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2SA158晶体管资料
2SA1580别名:2SA1580三极管、2SA1580晶体管、2SA1580晶体三极管
2SA1580生产厂家:
2SA1580制作材料:Si-PNP
2SA1580性质:表面帖装型 (SMD)_视频输出 (Vid)
2SA1580封装形式:贴片封装
2SA1580极限工作电压:70V
2SA1580最大电流允许值:0.05A
2SA1580最大工作频率:700MHZ
2SA1580引脚数:3
2SA1580最大耗散功率:
2SA1580放大倍数:
2SA1580图片代号:H-15
2SA1580vtest:70
2SA1580htest:700000000
- 2SA1580atest:0.05
2SA1580wtest:0
2SA1580代换 2SA1580用什么型号代替:
2SA158价格
参考价格:¥0.1819
型号:2SA1586-GR,LF 品牌:Toshiba 备注:这里有2SA158多少钱,2025年最近7天走势,今日出价,今日竞价,2SA158批发/采购报价,2SA158行情走势销售排行榜,2SA158报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
High-DefinitionCRTDisplayApplications? TransistorsforTVDisplayVideoOutputUse | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
TransistorsforTVDisplayVideoOutputUse TransistorsforTVDisplayVideoOutputUse | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
SwitchingApplications(withBiasResistance) Applications *Switchingcircuit,invertercircuit,interfacecircuit,drivercircuit | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SOT-23Plastic-EncapsulateTransistors FEATURES LowVCE(sat) ExcellentDCcurrentgaincharacteristics.Powerdissipation | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●LowVCE(sat) ●ExcellentDCcurrentgaincharacteristics.Powerdissipation | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
SiliconPNPtransistorinaTO-92PlasticPackage Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features LowVCE(sat),Excellentcurrentgaincharacteristics;complementarypairwith2SC4115. Applications LowFrequencyAmplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | |||
TRANSISTOR DESCRIPTION PNPEpitaxialplanartypeSiliconTransistor FEATURES LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) APPLICATION Excellentcurrentgaincharacteristics Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,NotebookPC,etc.) | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
LowVce(sat)Transistor(-20V,-3A) Features 1)LowVCE(sat).VCE(sat)=-0.2V(Typ.)(IC/IB=-2A/-0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. | ROHMRohm 罗姆罗姆半导体集团 | |||
PNPPlastic-EncapsulateTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Powerdissipation:PD=0.4W(Tamb=25°C) •Colle | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PD:0.4W(Tamb=25℃) Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
TO-92SPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●LowVCE(sat). ●ExcellentDCcurrentgaincharacteristics. ●Powerdissipation | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
LowVCE(sat)Transistor(??0V,??A) Features 1)LowVCE(sat). VCE(sat)=−0.2V(Typ.) (IC/IB=−2A/−0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm 罗姆罗姆半导体集团 | |||
TRANSISTOR(PNP) FEATURES Powerdissipation PD:0.4W(Tamb=25℃) Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | |||
PNPPlastic-EncapsulateTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Powerdissipation:PD=0.4W(Tamb=25°C) •Colle | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPPlastic-EncapsulateTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Powerdissipation:PD=0.4W(Tamb=25°C) •Colle | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPSiliconEpitaxialPlanarTransistor FEATURES ●Highvoltageandhighcurrent. ●ExcellentHFELinearity. ●HighhFElinearity. ●Complementaryto2SC4116. APPLICATIONS ●Audiofrequencygeneralpurposeamplifierapplications. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage APPLICATIONS ●GeneralPurposeAmplification. | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
PNPSiliconPlasticEncapsulatedTransistor FEATURES HighDCCurrentGain HighVoltageandHighCurrent Complementaryto2SC4116 SmallPackage APPLICATIONS GeneralPurposeAmplification | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SiliconPNPEpitaxial ■Features ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),10dB(max) •Complementary | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SOT-323Plastic-EncapsulateTransistors FEATURES HighDCCurrentGain HighVoltageandHighCurrent. Complementaryto2SC4116 SmallPackage APPLICATIONS GeneralPurposeAmplification. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighVoltageandHighCurrent. ●Complementaryto2SC4116 ●SmallPackage APPLICATIONS ●GeneralPurposeAmplification. | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),10dB(max) •Complementary | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),10dB(max) •Complementary | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PNPSiliconEpitaxialPlanarTransistor FEATURES Highvoltageandhighcurrent. ExcellentHFELinearity. HighhFElinearity. Complementaryto2SC4116. APPLICATIONS Audiofrequencygeneralpurposeamplifierapplications. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
SiliconPNPEpitaxial ■Features ●Highvoltage ●Lownoise ●Complementaryto2SC4117 ●SmallPackage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200to700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC4117 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
TRANSISTOR(AUDIOFREQUENCYLOWPOWERAMPLIFIER,DRIVERSTAGEAMPLIFIER,SWITCHINGAPPLICATIONS AudioFrequencyLowPowerAmplifierApplications DriverStageAmplifierApplications SwitchingApplications •ExcellenthFElinearity:hFE(2)=25(min)atVCE=−6V,IC=−400mA •Complementaryto2SC4118 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPEpitaxial ■Features ●ExcellenthFElinearity:hFE(2)=25(min) atVCE=−6V,IC=−400mA ●Complementaryto2SC4118 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPEpitaxialPlanarSiliconTransistor 文件:38.95 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:599.07 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:599.07 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:599.07 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:599.07 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
TRANSISTORSTO92LTO-92LSMRT 文件:195.39 Kbytes Page:2 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
1.2WPACKAGEPOWERTAPEDTRANSISTORDESIGNEDFORUSEWITHANAUTOMATICPLACEMENTMECHINE 文件:88.13 Kbytes Page:2 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
LowVCE(sat)Transistor(−20V,−3A) 文件:91.27 Kbytes Page:4 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
PNPPlastic-EncapsulateTransistors 文件:416.62 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPPlastic-EncapsulateTransistor 文件:314.38 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPPlastic-EncapsulateTransistors 文件:416.62 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPPlastic-EncapsulateTransistors 文件:416.62 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
封装/外壳:TO-226-3,TO-92-3 短体 包装:散装 描述:TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPPlastic-EncapsulateTransistors 文件:416.62 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
封装/外壳:TO-226-3,TO-92-3 短体(成形引线) 包装:散装 描述:TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPSiliconEpitaxialPlanarTransistor 文件:234.84 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
AudioFrequencyGeneralPurposeAmplifierApplications 文件:382.21 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications 文件:382.21 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PNPSiliconPlasticEncapsulatedTransistor 文件:83.35 Kbytes Page:1 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
PNPTransistors 文件:1.16178 Mbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPSiliconEpitaxialPlanarTransistor 文件:234.84 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
PNPTransistors 文件:1.16178 Mbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.16178 Mbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.16178 Mbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
AudioFrequencyGeneralPurposeAmplifierApplications 文件:629.16 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
AudioFrequencyGeneralPurposeAmplifierApplications 文件:629.16 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PNPTransistors 文件:1.63515 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |
2SA158产品属性
- 类型
描述
- 型号
2SA158
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY SANYO TRANSISTOR SPA-50V -.1A .3W ECB
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MSV/萌盛微 |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
Toshiba |
18+ |
N/A |
30000 |
公司只有原装正品 |
|||
TOSHIBA/东芝 |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA/东芝 |
1948+ |
SOT-323 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
SOT-323 |
08+ |
TOSHIBA |
1766 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA |
24+/25+ |
3000 |
原装正品现货库存价优 |
||||
TOSHIBA |
24+ |
SOT-323 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
TOSHIBA/东芝 |
25+ |
SOT-323 |
65428 |
百分百原装现货 实单必成 |
|||
TOSHIBA(东芝) |
23+ |
SOT-323 |
3030 |
三极管/MOS管/晶体管 > 三极管(BJT) |
|||
tosh |
23+ |
NA |
6846 |
专做原装正品,假一罚百! |
2SA158规格书下载地址
2SA158参数引脚图相关
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- 2SA1595
- 2SA1594
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- 2SA1592
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- 2SA1589
- 2SA1588
- 2SA1587
- 2SA1586
- 2SA1585(S)
- 2SA1585
- 2SA1584
- 2SA1583
- 2SA1582
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- 2SA1577
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- 2SA157
- 2SA1568
- 2SA1567
- 2SA1566
- 2SA1565
- 2SA1564
- 2SA1563
- 2SA1562
- 2SA1561
- 2SA1560
- 2SA156
- 2SA1553
- 2SA1552
- 2SA1547
- 2SA1546
- 2SA1544
- 2SA1541
- 2SA1540
- 2SA1539
2SA158数据表相关新闻
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DdatasheetPDF页码索引
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