丝印代码：A1585S；Low Vce(sat) Transistor (-20V, -3A)

Features 1) Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S.

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

TO-92S Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEA TURES ● Low VCE(sat). ● Excellent DC current gain characteristics. ● Power dissipation

PNP Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Power dissipation: PD = 0.4W(Tamb=25°C) • Colle

TRANSISTOR (PNP)

FEATURES Power dissipation PD : 0.4W (Tamb=25℃) Collector current I CM : -2A Collector-base voltage V(BR)CBO : -20V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Plastic-Encapsulate Transistor

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PNP Plastic-Encapsulate Transistors

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丝印代码：A1585S；Low VCE(sat) Transistor (−20V, −3A)

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晶体管

PNP Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Power dissipation: PD = 0.4W(Tamb=25°C) • Colle

PNP Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Power dissipation: PD = 0.4W(Tamb=25°C) • Colle

PNP Plastic-Encapsulate Transistors

文件：416.62 Kbytes Page：2 Pages

PNP Plastic-Encapsulate Transistors

文件：416.62 Kbytes Page：2 Pages

中等功率双极型晶体管

封装/外壳：TO-226-3，TO-92-3 短体 包装：散装 描述：TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Plastic-Encapsulate Transistors

文件：416.62 Kbytes Page：2 Pages

中等功率双极型晶体管

封装/外壳：TO-226-3，TO-92-3 短体（成形引线） 包装：散装 描述：TRANS PNP 20V 2A TO92S 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANSISTOR

DESCRIPTION PNP Epitaxial planar type Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = -0.2V (Typ.)(IC/IB =-2A/-0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into two groups, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.