LowVCE(sat)Transistor(−20V,−3A)

文件:91.27 Kbytes Page:4 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

PNPPlastic-EncapsulateTransistors

文件:416.62 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPPlastic-EncapsulateTransistor

文件:314.38 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPPlastic-EncapsulateTransistors

文件:416.62 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPPlastic-EncapsulateTransistors

文件:416.62 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-226-3,TO-92-3 短体 包装:散装 描述:TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPPlastic-EncapsulateTransistors

文件:416.62 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-226-3,TO-92-3 短体(成形引线) 包装:散装 描述:TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

PNPSiliconEpitaxialPlanarTransistor

文件:234.84 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

AudioFrequencyGeneralPurposeAmplifierApplications

文件:382.21 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

文件:382.21 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

PNPSiliconPlasticEncapsulatedTransistor

文件:83.35 Kbytes Page:1 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

PNPTransistors

文件:1.16178 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPSiliconEpitaxialPlanarTransistor

文件:234.84 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

PNPTransistors

文件:1.16178 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.16178 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.16178 Mbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

AudioFrequencyGeneralPurposeAmplifierApplications

文件:629.16 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

AudioFrequencyGeneralPurposeAmplifierApplications

文件:629.16 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

PNPTransistors

文件:1.63515 Mbytes Page:3 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

2SA158产品属性

  • 类型

    描述

  • 型号

    2SA158

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY SANYO TRANSISTOR SPA-50V -.1A .3W ECB

更新时间:2025-5-19 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MSV/萌盛微
24+
NA/
6250
原装现货,当天可交货,原型号开票
Toshiba
18+
N/A
30000
公司只有原装正品
TOSHIBA/东芝
24+
NA
990000
明嘉莱只做原装正品现货
TOSHIBA/东芝
1948+
SOT-323
6852
只做原装正品现货!或订货假一赔十!
SOT-323
08+
TOSHIBA
1766
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA
24+/25+
3000
原装正品现货库存价优
TOSHIBA
24+
SOT-323
5000
只做原装正品现货 欢迎来电查询15919825718
TOSHIBA/东芝
25+
SOT-323
65428
百分百原装现货 实单必成
TOSHIBA(东芝)
23+
SOT-323
3030
三极管/MOS管/晶体管 > 三极管(BJT)
tosh
23+
NA
6846
专做原装正品,假一罚百!

2SA158芯片相关品牌

  • BILIN
  • Cree
  • DIT
  • ETC
  • HY
  • MOLEX2
  • OHMITE
  • RCD
  • SAMESKY
  • spansion
  • TOKEN
  • VBSEMI

2SA158数据表相关新闻