SOT-23 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Excellent DC current gain characteristics. Power dissipation

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Low VCE(sat) ● Excellent DC current gain characteristics. Power dissipation

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Low VCE(sat),Excellent current gain characteristics; complementary pair with 2SC4115. Applications Low Frequency Amplifier.

晶体管

TRANSISTOR

DESCRIPTION PNP Epitaxial planar type Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

PNP Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Power dissipation: PD = 0.4W(Tamb=25°C) • Colle

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEA TURES ● Low VCE(sat). ● Excellent DC current gain characteristics. ● Power dissipation

Low Vce(sat) Transistor (-20V, -3A)

Features 1) Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (PNP)

FEATURES Power dissipation PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Power dissipation: PD = 0.4W(Tamb=25°C) • Colle

PNP Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Power dissipation: PD = 0.4W(Tamb=25°C) • Colle

Low VCE(sat) Transistor (−20V, −3A)

文件：91.27 Kbytes Page：4 Pages

PNP Plastic-Encapsulate Transistors

文件：416.62 Kbytes Page：2 Pages

PNP Plastic-Encapsulate Transistor

文件：314.38 Kbytes Page：2 Pages

PNP Plastic-Encapsulate Transistors

文件：416.62 Kbytes Page：2 Pages

PNP Plastic-Encapsulate Transistors

文件：416.62 Kbytes Page：2 Pages

中等功率双极型晶体管

封装/外壳：TO-226-3，TO-92-3 短体 包装：散装 描述：TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Plastic-Encapsulate Transistors

文件：416.62 Kbytes Page：2 Pages

中等功率双极型晶体管

封装/外壳：TO-226-3，TO-92-3 短体（成形引线） 包装：散装 描述：TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个